Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS.sub.2, WN.sub.x, WO.sub.3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.

Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS.sub.2, WN.sub.x, WO.sub.3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.

Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS.sub.2, WN.sub.x, WO.sub.3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.

A method for manufacturing tris(β-diketonato)iridium by reacting β-diketone with an iridium compound, in which an activation treatment including (a) an alkali treatment and (b) an acid treatment described below is applied to the iridium compound to activate the iridium compound, and to subsequently react the β-diketone, (a) an alkali treatment: a treatment of adding alkali to a solution of the iridium compound to raise pH of the solution to a more alkaline side than that before the alkali addition and to not less than 10, and (b) an acid treatment: a treatment of adding acid to the solution subjected to the alkali treatment to lower pH of the solution to a more acidic side than that before the acid addition and to make the pH difference between solutions before and after the acid addition be not less than 0.1 and not more than 10. The present invention allows manufacture of tris(β-diketonato)iridium utilizing a wide variety of β-diketones.

The present disclosure provides a method preparing Silver-nanocurcumin material for inhibiting new coronavirus. The turmeric powder is heated and stirred and then mixed with silver nitrate solution. After multiple steps of cooling, stirring for reaction and centrifuging and other steps, crude extract of Silver-nanocurcumin is obtained. Then, after further processes such as the multiple washing and centrifuging, a purified composition of Silver-nanocurcumin is obtained. The composition of Silver-nanocurcumin can be used to inhibit the new coronavirus and its similar viruses, and as a source of drugs for the prevention and treatment of diseases derived from the new coronavirus COVID-19 in the future.

The present disclosure provides a method preparing Silver-nanocurcumin material for inhibiting new coronavirus. The turmeric powder is heated and stirred and then mixed with silver nitrate solution. After multiple steps of cooling, stirring for reaction and centrifuging and other steps, crude extract of Silver-nanocurcumin is obtained. Then, after further processes such as the multiple washing and centrifuging, a purified composition of Silver-nanocurcumin is obtained. The composition of Silver-nanocurcumin can be used to inhibit the new coronavirus and its similar viruses, and as a source of drugs for the prevention and treatment of diseases derived from the new coronavirus COVID-19 in the future.

Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS.sub.2, WN.sub.x, WO.sub.3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.

Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS.sub.2, WN.sub.x, WO.sub.3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.

Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS.sub.2, WN.sub.x, WO.sub.3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.

A process can be used for preparing aldehydes from C2 to C20 olefins with a subsequent thermal separation for removal of the aldehyde formed. The process involves a membrane separation, which is preceded by performance of a gas exchange by which the proportion of the partial pressure represented by carbon monoxide or hydrogen is increased in order to reduce catalyst losses.