Sintered product having a relative density of greater than 90%, with, to more than 80% of the volume thereof, a stack of flat ceramic platelets, the assembly of the platelets having a mean thickness of less than 3 μm, having a width of greater than 50 mm, and including more than 20% of alumina, as a percentage on the basis of the weight of the product. The width of the product is the largest dimension measured in the plane in which the length of the product is measured, along a direction perpendicular to the direction of the length. The length of the product is the largest dimension thereof in a plane parallel to the general plane in which the platelets extend.

A cutting tool (1) formed of a silicon nitride-based sintered body (2) including a matrix phase (3), a hard phase (4), and a grain boundary phase (10) in which a glass phase (11) and a crystal phase (12) exist. The sintered body (2) contains yttrium in an amount of 5.0 wt % to 15.0 wt % in terms of an oxide, and contains titanium nitride as the hard phase (4) in an amount of 5.0 wt % to 25.0 wt %. In an X-ray diffraction peak, a halo pattern appears at 2θ ranging from 25° to 35° in an internal region of the sintered body (2). A ratio B/A of a maximum peak intensity B to a maximum peak intensity A satisfies 0.11≤B/A≤0.40 . . . Expression (1) in a surface region of the sintered body (2), and satisfies 0.00≤B/A≤0.10 . . . Expression (2) in the internal region of the sintered body (2).

A method of producing polycrystalline Y.sub.3Ba.sub.5Cu.sub.8O.sub.y (Y-358) whereby powders of yttrium (III) oxide, a barium (II) salt, and copper (II) oxide are pelletized, calcined at 850 to 950° C. for 8 to 16 hours, ball milled under controlled conditions, pelletized again and sintered in an oxygen atmosphere at 900 to 1000° C. for up to 72 hours. The polycrystalline Y.sub.3Ba.sub.5Cu.sub.8O.sub.y thus produced is in the form of elongated crystals having an average length of 2 to 10 μm and an average width of 1 to 2 μm, and embedded with spherical nanoparticles of yttrium deficient Y.sub.3Ba.sub.5Cu.sub.8O.sub.y having an average diameter of 5 to 20 nm. The spherical nanoparticles are present as agglomerates having flower-like morphology with an average particles size of 30 to 60 nm. The ball milled polycrystalline Y.sub.3Ba.sub.5Cu.sub.8O.sub.y prepared under controlled conditions shows significant enhancement of superconducting and flux pinning properties.

A copper-ceramic composite: includes a ceramic substrate containing alumina and a copper or copper alloy coating on the ceramic substrate. The alumina has a mean grain shape factor R.sub.a(Al.sub.2O.sub.3), defined as the arithmetic mean of the shape factors R of the alumina grains, of at least 0.4.

The invention relates to a copper-ceramic composite, comprising a ceramic substrate, which contains aluminum oxide, a coating on the ceramic substrate made of copper or a copper alloy, wherein the aluminum oxide has an average grain form factor R.sub.a(Al.sub.2O.sub.3), determined as an arithmetic average value from the form factors of the grains of the aluminum oxide, the copper or the copper alloy has an average grain form factor R.sub.a(Cu), determined as an arithmetic average of the form factors of the grains of the copper or copper alloy, and the average grain form factors of the aluminum oxide and copper or copper alloy meet the following condition: 0.5≤R.sub.a(Al.sub.2O.sub.3)/R.sub.a(Cu)≤2.0.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

A method of producing polycrystalline Y.sub.3Ba.sub.5Cu.sub.8O.sub.y (Y-358) whereby powders of yttrium (III) oxide, a barium (II) salt, and copper (II) oxide are pelletized, calcined at 850 to 950° C. for 8 to 16 hours, ball milled under controlled conditions, pelletized again and sintered in an oxygen atmosphere at 900 to 1000° C. for up to 72 hours. The polycrystalline Y.sub.3Ba.sub.5Cu.sub.8O.sub.y thus produced is in the form of elongated crystals having an average length of 2 to 10 μm and an average width of 1 to 2 μm, and embedded with spherical nanoparticles of yttrium deficient Y.sub.3Ba.sub.5Cu.sub.8O.sub.y having an average diameter of 5 to 20 nm. The spherical nanoparticles are present as agglomerates having flower-like morphology with an average particles size of 30 to 60 nm. The ball milled polycrystalline Y.sub.3Ba.sub.5Cu.sub.8O.sub.y prepared under controlled conditions shows significant enhancement of superconducting and flux pinning properties.

A silicon nitride sintered body includes a silicon nitride crystal grains and grain boundary phases. Further, when D stands for width of the silicon nitride sintered body before being subjected to surface processing, relations between an average grain diameter dA and an average aspect ratio rA of the silicon nitride crystal grain in a first region from an outermost surface to a depth of 0 to 0.01D and an average grain diameter dB and an average aspect ratio rB of the silicon nitride crystal grain in a second region inside the first region satisfy the inequalities:

0.8≤ dA/dB≤ 1.2; and

0.8≤ rA/rB≤ 1.2.

A sintered bead with the following crystal phases, in percentages by mass based on crystal phases: 25%≤zircon, or “Z.sub.1”, ≤94%; 4%≤stabilized zirconia+stabilized hafnia, or “Z.sub.2”, ≤61%; monoclinic zirconia+monoclinic hafnia, or “Z.sub.3”≤50%; corundum≤57%; crystal phases other than Z.sub.1, Z.sub.2, Z.sub.3 and corundum<10%; the following chemical composition, in percentages by mass based on oxides: 33%≤ZrO.sub.2+HfO.sub.2, or “Z.sub.4”≤83.4%; HfO.sub.2≤2%; 10.6%≤SiO.sub.2≤34.7%; Al.sub.2O.sub.3≤50%; 0%≤Y.sub.2O.sub.3, or “Z.sub.5”; 0%≤CeO.sub.2, or “Z.sub.6”; 0.3%≤CeO.sub.2+Y.sub.2O.sub.3≤19%, provided that (1) CeO.sub.2+3.76*Y.sub.2O.sub.3≥0.128*Z, and (2) CeO.sub.2+1.3*Y.sub.2O.sub.3≤0.318*Z, with Z=Z.sub.4+Z.sub.5+Z.sub.6−(0.67*Z.sub.1*(Z.sub.4+Z.sub.5+Z.sub.6)/(0.67*Z.sub.1+Z.sub.2+Z.sub.3)); MgO≤5%; CaO≤2%; oxides other than ZrO.sub.2, HfO.sub.2, SiO.sub.2, Al.sub.2O.sub.3, MgO, CaO, CeO.sub.2 and Y.sub.2O.sub.3<5.0%.