The present invention provides an epoxy compound which is 2,2′,7,7′-tetraglycidyloxy-1,1′-binaphthalene. Also, the present invention provides a method for producing [1,1′-binaphthalene]-2,2′,7,7′-tetraol, the method including a step of bringing a crude product produced by dimerization reaction of naphthalene-2,7-diol or a naphthalene-2,7-diol derivative into contact with an aromatic solvent; a step of separating [1,1′-binaphthalene]-2,2′,7,7′-tetraol dissolved in the aromatic solvent from insoluble substances; and a step of removing the solvent from a solution of [1,1′-binaphthalene]-2,2′,7,7′-tetraol. The present invention also provides a method for producing an epoxy compound, the method including reacting [1,1′-binaphthalene]-2,2′,7,7′-tetraol or [1,1′-binaphthalene]-2,2′,7,7′-tetraol monohydrate with epihalohydrin.

The present invention provides an epoxy compound which is 2,2′,7,7′-tetraglycidyloxy-1,1′-binaphthalene. Also, the present invention provides a method for producing [1,1′-binaphthalene]-2,2′,7,7′-tetraol, the method including a step of bringing a crude product produced by dimerization reaction of naphthalene-2,7-diol or a naphthalene-2,7-diol derivative into contact with an aromatic solvent; a step of separating [1,1′-binaphthalene]-2,2′,7,7′-tetraol dissolved in the aromatic solvent from insoluble substances; and a step of removing the solvent from a solution of [1,1′-binaphthalene]-2,2′,7,7′-tetraol. The present invention also provides a method for producing an epoxy compound, the method including reacting [1,1′-binaphthalene]-2,2′,7,7′-tetraol or [1,1′-binaphthalene]-2,2′,7,7′-tetraol monohydrate with epihalohydrin.

The present disclosure relates to the field of epoxide synthesis, and particularly to a safe, environmentally friendly and controllable method for preparing cycloaliphatic diepoxides. The method comprises the steps of: mixing a diene compound, a carboxylic acid, an alkaline salt, and a solvent, and cooling; dropwise adding a hydrogen peroxide solution thereto over 1-12 h; standing for layering to obtain an underlayer of an organic phase 1, washing the organic phase 1 with a washing liquid, and standing for layering to obtain an underlayer of an organic phase 2; and purifying the organic phase 2. The reaction system of the present disclosure is simple, environmentally friendly, safe and controllable, and the production cost is low, which can meet the technical and economic requirements. The obtained cycloaliphatic diepoxides have high purity, high yield, low solvent content, low chroma and low halogen content, which are suitable for large-scale industrial production.

The present invention relates to a hyperbranched polyglycerol polyglycidyl ether having a molecular weight from 750 to 15.000 Da; and an epoxy equivalent weight from 183 to 7.000 g/eq. It also relates to a crosslinked polysaccharide obtainable by crosslinking the polysaccharide with the hyperbranched polyglycerol polyglycidyl ether. The present invention also relates to processes for their preparation and their uses in therapy, cosmetic, agriculture and food field.

The present invention relates to a hyperbranched polyglycerol polyglycidyl ether having a molecular weight from 750 to 15.000 Da; and an epoxy equivalent weight from 183 to 7.000 g/eq. It also relates to a crosslinked polysaccharide obtainable by crosslinking the polysaccharide with the hyperbranched polyglycerol polyglycidyl ether. The present invention also relates to processes for their preparation and their uses in therapy, cosmetic, agriculture and food field.

A bisphenol A derivative, a preparation method therefor and use thereof in photolithography are provided. The compounds feature simple molecular structure, controllable molecular weight, simple synthesis steps, and relatively high thermal stability. They do not precipitate during baking and are not easily denatured during photolithography. The negative molecular glass photoresists have good film-forming property, high thermal stability, less proneness to properties varying during storage, and low viscosity, no need for additional solvents for dilution during use. After exposure at UV wavelength of 365 nm, the exposed pattern shows high contrast, excellent resolution and good sensitivity, and can present the lithographic line width of 3.5 μm.

A bisphenol A derivative, a preparation method therefor and use thereof in photolithography are provided. The compounds feature simple molecular structure, controllable molecular weight, simple synthesis steps, and relatively high thermal stability. They do not precipitate during baking and are not easily denatured during photolithography. The negative molecular glass photoresists have good film-forming property, high thermal stability, less proneness to properties varying during storage, and low viscosity, no need for additional solvents for dilution during use. After exposure at UV wavelength of 365 nm, the exposed pattern shows high contrast, excellent resolution and good sensitivity, and can present the lithographic line width of 3.5 μm.

A composition for protective film formation can form a flat film that satisfactorily functions as a mask (protection) against wet etchants during semiconductor substrate processing and has a low dry etching rate, the composition having satisfactory covering and recess-filling properties when applied to rugged substrates and having a small thickness difference after the recess filling. A protective film, a resist underlayer film, and a resist-pattern-coated substrate each produced using the composition; and a method for producing a semiconductor device. The composition, which is for forming films for protection against wet etchants for semiconductors, includes an organic solvent and a compound that has a molecular end having a structure including at least one pair of adjoining hydroxyl groups and has a molecular weight of 1,500 or less, wherein particles present therein have an average particle diameter, as determined by a dynamic light scattering method, of 3 nm or smaller.

A composition for protective film formation can form a flat film that satisfactorily functions as a mask (protection) against wet etchants during semiconductor substrate processing and has a low dry etching rate, the composition having satisfactory covering and recess-filling properties when applied to rugged substrates and having a small thickness difference after the recess filling. A protective film, a resist underlayer film, and a resist-pattern-coated substrate each produced using the composition; and a method for producing a semiconductor device. The composition, which is for forming films for protection against wet etchants for semiconductors, includes an organic solvent and a compound that has a molecular end having a structure including at least one pair of adjoining hydroxyl groups and has a molecular weight of 1,500 or less, wherein particles present therein have an average particle diameter, as determined by a dynamic light scattering method, of 3 nm or smaller.

Enantiomers of butanediol diglycidyl ether (BDDE) are present in an enantiomerically enriched enantioenriched mixture of BDDE stereisomers or in an enantiomerically pure BDDE. Enantiomerically enriched or pure BDDE is useful as a cross-linking agent, such as in the preparation of a cross-linked hyaluronic acid product.