There is provided a resist overlayer film forming composition for use in a lithography process in semiconductor device production, which does not intermix with a resist, blocks undesirable exposure light particularly in EUV exposure, for example, UV and DUV and selectively transmits EUV alone, and which can be developed with a developer after exposure. A resist overlayer film forming composition comprising: a polymer including an organic group including a linear or branched saturated alkyl group having a carbon atom number of 1 to 10, in which some or all of hydrogen atoms thereof are substituted with fluorine atoms, and an optionally substituted C.sub.8-16 ether compound as a solvent.

The present embodiment provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1), ##STR00001##
wherein R.sup.1 represents a 2n-valent group having 1 to 60 carbon atoms, or a single bond, each R.sup.2 independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, a hydroxyl group, or a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, and may be the same or different in the same naphthalene ring or benzene ring, in which at least one R.sup.2 represents a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, n is an integer of 1 to 4, and structural formulae of n structural units in square brackets [ ] may be the same or different when n is an integer of 2 or more, X represents an oxygen atom, a sulfur atom, or a non-bridging group, each m.sup.2 is independently an integer of 0 to 7, provided that at least one m.sup.2 is an integer of 1 to 7, and each q is independently 0 or 1.

The present invention employs a compound represented by the following formula (1) and/or a resin comprising the compound as a constituent:

##STR00001## wherein R.sup.1 is a 2n-valent group of 1 to 60 carbon atoms or a single bond; R.sup.2 to R.sup.5 are each independently a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, an alkenyl group of 2 to 10 carbon atoms, an alkoxy group of 1 to 30 carbon atoms, a halogen atom, a thiol group, a hydroxy group, or a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group, provided that at least one selected from R.sup.2 to R.sup.5 is a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group; m.sup.2 and m.sup.3 are each independently an integer of 0 to 8; m.sup.4 and m.sup.3 are each independently an integer of 0 to 9, provided that m.sup.2, m.sup.3, m.sup.4, and m.sup.3 are not 0 at the same time; n is an integer of 1 to 4; and p.sup.2 to p.sup.5 are each independently an integer of 0 to 2.

The present invention provides a compound represented by following formula (1), ##STR00001##
wherein R.sup.1 represents a 2n-valent group having 1 to 30 carbon atoms, each of R.sup.2 to R.sup.5 independently represents a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a halogen atom, a thiol group or a hydroxyl group, provided that at least one selected from R.sup.1 to R.sup.5 represents a group including an iodine atom and at least one R.sup.4 and/or at least one R.sup.5 represent/represents one or more selected from the group consisting of a hydroxyl group and a thiol group, each of m.sup.2 and m.sup.3 independently represents an integer of 0 to 8, each of m.sup.4 and m.sup.5 independently represents an integer of 0 to 9, provided that m.sup.4 and m.sup.5 do not represent 0 at the same time, n represents an integer of 1 to 4, and each of p.sup.2 to p.sup.5 independently represents an integer of 0 to 2.

The present invention provides a compound represented by following formula (1), ##STR00001##
wherein R.sup.1 represents a 2n-valent group having 1 to 30 carbon atoms, each of R.sup.2 to R.sup.5 independently represents a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a halogen atom, a thiol group or a hydroxyl group, provided that at least one selected from R.sup.1 to R.sup.5 represents a group including an iodine atom and at least one R.sup.4 and/or at least one R.sup.5 represent/represents one or more selected from the group consisting of a hydroxyl group and a thiol group, each of m.sup.2 and m.sup.3 independently represents an integer of 0 to 8, each of m.sup.4 and m.sup.5 independently represents an integer of 0 to 9, provided that m.sup.4 and m.sup.5 do not represent 0 at the same time, n represents an integer of 1 to 4, and each of p.sup.2 to p.sup.5 independently represents an integer of 0 to 2.

The resist material according to the present invention contains a compound represented by the following formula (1): ##STR00001## wherein each R.sup.0 is independently a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group, or a halogen atom; and each p is independently an integer of 0 to 4.

The resist material according to the present invention contains a compound represented by the following formula (1): ##STR00001## wherein each R.sup.0 is independently a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group, or a halogen atom; and each p is independently an integer of 0 to 4.

The material for forming a film for lithography according to the present invention contains a compound represented by the following formula (1): ##STR00001##
wherein, each R.sup.0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4.

The material for forming a film for lithography according to the present invention contains a compound represented by the following formula (1): ##STR00001##
wherein, each R.sup.0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4.

Provided are a novolac-type phenolic hydroxy group-containing resin having excellent developability, heat resistance, and dry etching resistance and a resist film. The novolac-type phenolic hydroxy group-containing resin includes, as a repeating unit, a structural moiety (I) represented by Structural Formula (1):

##STR00001##

wherein Ar represents an arylene group; R.sup.1's each independently represent any one of a hydrogen atom, an alkyl group, an alkoxy group, an aryl group, an aralkyl group, and a halogen atom; and m's each independently represent an integer of 1 to 3, or a structural moiety (II) represented by Structural Formula (2):

##STR00002##

wherein Ar represents an arylene group; R.sup.1's each independently represent any one of a hydrogen atom, an alkyl group, an alkoxy group, an aryl group, an aralkyl group, and a halogen atom; and m's each independently represent an integer of 1 to 3.