Patent classifications
C07C309/56
Resist composition and patterning process
A resist composition comprising a base polymer and a sulfonium or iodonium salt capable of generating fluorobenzenesulfonic acid bonded to iodized benzoic acid offers a high sensitivity and minimal LWR independent of whether it is of positive or negative tone.
Resist composition and patterning process
A resist composition comprising a base polymer and a sulfonium or iodonium salt capable of generating fluorobenzenesulfonic acid bonded to iodized benzoic acid offers a high sensitivity and minimal LWR independent of whether it is of positive or negative tone.
Resist composition and patterning process
A resist composition comprising a base polymer and a sulfonium or iodonium salt capable of generating sulfonic acid bonded to iodized benzene ring offers a high sensitivity and minimal LWR independent of whether it is of positive or negative tone.
Resist composition and patterning process
A resist composition comprising a base polymer and a sulfonium or iodonium salt capable of generating sulfonic acid bonded to iodized benzene ring offers a high sensitivity and minimal LWR independent of whether it is of positive or negative tone.
RESIST COMPOSITION AND PATTERNING PROCESS
A resist composition comprising a base polymer and a sulfonium or iodonium salt capable of generating fluorobenzenesulfonic acid bonded to iodized benzoic acid offers a high sensitivity and minimal LWR independent of whether it is of positive or negative tone.
RESIST COMPOSITION AND PATTERNING PROCESS
A resist composition comprising a base polymer and a sulfonium or iodonium salt capable of generating sulfonic acid bonded to iodized benzene ring offers a high sensitivity and minimal LWR independent of whether it is of positive or negative tone.