A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of a carboxylic acid having an iodized or brominated aromatic ring exhibits a high sensitivity, high resolution, low edge roughness (LER, LWR) and small size variation, and forms a pattern of good profile after exposure and development.

A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of a carboxylic acid having an iodized or brominated aromatic ring exhibits a high sensitivity, high resolution, low edge roughness (LER, LWR) and small size variation, and forms a pattern of good profile after exposure and development.

An object of the present invention is to provide a composition for lithography capable of obtaining a film in contact with a resist layer or an underlayer film capable of forming a pattern excellent in exposure sensitivity the like. The object can be achieved by a composition for lithography containing a compound having at least one element selected from the group consisting of iodine, tellurium, and fluorine, or a resin having a constituent unit derived from the compound, wherein a total mass of the atoms in the compound is 15% by mass or more and 75% by mass or less.

An object of the present invention is to provide a composition for lithography capable of obtaining a film in contact with a resist layer or an underlayer film capable of forming a pattern excellent in exposure sensitivity the like. The object can be achieved by a composition for lithography containing a compound having at least one element selected from the group consisting of iodine, tellurium, and fluorine, or a resin having a constituent unit derived from the compound, wherein a total mass of the atoms in the compound is 15% by mass or more and 75% by mass or less.

Disclosed is a resin comprising a structural unit derived from a compound represented by formula (I) and a structural unit having an acid-labile group: ##STR00001## ##STR00002##
wherein R.sup.1 represents a hydrocarbon group which may have a substituent, R.sup.2 each independently represent an alkyl group which may have a halogen atom, a hydrogen atom or a halogen atom, Ar represents an aromatic hydrocarbon group which may have a substituent, L.sup.1 represents a group represented by formula (L.sup.1-1), etc., L.sup.11, L.sup.13, L.sup.15 and L.sup.17 each independently represent an alkanediyl group, L.sup.12, L.sup.14, L.sup.16 and L.sup.18 each independently represent —O—, —CO—, —CO—O—, etc., * and ** are bonds, and ** represents a bond to an iodine atom.

An object is to obtain a conductive polymer composition having favorable filterability and film formability, and being capable of relieving acidity, forming a conductive film with high transparency, and imparting leveling property on a substrate, the composition being applicable in droplet-coating methods, such as spray coating and inkjet printing. The conductive polymer composition contains: a composite containing a π-conjugated polymer (A) and a polymer (B) shown by the following general formula (1); H.sub.2O (D) for dispersing the composite; and a water-soluble organic solvent (C).

##STR00001##

A neutral layer composition and a neutral layer formed from the same are disclosed herein. In some embodiments, a neutral layer composition includes a random copolymer having a unit represented by Formula 1, and a unit containing an aromatic structure having one or more halogen atoms, wherein the molar amount of the unit represented by Formula 1 is present in a range of 9 mol % to 32 mol %, based on the total molar amount of the copolymer. The neutral layer can effectively control orientation characteristics of various block copolymers deposited thereon.

An antireflective film including: a support base, and a pattern composed of a photoresist material formed on the support base, the pattern having a larger size at a point closer to the support base. The photoresist material contains a polymer compound having an aromatic group, and the polymer compound includes at least one of: (i) a repeating unit having a cyclopentadienyl complex structure, (ii) a repeating unit having a naphthalene structure, and (iii) a repeating unit having a naphthalene structure and/or a fluorene structure. The repeating units having a naphthalene structure may include one of the following units: ##STR00001## The disclosed antireflective film shows an antireflection effect to decrease the reflection of light. A method of producing the antireflective film, and an eyeglass type display including the antireflective film are disclosed.

A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate and selectively exposing the photoresist layer to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern. The photoresist layer includes a photoresist composition including a photoactive compound and a polymer. The polymer has one or more of iodine or an iodo group attached to the polymer, and the polymer includes one or more monomer units having a crosslinker group, and the monomer units having a crosslinker group are one or more of:

##STR00001##

or the photoresist composition includes a photoactive compound, a polymer including an iodine or an iodo-group, and a crosslinker with two to six crosslinking groups.

A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate and selectively exposing the photoresist layer to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern. The photoresist layer includes a photoresist composition including a photoactive compound and a polymer. The polymer has one or more of iodine or an iodo group attached to the polymer, and the polymer includes one or more monomer units having a crosslinker group, and the monomer units having a crosslinker group are one or more of:

##STR00001##

or the photoresist composition includes a photoactive compound, a polymer including an iodine or an iodo-group, and a crosslinker with two to six crosslinking groups.