C04B2237/121

Dense composite material, method for producing the same, joined body, and member for semiconductor manufacturing device

According to the present invention, a dense composite material includes titanium silicide in an amount of 43 to 63 mass %; silicon carbide in an amount less than the mass percentage of the titanium silicide; and titanium carbide in an amount less than the mass percentage of the titanium silicide. In the dense composite material, a maximum value of interparticle distances of the silicon carbide is 40 μm or less, a standard deviation of the interparticle distances is 10 or less, and an open porosity of the dense composite material is 1% or less.

Method of Joining Metal-Ceramic Substrates to Metal Bodies
20180002239 · 2018-01-04 ·

A method of joining a metal-ceramic substrate having metalization on at least one side to a metal body by using a metal alloy is disclosed. The metal body has a thickness of less than 1.0 mm, and the metal alloy contains aluminum and has a liquidus temperature of greater than 450° C. The resulting metal-ceramic module provides a strong bond between the metal body and the ceramic substrate. The resulting module is useful as a circuit carrier in electronic appliances, with the metal body preferably functioning as a cooling body.

Semiconductor substrate support with multiple electrodes and method for making same

A method for manufacturing an electrostatic chuck with multiple chucking electrodes made of ceramic pieces using metallic aluminum as the joining. The aluminum may be placed between two pieces and the assembly may be heated in the range of 770 C to 1200 C. The joining atmosphere may be non-oxygenated. After joining the exclusions in the electrode pattern may be machined by also machining through one of the plate layers. The machined exclusion slots may then be filled with epoxy or other material. An electrostatic chuck or other structure manufactured according to such methods.

Sintered body, substrate, circuit board, and manufacturing method of sintered body

A sintered body includes a crystal grain containing silicon nitride, and a grain boundary phase. If dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value ε.sub.A of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value ε.sub.B of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |ε.sub.A−ε.sub.B|≤0.1.

Method for producing a metal-ceramic substrate with at least one via
11557490 · 2023-01-17 · ·

A method for producing a metal-ceramic substrate with electrically conductive vias includes: attaching a first metal layer in a planar manner to a first surface side of a ceramic layer; after attaching the first metal layer, introducing a copper hydroxide or copper acetate brine into holes in the ceramic layer delimiting a via, to form an assembly; converting the copper hydroxide or copper acetate brine into copper oxide; subjecting the assembly to a high-temperature step above 500° C. in which the copper oxide forms a copper body in the holes; and after converting the copper hydroxide or copper acetate brine into the copper oxide, attaching a second metal layer in a planar manner to a second surface side of the ceramic layer opposite the first surface side. The copper body produces an electrically conductive connection between the first and the second metal layers.

Low temperature direct bonding of aluminum nitride to AlSiC substrates

Disclosed herein are power electronic modules formed by directly bonding a heat sink to a dielectric substrate using transition liquid phase bonding.

TEMPERATURE BARRIER COATING FOR RIM-ROTOR
20220381149 · 2022-12-01 ·

A rim-rotor assembly has an annular structure including a composite rim and a hub. Blades project from the hub, tips of the blades contacting the annular structure, the blades configured to be loaded in compression against the annular structure. A thermal barrier is in the annular structure, the thermal barrier defining at least part of a radially inward surface of the annular structure. The tips of the blades contact the thermal barrier, the thermal barrier being a thermal barrier coating.

CERAMIC MATERIAL, POWDER, AND LAYER SYSTEM COMPRISING THE CERAMIC MATERIAL

An improved ceramic material for heat insulation with selection of specific stabilizers and adapted proportions, includes zirconium oxide with 0.2 wt. % to 8.0 wt. % of the base stabilizers: yttrium oxide (Y.sub.2O.sub.3), hafnium oxide (HfO.sub.2), cerium oxide (CeO.sub.2), calcium oxide (CaO), and/or magnesium oxide (MgO), wherein at least yttrium oxide (Y.sub.2O.sub.3) is used, and optionally at least one of the additional stabilizers: 0.2 wt. % to 20 wt. % of erbium oxide (Er.sub.2O.sub.3) and/or ytterbium oxide (Yb.sub.2O.sub.3).

Method for Producing a Metal-Ceramic Substrate with Electrically Conductive Vias
20230095753 · 2023-03-30 ·

A method for producing a metal-ceramic substrate with a plurality of electrically conductive vias includes: attaching a first metal layer in a planar manner to a first surface side of a ceramic layer; after attaching the first metal layer, introducing a copper hydroxide or copper acetate brine into a plurality of holes in the ceramic layer delimiting a via, to form an assembly; converting the copper hydroxide or copper acetate brine into copper oxide; subjecting the assembly to a high-temperature step above 500° C. in which the copper oxide forms a copper body in the plurality of holes; and after converting the copper hydroxide or copper acetate brine into the copper oxide, attaching a second metal layer in a planar manner to a second surface side of the ceramic layer opposite the first surface side. The copper body produces an electrically conductive connection between the first and the second metal layers.

ELECTRIC CIRCUIT BOARD AND POWER MODULE
20220330447 · 2022-10-13 · ·

An electric circuit board includes an insulating substrate, a metal plate, and a brazing material with which the insulating substrate and the metal plate are joined together. The metal plate has a side surface over which recessed portions are scattered. The side surface of the metal plate has lines in regions around the recessed portions. The metal plate is made of copper or a copper alloy. The brazing material has a side surface that is continuous with the side surface of the metal plate. The brazing material is a silver-copper brazing alloy. A ratio of copper on the side surface of the brazing material is higher than a copper component ratio of the silver-copper brazing alloy.