Disclosed is an adduct between a Lewis acid, preferably aluminum trichloride, iron trichloride, or zinc dichloride, and a hydrosilane;—a method for preparing same; and a method for for reducing, particularly, an aldehyde, a ketone, an α,β-unsaturated ketone, an imine, or an α,β-unsaturated imine.

A new class of compounds known as chalcogenosilacyclopentanes is described. These compounds are five-membered ring structures containing a silicon-selenium or silicon-tellurium bond, as shown in Formulas (I) and (II). In these compounds, the substituents on the silicon and on the ring carbons may be hydrogen, alkyl, alkoxy, aromatic, or ether groups. The chalcogenosilacyclopentane compounds undergo ring-opening reactions with hydroxyl and other protic functionalities and may be used to prepare substrates that are amenable to thin film deposition techniques such as ALD and CVD. ##STR00001##

A hydrocarbyloxydisilane according to formula (1)

Si.sub.2(OR).sub.xH.sub.6-x  (I)

wherein x is 1-5 and R is hydrocarbyl having from 1 to 10 carbon atoms, with the proviso that when x is 1, R is not methyl and when x is 3, formula (1) does not represent 1,1,2-trimethoxydisilane, and a method of making an hydrocarbyloxydisilane, the method comprising: causing the reaction of i) an hydrocarbylaminodisilane, and ii) an alcohol according to formula (II)

R.sup.2OH;  (II)

where R.sup.2 is hydrocarbyl having from 1 to 10 carbon atoms, to form a product mixture comprising the hydrocarbyloxydisilane.

Silicon compounds may be represented by the following formula:

##STR00001##

Each of R.sup.a, R.sup.b, and R.sup.c may be a hydrogen atom, a halogen atom, a C1-C7 alkyl group, an amino group, a C1-C7 alkyl amino group, or a C1-C7 alkoxy group, R.sup.d may be a C1-C7 alkyl group, a C1-C7 alkyl amino group, or a silyl group represented by a formula of *—Si(X.sup.1)(X.sup.2)(X.sup.3). Each of X.sup.1, X.sup.2, and X.sup.3 may be a hydrogen atom, a halogen atom, a C1-C7 alkyl group, an amino group, a C1-C7 alkyl amino group, or a C1-C7 alkoxy group, and * is a bonding site. In some embodiments, when R.sup.b is the C1-C7 alkyl amino group and R.sup.d is the C1-C7 alkyl group, R.sup.b may be connected to R.sup.d to form a ring. To manufacture an integrated circuit (IC) device, a silicon-containing film may be formed on a substrate using the silicon compound of the formula provided above.

Provided is a method for generating hydrogen at a desired rate, using a hydrogen storage material that can be stored and transported safely and inexpensively. The method according to the present invention for producing a silanol compound and hydrogen includes subjecting a hydrosilane compound and water to a reaction with each other in the presence of a solid catalyst to give a silanol compound and hydrogen. The solid catalyst includes hydroxyapatite and gold particles supported on the hydroxyapatite, where the gold particles have an average particle size of 2.5 nm or less. The reaction in the method according to the present invention for producing a silanol compound and hydrogen is preferably performed in an air atmosphere. The reaction in the method according to the present invention for producing a silanol compound and hydrogen can be performed with application of substantially no heat and no activated energy rays.

Described herein are methods for making alkenyl disiloxanes, comprising combining an alkenyl halosilane with a bis-hydrido terminated alkyl disiloxane and adding the mixture to water, an acidic aqueous solution, or a basic aqueous solution. The ratio of the alkenyl halosilane to the bis-hydrido terminated alkyl disiloxane is about 1:10 to about 10:1. The alkenyl halosilane and bis-hydrido terminated alkyl disiloxane are mixed at about 20° C. to about 45° C. In an example, no organic solvent is present. The reaction product is separated and washed with saturated NaHCO.sub.3 solution (e.g., sodium bicarbonate).

In one embodiment, the present application discloses a surface binding compound of the Formula I or Formula II:

##STR00001##

wherein the variables EG, EG1, SP1, SP2, SP3, Ar and BG are as defined herein. In another embodiment, the application discloses a method for forming a coating on a surface of a substrate using the surface binding compound of the Formula I or Formula II.

A new class of compounds known as chalcogenosilacyclopentanes is described. These compounds are five-membered ring structures containing a silicon-selenium or silicon-tellurium bond, as shown in Formulas (I) and (II). In these compounds, the substituents on the silicon and on the ring carbons may be hydrogen, alkyl, alkoxy, aromatic, or ether groups. The chalcogenosilacyclopentane compounds undergo ring-opening reactions with hydroxyl and other protic functionalities and may be used to prepare substrates that are amenable to thin film deposition techniques such as ALD and CVD.

##STR00001##

This disclosure provides a method of preparing a silanol-functional organosilicon compound with a cytochrome P450 variant that facilitates the oxidization of a silyl hydride group to a silanol group in the presence of oxygen. The method includes combining the cytochrome P450 variant and an organosilicon compound having at least one silicon-bonded hydrogen atom to give a reaction mixture and exposing the reaction mixture to oxygen to oxidize the organosilicon compound, thereby preparing the silanol-functional organosilicon compound. Cytochrome P450 variants suitable for use in the method are also disclosed, along with methods for engineering and optimizing the same. Nucleic acids encoding the cytochrome P450 variants and compositions, expression vectors, and host cells including the same are also disclosed.

A branched organosilanol compound and method for its preparation are provided. The branched organosilanol compound may be used as a starting material in a method for preparing a functionalized polymer.