A water-resistant film layer, a preparation method therefor, and a product. The water-resistant film layer is formed on a surface of a substrate by one or more compounds shown in general formula (I) by means of a plasma chemical vapor deposition method, i.e., R.sub.1R.sub.2═R.sub.3R.sub.4(I), wherein R.sub.1 and R.sub.2 are each independently selected from one of a group consisting of hydrogen, alkyl, halogen, haloalkyl, and aryl, at least one of R.sub.1, R.sub.2, and R.sub.3 is halogen, and R.sub.4 is a hydrophobic functional group, typically having a fluorine-containing alky structure.

##STR00001##

A water-resistant film layer, a preparation method therefor, and a product. The water-resistant film layer is formed on a surface of a substrate by one or more compounds shown in general formula (I) by means of a plasma chemical vapor deposition method, i.e., R.sub.1R.sub.2═R.sub.3R.sub.4(I), wherein R.sub.1 and R.sub.2 are each independently selected from one of a group consisting of hydrogen, alkyl, halogen, haloalkyl, and aryl, at least one of R.sub.1, R.sub.2, and R.sub.3 is halogen, and R.sub.4 is a hydrophobic functional group, typically having a fluorine-containing alky structure.

##STR00001##

An actinic ray-sensitive or radiation-sensitive resin composition contains a resin (C) having a repeating unit represented by Formula (1). A pattern forming method includes a step of forming a film with the actinic ray-sensitive or radiation-sensitive resin composition, and a method of manufacturing an electronic device includes the pattern forming method, ##STR00001## in Formula (1), Z represents a halogen atom, a group represented by R.sub.11OCH.sub.2—, or a group represented by R.sub.12OC(═O)CH.sub.2—. R.sub.11 and R.sub.12 each represent a monovalent substituent. X represents an oxygen atom or a sulfur atom. L represents a (n+1)-valent linking group. R represents a group having a group that is decomposed due to the action of an alkali developer to increase solubility in an alkali developer, n represents a positive integer.

An actinic ray-sensitive or radiation-sensitive resin composition contains a resin (C) having a repeating unit represented by Formula (1). A pattern forming method includes a step of forming a film with the actinic ray-sensitive or radiation-sensitive resin composition, and a method of manufacturing an electronic device includes the pattern forming method, ##STR00001## in Formula (1), Z represents a halogen atom, a group represented by R.sub.11OCH.sub.2—, or a group represented by R.sub.12OC(═O)CH.sub.2—. R.sub.11 and R.sub.12 each represent a monovalent substituent. X represents an oxygen atom or a sulfur atom. L represents a (n+1)-valent linking group. R represents a group having a group that is decomposed due to the action of an alkali developer to increase solubility in an alkali developer, n represents a positive integer.

The present invention is directed to a purification method for purifying a fluorine-containing polymerizable monomer of the formula (1), in which the fluorine-containing polymerizable monomer is purified by distillation in the coexistence of a phenolic compound A such as 6-tert-butyl-2,4-xylenol and a phenolic compound B such as 2,2′-methylene-bis(4-methyl-6-tert-butylphenol). ##STR00001##
By the combined use of the phenolic compound A and the phenolic compound B, it is possible to significantly suppress polymerization or oligomerization of the fluorine-containing polymerizable monomer even during industrial-production-scale distillation and efficiently purify the fluorine-containing polymerizable monomer by distillation.

The present invention is directed to a purification method for purifying a fluorine-containing polymerizable monomer of the formula (1), in which the fluorine-containing polymerizable monomer is purified by distillation in the coexistence of a phenolic compound A such as 6-tert-butyl-2,4-xylenol and a phenolic compound B such as 2,2′-methylene-bis(4-methyl-6-tert-butylphenol). ##STR00001##
By the combined use of the phenolic compound A and the phenolic compound B, it is possible to significantly suppress polymerization or oligomerization of the fluorine-containing polymerizable monomer even during industrial-production-scale distillation and efficiently purify the fluorine-containing polymerizable monomer by distillation.

The present invention relates to a technology of solving an issue where screens are contaminated with pollution caused by fingerprints, cosmetics, etc. on covers or windows of mobile devices such as smartphones, tablets, etc. and other user contact devices, thereby maintaining the excellent surface hardness properties of existing covers or windows and preventing deterioration of surface properties (antifouling properties) even when used long-term. The method for forming a surface having super water-repellent and super oil-repellent properties comprises the steps of: etching a surface of a target on which a surface with super water-repellent and super oil-repellent properties will be formed, to thereby form a surface structure in which convex parts () and concave parts () are continuously formed; and performing a conformal coating for coating a fluorine-based material on the surface structure which is etched on the surface of the target, wherein all configuration walls of the convex parts and all configuration walls of the concave parts are coated at a uniform thickness.

Chain scission resist compositions suitable for EUV lithography applications may include monomer functional groups that improve the kinetics and/or thermodynamics of the scission mechanism. Chain scission resists may include monomer functional groups that reduce the risk that leaving groups generated through the scission mechanism may chemically corrode processing equipment.

Chain scission resist compositions suitable for EUV lithography applications may include monomer functional groups that improve the kinetics and/or thermodynamics of the scission mechanism. Chain scission resists may include monomer functional groups that reduce the risk that leaving groups generated through the scission mechanism may chemically corrode processing equipment.

A salt having a group represented by the formula (aa):

##STR00001##

wherein X.sup.a and X.sup.b independently each represent an oxygen atom or a sulfur atom,
the ring W represents a C3-C36 heterocyclic ring which has an ester bond or a thioester bond, said heterocyclic ring optionally further having an oxygen atom, a sulfur atom, a carbonyl group or a sulfonyl group each by which a methylene group has been replaced, and said heterocycilic ring optionally having a hydroxyl group, a cyano group, a carboxyl group, a C1-C12 alkyl group, a C1-C12 alkoxy group, a C2-C13 alkoxycarbonyl group, a C2-C13 acyl group, a C2-C13 acyloxy group, a C3-C12 alicyclic hydrocarbon group, a C6-C10 aromatic hydrocarbon group or any combination of these groups each by which a hydrogen atom has been replaced, and
* represents a binding position.