A resist composition comprising an iodized base polymer and an iodized benzene ring-containing quencher has a high sensitivity and improved LWR and CDU.

A resist composition comprising an iodized base polymer and an iodized benzene ring-containing quencher has a high sensitivity and improved LWR and CDU.

An iodized aromatic carboxylic acid type pendant-containing polymer is provided. A resist composition comprising the same offers a high sensitivity and is unsusceptible to nano-bridging, pattern collapse or residue formation, independent of whether it is of positive or negative tone.

An iodized aromatic carboxylic acid type pendant-containing polymer is provided. A resist composition comprising the same offers a high sensitivity and is unsusceptible to nano-bridging, pattern collapse or residue formation, independent of whether it is of positive or negative tone.

An antireflective film including: a support base, and a pattern composed of a photoresist material formed on the support base, the pattern having a larger size at a point closer to the support base. The photoresist material contains a polymer compound having an aromatic group, and the polymer compound includes at least one of: (i) a repeating unit having a cyclopentadienyl complex structure, (ii) a repeating unit having a naphthalene structure, and (iii) a repeating unit having a naphthalene structure and/or a fluorene structure. The repeating units having a naphthalene structure may include one of the following units:

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The disclosed antireflective film shows an antireflection effect to decrease the reflection of light. A method of producing the antireflective film, and an eyeglass type display including the antireflective film are disclosed.

A monomer having formula (A) is provided. R.sup.A is H, methyl or trifluoromethyl, X.sup.1 is a single bond, ether, ester or amide bond, R.sup.a is a C.sub.1-C.sub.20 monovalent hydrocarbon group, R.sup.b is H or an acid labile group, X is halogen, n is an integer of 1 to 4, m is an integer of 0 to 3, and 1n+m4. A resist composition comprising a polymer derived from the monomer has a high sensitivity to high-energy radiation, especially EUV. ##STR00001##

A resist composition is provided comprising a base polymer containing an iodized polymer, and an acid generator containing a sulfonium salt and/or iodonium salt of iodized benzene ring-containing fluorosulfonic acid. When processed by lithography, the resist composition exhibits a high sensitivity, low LWR and improved CDU independent of whether it is of positive tone or negative tone.

A neutral layer composition and a neutral layer formed from the same are disclosed herein. In some embodiments, a neutral layer composition includes a random copolymer having a unit represented by Formula 1, and a unit containing an aromatic structure having one or more halogen atoms, wherein the molar amount of the unit represented by Formula 1 is present in a range of 9 mol % to 32 mol %, based on the total molar amount of the copolymer. The neutral layer can effectively control orientation characteristics of various block copolymers deposited thereon.

A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of a carboxylic acid having an iodized or brominated aromatic ring exhibits a high sensitivity, high resolution, low edge roughness (LER, LWR) and small size variation, and forms a pattern of good profile after exposure and development.

A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of a carboxylic acid having an iodized or brominated aromatic ring exhibits a high sensitivity, high resolution, low edge roughness (LER, LWR) and small size variation, and forms a pattern of good profile after exposure and development.