A compound of formula (I): ##STR00001## wherein p is at least 1, n is at least 1 and less than or equal to p; Ar is a polycyclic aromatic moiety, R.sup.1 is hydrogen or an optionally substituted hydrocarbyl group and each of R.sup.2, R.sup.3 and R.sup.4 is independently an optionally substituted hydrocarbyl group, provided that at least one of R.sup.2, R.sup.3 and R.sup.4 has at least 6 carbon atoms.

Compounds of general Formula (I)

##STR00001##

wherein the elements A, L, R.sup.1 and R.sup.2 have a defined meaning, and their medical and non-medical use. The compounds may be used treatment of a subject in need of any one or more of anti-inflammatory, anti-oxidative, anti-ageing, or lipid metabolism modulation therapy or prophylaxis. The compounds may also be used as food or feed products, dietary supplements or cosmetic preparations.

A compound of formula (I):

##STR00001##

wherein p is at least 1, n is at least 1 and less than or equal to p; Ar is a polycyclic aromatic moiety, R.sup.1 is hydrogen or an optionally substituted hydrocarbyl group and each of R.sup.2, R.sup.3 and R.sup.4 is independently an optionally substituted hydrocarbyl group, provided that at least one of R.sup.2, R.sup.3 and R.sup.4 has at least 6 carbon atoms.

The present invention relates to a method for preparing a sulfonated graphene from an organic material and to the sulfonated graphene prepared therefrom. The method comprises the following steps: a first contact step: a reaction medium containing oxidative sulfonating agent is allowed to come into contact with the organic macromolecular material at a first temperature; and, a second contact step: when the first contact step is completed, in same reaction medium, the reaction temperature is increased to a second temperature to allow for continued reaction, thus producing the sulfonated graphene.

Provided are ionic thermal acid generators comprising an anion of an aromatic sulfonic acid comprising one or more fluorinated alcohol group and a cation. Also provided are photoresist pattern trimming compositions that include an ionic thermal acid generator, a matrix polymer and a solvent, and methods of trimming a photoresist pattern using the trimming compositions. The thermal acid generators, compositions and methods find particular applicability in the manufacture of semiconductor devices.

The present invention relates to a method for preparing a sulfonated graphene from an organic material and to the sulfonated graphene prepared therefrom. The method comprises the following steps: a first contact step: a reaction medium containing oxidative sulfonating agent is allowed to come into contact with the organic macromolecular material at a first temperature; and, a second contact step: when the first contact step is completed, in same reaction medium, the reaction temperature is increased to a second temperature to allow for continued reaction, thus producing the sulfonated graphene.

Photoresist pattern trimming compositions are provided. The compositions comprise: a matrix polymer, an aromatic sulfonic acid and a solvent, wherein the aromatic sulfonic acid comprises one or more fluorinated alcohol group. Also provided are methods of trimming a photoresist pattern using the trimming compositions. The compositions and methods find particular applicability in the manufacture of semiconductor devices.

Photoresist pattern trimming compositions are provided. The compositions comprise: a matrix polymer, an aromatic sulfonic acid and a solvent, wherein the aromatic sulfonic acid comprises one or more fluorinated alcohol group. Also provided are methods of trimming a photoresist pattern using the trimming compositions. The compositions and methods find particular applicability in the manufacture of semiconductor devices.

Provided are ionic thermal acid generators comprising an anion of an aromatic sulfonic acid comprising one or more fluorinated alcohol group and a cation. Also provided are photoresist pattern trimming compositions that include an ionic thermal acid generator, a matrix polymer and a solvent, and methods of trimming a photoresist pattern using the trimming compositions. The thermal acid generators, compositions and methods find particular applicability in the manufacture of semiconductor devices.