C08F212/14

RESIST MATERIAL AND PATTERNING PROCESS
20230050585 · 2023-02-16 · ·

The present invention is a resist material containing a base polymer and an acid generator, where the resist material contains, as the acid generator, a sulfonium salt or iodonium salt of a sulfonic acid bonded to a maleimide group. In a chemically amplified resist material in which an acid is used as a catalyst, it is desired to develop an acid generator that makes it possible to reduce LWR of line patterns and critical dimension uniformity (CDU) of hole patterns, and to improve sensitivity. For this purpose, it is necessary to reduce image blurs due to acid diffusion considerably. An object of the present invention is to provide: a resist material having high sensitivity and low CDU in both a positive resist material and a negative resist material; and a patterning process using the same.

Macromolecular compositions for binding small molecules

The present invention relates to a method for preparing a macromolecular composition comprising phenylglyoxaldehyde-derivatives. The invention also relates to the macromolecular compositions per se, and to methods of using the macromolecular compositions. The macromolecular compositions are useful for undergoing subsequent reactions with small molecules, for instance to remove such small molecules from a solution.

COMPOSITION, METHOD OF FORMING RESIST UNDERLAYER FILM, AND METHOD OF FORMING RESIST PATTERN

A composition includes: a compound including an aromatic ring; and a first polymer including a first structural unit represented by formula (1) and a second structural unit represented by formula (2). A content of the first polymer with respect to 100 parts by mass of the compound is no less than 0.1 parts by mass and no greater than 200 parts by mass. R.sup.1 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group; and R.sup.2 represents a substituted or unsubstituted monovalent hydrocarbon group. R.sup.3 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group; L represents a single bond or a divalent linking group; Ar represents a group obtained by removing (n+1) hydrogen atoms from a substituted or unsubstituted aromatic ring; R.sup.4 represents a hydroxy group or a monovalent hydroxyalkyl group; and n is an integer of 1 to 8.

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Resist composition and pattern forming process

A resist composition comprising a base polymer and an acid generator containing a sulfonium salt having the formula (1) or an iodonium salt having the formula (2). ##STR00001##

Positive resist composition and pattern forming process

A positive resist composition comprising a base polymer comprising recurring units having a carboxyl group whose hydrogen is substituted by a pyridine ring-containing tertiary hydrocarbyl group.

Radiation-sensitive resin composition, method for forming pattern, and method for producing monomeric compound
11709428 · 2023-07-25 · ·

A radiation-sensitive resin composition includes: a resin containing a structural unit A represented by formula (1); at least one radiation-sensitive acid generator selected from the group consisting of a radiation-sensitive acid generator represented by formula (2-1) and a radiation-sensitive acid generator represented formula (2-2); and a solvent. At least one R.sup.3 is an acid-dissociable group; and R.sup.41 is a hydrogen atom or a protective group to be deprotected by action of an acid. At least one of R.sup.f1 and R.sup.f2 is a fluorine atom or a fluoroalkyl group; R.sup.5a is a monovalent organic group having a cyclic structure; X.sub.1.sup.+ is a monovalent onium cation; R.sup.5b is a monovalent organic group, and X.sub.2.sup.+ is a monovalent onium cation whose atom having a positive charge is not an atom forming a cyclic structure. ##STR00001##

Aqueous inkjet ink compositions made from monodisperse latexes

Aqueous inkjet ink compositions are provided. In an embodiment, such a composition comprises water; resin particles; and a colorant; wherein the resin particles comprise a polymerization product of reactants comprising a monomer, an acidic monomer, a multifunctional monomer, and a reactive surfactant, the resin particles having a D.sub.(z, ave) of no greater than about 150 nm, a D.sub.(v,90) of less than about 200 nm, and a polydispersity index (PDI) of no greater than about 0.050. Methods of forming and using the aqueous inkjet ink compositions are also provided.

Polymers and nanoparticles for flooding

A method and compounds for enhanced oil recovery (EOR) including flooding of a mixture of water and one or more of the compounds in a geological formation. The compounds have a fluoroalkyl group.

RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND

A radiation-sensitive resin composition includes: a polymer, solubility of which in a developer solution is capable of being altered by an action of an acid; a radiation-sensitive acid generator; and a compound represented by formula (1). Ar.sup.1 represents a group obtained by removing (a+b+2) hydrogen atoms from an aromatic hydrocarbon ring having 6 to 30 ring atoms; R.sup.1 represents a halogen atom or a monovalent organic group having 1 to 20 carbon atoms; L.sup.1 represents a divalent linking group; R.sup.2 represents a substituted or unsubstituted monovalent aromatic hydrocarbon group having 6 to 20 carbon atoms; a is an integer of 0 to 10, b is an integer of 1 to 10, wherein a sum of a and b is no greater than 10; and X.sup.+ represents a monovalent radiation-sensitive onium cation.

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Positive resist composition and patterning process
11567406 · 2023-01-31 · ·

A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of an iodized or brominated phenol, and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group exhibits a high sensitivity, high resolution, low edge roughness and dimensional uniformity, and forms a pattern of good profile after exposure and development.