An object of the present invention is to provide a pattern forming method using a non-chemically amplified resist composition, which has excellent washing properties in a washing step with an EBR liquid and is less likely to cause a film loss in a non-exposed portion during development using an organic solvent-based developer.

Another object of the present invention to provide a method for manufacturing an electronic device using the pattern forming method.

The pattern forming method of the present invention includes a resist film forming step of forming a resist film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition, a washing step of washing an outer peripheral portion of the substrate with a washing solution including an organic solvent while rotating the substrate on which the resist film is formed, an exposing step of exposing the resist film, a developing step of positively developing the exposed resist film using an organic solvent-based developer, in which the actinic ray-sensitive or radiation-sensitive resin composition includes a resin having a polar group, a compound including an ion pair which is decomposed by an irradiation with an actinic ray or a radiation, and a solvent, and all of expressions (1) to (4) are satisfied.

A photoresist underlayer composition, comprising a first material comprising two or more hydroxy groups; a second material comprising two or more glycidyl groups; an additive, wherein the additive comprises a compound of Formula (5), a compound of Formula (6), or a combination thereof; and a solvent, wherein the structures of Formula (5) and (6) are as disclosed herein.

Provided are an actinic ray-sensitive or radiation-sensitive resin composition including a compound (A) whose dissolution rate in an alkali developer decreases by the action of an acid, a resin (B) having a group that decomposes by the action of an alkali developer to increase the solubility in the alkali developer and having at least one of a fluorine atom or a silicon atom, and a resin (C) having a phenolic hydroxyl group, different from the resin (B), an actinic ray-sensitive or radiation-sensitive film and a mask blank, each formed using the actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method using the actinic ray-sensitive or radiation-sensitive resin composition, and a method for manufacturing an electronic device.

Disclosed are photosensitive resin compositions capable of forming positive resin films with excellent heat shape retention. The photosensitive resin compositions comprises a polymer having a monomer unit represented by the following general formula (I) and a polyamideimide: ##STR00001##
where R.sup.1 is a single chemical bond or a divalent C1-C6 hydrocarbon group which may have a substituent, and R.sup.2 is a hydrogen or a monovalent C1-C6 hydrocarbon group which may have a substituent.

A polymer comprising: a first repeating unit comprising a tertiary ester acid labile group; and a second repeating unit of Formula (1):

##STR00001## wherein R.sup.1 to R.sup.5 are as provided herein; R.sup.2 and R.sup.3 together do not form a ring; each A is independently a halogen, a carboxylic acid or ester, a thiol, a straight chain or branched C.sub.1-20 alkyl, a monocyclic or polycyclic C.sub.3-20 cycloalkyl, a monocyclic or polycyclic C.sub.3-20 fluorocycloalkenyl, a monocyclic or polycyclic C.sub.3-20 heterocycloalkyl, a monocyclic or polycyclic C.sub.6-20 aryl, or a monocyclic or polycyclic C.sub.4-20 heteroaryl, each of which is substituted or unsubstituted; and m is an integer of 0 to 4.

A polymer comprising: a first repeating unit comprising a tertiary ester acid labile group; and a second repeating unit of Formula (1):

##STR00001## wherein R.sup.1 to R.sup.5 are as provided herein; R.sup.2 and R.sup.3 together do not form a ring; each A is independently a halogen, a carboxylic acid or ester, a thiol, a straight chain or branched C.sub.1-20 alkyl, a monocyclic or polycyclic C.sub.3-20 cycloalkyl, a monocyclic or polycyclic C.sub.3-20 fluorocycloalkenyl, a monocyclic or polycyclic C.sub.3-20 heterocycloalkyl, a monocyclic or polycyclic C.sub.6-20 aryl, or a monocyclic or polycyclic C.sub.4-20 heteroaryl, each of which is substituted or unsubstituted; and m is an integer of 0 to 4.

A resist underlayer composition including a polyarylene ether, an additive polymer that is different from the polyarylene ether, and a solvent, wherein the additive polymer includes an aromatic or heteroaromatic group having at least one protected or free functional group selected from hydroxy, thiol, and amino.

Disclosed is a resist composition including a novolak resin in which a hydroxy group is substituted with a group represented by formula (3), an acid generator, a quencher, and a solvent:

##STR00001##

wherein, in formula (3), R.sup.a10 represents a hydrocarbon group having 1 to 20 carbon atoms (e.g., a chain hydrocarbon group such as an alkyl group, an alkenyl group and an alkynyl group, an alicyclic hydrocarbon group, an aromatic hydrocarbon group, groups formed by combining these groups, etc.) and * represents a bond.

Disclosed is a resist composition including a novolak resin in which a hydroxy group is substituted with a group represented by formula (3), an acid generator, a quencher, and a solvent:

##STR00001##

wherein, in formula (3), R.sup.a10 represents a hydrocarbon group having 1 to 20 carbon atoms (e.g., a chain hydrocarbon group such as an alkyl group, an alkenyl group and an alkynyl group, an alicyclic hydrocarbon group, an aromatic hydrocarbon group, groups formed by combining these groups, etc.) and * represents a bond.

The present invention relates to a polymer of formula (I), wherein R.sub.a-R.sub.d, R.sub.a0-R.sub.d0, R.sub.a1-R.sub.d1, R.sub.a2-R.sub.d2, n, n.sub.0, n.sub.1 and n.sub.2 are as defined in the specification. When used as a film-forming resin for a photoresist, the polymer has such advantages as good ultraviolet light transmittance, high viscosity to form a thick film, fast photospeed, and high resolution. The present invention further relates to a process for the preparation of a polymer of formula (I), a use of a polymer of formula (I) as a film-forming resin in a photoresist, and a photoresist comprising a polymer of formula (I) as a film-forming resin.

##STR00001##