There is provided herein a process for the synthesis of sulfonyl silanes. There is also provided herein various sulfenylated and sulfonylated silicon-containing compounds made by the process.

Thio(di)silanes comprising a thiosilane of formula (A): (R.sup.1aR.sup.1bR.sup.1cCS).sub.s(Si)X.sub.xH.sub.h (A) wherein subscript s is from 2 to 4 or a thiodisilane of formula (I): (R.sup.1aR.sup.1bR.sup.1cCS).sub.s(R.sup.2.sub.2N)(Si—Si)X.sub.xH.sub.h (I) wherein subscript s is from 1 to 6, and wherein R.sup.1a, R.sup.1b, R.sup.1c, R.sup.2, X and subscripts n, x and h are defined herein. Also compositions comprising same, methods of making and using same, intermediates useful in synthesis of same, films and materials prepared therefrom.

A method of forming a film on a substrate is disclosed. The method comprises: heating a thiodisilane according to formula (I) (R.sup.1aR.sup.1bR.sup.1cCS).sub.s(R.sup.2.sub.2N).sub.n(Si—Si)X.sub.xH.sub.h (I) in a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process under thermal or plasma conditions to give a silicon-containing film disposed on the substrate, wherein: subscript s, n, x, h and R.sup.1a, R.sup.1b, R.sup.1c, R.sup.2.sub.2, and X are as described herein.

Chalcogen silane precursors are described. Methods for depositing a silicon nitride (Si.sub.xN.sub.y) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (Si.sub.xN.sub.y) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).

Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I): ##STR00001##
in which R is a substituted or unsubstituted organic group and R′ is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.

Chalcogen silane precursors are described. Methods for depositing a silicon nitride (Si.sub.xN.sub.y) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (Si.sub.xN.sub.y) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).

Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I): ##STR00001##
in which R is a substituted or unsubstituted organic group and R′ is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.

Chalcogen silane precursors are described. Methods for depositing a silicon nitride (Si.sub.xN.sub.y) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (Si.sub.xN.sub.y) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).

The present invention relates to compounds containing fused dibenzo more-than-six-membered heterocycles or azaheterocycles. These compounds may be useful as host materials for phosphorescent electroluminescent devices.

The invention concerns a highly efficient molecular white-light emitter. The invention describes amorphous materials that emit a broadband spectrum of light upon irradiation with an infrared laser. Inorganic nanocrystals form the core of the material and are coated with organic ligands on the surface.