A method for manufacturing a metal-ceramic substrate (1) includes providing a ceramic layer (10), a metal layer (20) and a solder layer (30) coating the ceramic layer (10) and/or the metal layer (20) and/or the solder layer (30) with an active metal layer (40), arranging the solder layer (30) between the ceramic layer (10) and the metal layer (20) along a stacking direction (S), forming a solder system (35) comprising the solder layer and the active metal layer (40), wherein a solder material of the solder layer (30) is free of a melting point lowering material and bonding the metal layer (20) to the ceramic layer (10) via the solder system (35) by means of an active solder process.

A solder material (30) for bonding a metal layer (20) to a ceramic layer (10), in particular for forming a metal-ceramic substrate as a carrier for electrical components, comprising: a base material and an active metal, wherein the solder material (30) is a foil comprising the base material in a first layer (31) and the active metal in a second layer (32), and wherein the foil has a total thickness (GD) which is less than 50 μm, preferably less than 25 μm and particularly preferably less than 15 μm.

The invention relates to a process for producing a metal-ceramic substrate (1), comprising: providing a ceramic element (10) and a metal layer, providing a gas-tight container (25) that encloses the ceramic element (10), the container (25) preferably being formed from the metal layer or comprising the metal layer, forming the metal-ceramic substrate (1) by connecting the metal layer to the ceramic element (10) by means of hot isostatic pressing, wherein, for the purpose of forming the metal-ceramic substrate (1), an active metal layer (15) or a contact layer comprising an active metal is arranged at least in some sections between the metal layer and the ceramic element (10) for supporting the connection of the metal layer to the ceramic element (10).

A ceramic structure includes a base body, and a thermoelectric device having a part in directly contact with the base body. The base body is a ceramic consisting of aluminum oxide. The thermoelectric device comprises a conductor part that is a sintered body having an alloy of tungsten and rhenium, as a main component, and including nickel oxide, aluminum oxide and silicon dioxide.

A wiring board includes an insulating substrate and a wiring conductor. The insulating substrate includes a first layer having an upper surface and a lower surface and having a first content of aluminum oxide and containing mullite and a second layer stacked on the upper surface and/or the lower surface of the first layer and having a second content of aluminum oxide greater than the first content. The wiring conductor is located inside the first layer and contains a manganese compound and/or a molybdenum compound. A manganese silicate phase and/or a magnesium silicate phase in an interface area between the insulating substrate and the wiring conductor.

An aluminum nitride sintered body for use in a semiconductor manufacturing apparatus is provided. The aluminum nitride sintered body exhibits, in a photoluminescence spectrum thereof in a wavelength range of 350 nm to 700 nm obtained with 250 nm excitation light, a highest emission intensity peak within a wavelength range of 580 nm to 620 nm.

A joined material and a method of manufacturing the joined material are provided which enable a metal layer and a carbon material layer to be easily joined to each other while making the thickness of the metal layer larger and which can inhibit failure. A joined material includes a CFC layer (3) and a tungsten layer (4) that are joined to each other. A sintered tungsten carbide layer (5), a mixed layer (6) of SiC and WC, and SiC and WC (7) that have been sintered while intruding into the CFC layer (3), are formed between the CFC layer (3) and the tungsten layer (4), and these layers (3, 4, 5, 6, and 7) are joined to each other by sintering.

A ceramic structure includes a base body, and a thermoelectric device having a part in directly contact with the base body. The base body is a ceramic consisting of aluminum oxide. The thermoelectric device comprises a conductor part that is a sintered body having an alloy of tungsten and rhenium, as a main component, and including nickel oxide, aluminum oxide and silicon dioxide.

A ceramic structural body includes a substrate that is composed of a ceramic(s), a hole that is opened on a surface of the substrate, and a seal material that is positioned at an opening portion of the hole.

A wiring board includes an insulating substrate and a wiring conductor. The insulating substrate includes a first layer having an upper surface and a lower surface and having a first content of aluminum oxide and containing mullite and a second layer stacked on the upper surface and/or the lower surface of the first layer and having a second content of aluminum oxide greater than the first content. The wiring conductor is located inside the first layer and contains a manganese compound and/or a molybdenum compound. A manganese silicate phase and/or a magnesium silicate phase in an interface area between the insulating substrate and the wiring conductor.