Patent classifications
C08G8/14
Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method
The present invention employs a compound represented by the following formula (1) and/or a resin comprising the compound as a constituent: ##STR00001## wherein R.sup.1 is a 2n-valent group of 1 to 60 carbon atoms or a single bond; R.sup.2 to R.sup.5 are each independently a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, an alkenyl group of 2 to 10 carbon atoms, an alkoxy group of 1 to 30 carbon atoms, a halogen atom, a thiol group, a hydroxy group, or a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group, provided that at least one selected from R.sup.2 to R.sup.5 is a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group; m.sup.2 and m.sup.3 are each independently an integer of 0 to 8; m.sup.4 and m.sup.5 are each independently an integer of 0 to 9, provided that m.sup.2, m.sup.3, m.sup.4, and m.sup.5 are not 0 at the same time; n is an integer of 1 to 4; and p.sup.2 to p.sup.5 are each independently an integer of 0 to 2.
Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method
The present invention employs a compound represented by the following formula (1) and/or a resin comprising the compound as a constituent: ##STR00001## wherein R.sup.1 is a 2n-valent group of 1 to 60 carbon atoms or a single bond; R.sup.2 to R.sup.5 are each independently a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, an alkenyl group of 2 to 10 carbon atoms, an alkoxy group of 1 to 30 carbon atoms, a halogen atom, a thiol group, a hydroxy group, or a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group, provided that at least one selected from R.sup.2 to R.sup.5 is a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group; m.sup.2 and m.sup.3 are each independently an integer of 0 to 8; m.sup.4 and m.sup.5 are each independently an integer of 0 to 9, provided that m.sup.2, m.sup.3, m.sup.4, and m.sup.5 are not 0 at the same time; n is an integer of 1 to 4; and p.sup.2 to p.sup.5 are each independently an integer of 0 to 2.
POLYMER MEDICAMENT FOR TREATING HYPERKALEMIA AND PREPARATION METHOD THEREOF
Provided are a polymer medicament for treating hyperkalemia, and a preparation method thereof. Specifically, a polymer is provided, and the polymer includes repeating units obtained by polymerizing a monomer and a crosslinking agent. A molar ratio of the monomer to the crosslinking reagent ranges from 1:0.02 to 1:0.20. The monomer includes an acidic group and a pKa-reducing group next to the acidic group. The acidic group is selected from the group consisting of sulfonic acid group (—SO.sub.3—), sulfuric acid group (—OSO.sub.3—), carboxylic group (—CO.sub.2—), phosphonic acid group (—OPO.sub.3.sup.2—), phosphate group (—OPO.sub.3.sup.2—), and sulfamic acid group (—NHSO.sub.3—). The pKa-reducing group is selected from the group consisting of nitro, cyano, carbonyl, trifluoromethyl, and halogen atoms. The crosslinking agent has three or four reaction sites. The polymer can be used to treat hyperkalemia.
POLYMER MEDICAMENT FOR TREATING HYPERKALEMIA AND PREPARATION METHOD THEREOF
Provided are a polymer medicament for treating hyperkalemia, and a preparation method thereof. Specifically, a polymer is provided, and the polymer includes repeating units obtained by polymerizing a monomer and a crosslinking agent. A molar ratio of the monomer to the crosslinking reagent ranges from 1:0.02 to 1:0.20. The monomer includes an acidic group and a pKa-reducing group next to the acidic group. The acidic group is selected from the group consisting of sulfonic acid group (—SO.sub.3—), sulfuric acid group (—OSO.sub.3—), carboxylic group (—CO.sub.2—), phosphonic acid group (—OPO.sub.3.sup.2—), phosphate group (—OPO.sub.3.sup.2—), and sulfamic acid group (—NHSO.sub.3—). The pKa-reducing group is selected from the group consisting of nitro, cyano, carbonyl, trifluoromethyl, and halogen atoms. The crosslinking agent has three or four reaction sites. The polymer can be used to treat hyperkalemia.
Resist composition, method for forming resist pattern, and polyphenol compound used therein
The present invention is a compound represented by the following general formula (1). ##STR00001##
Resist composition, method for forming resist pattern, and polyphenol compound used therein
The present invention is a compound represented by the following general formula (1). ##STR00001##
Compound, resist composition, and method for forming resist pattern using it
The resist composition of the present invention contains one or more selected from compounds represented by specific formulae and resins obtained using these as monomers.
Compound, resist composition, and method for forming resist pattern using it
The resist composition of the present invention contains one or more selected from compounds represented by specific formulae and resins obtained using these as monomers.
Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method
The present invention employs a compound represented by the following formula (1) and/or a resin comprising the compound as a constituent: ##STR00001## wherein R.sup.1 is a 2n-valent group of 1 to 60 carbon atoms or a single bond; R.sup.2 to R.sup.5 are each independently a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, an alkenyl group of 2 to 10 carbon atoms, an alkoxy group of 1 to 30 carbon atoms, a halogen atom, a thiol group, a hydroxy group, or a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group, provided that at least one selected from R.sup.2 to R.sup.5 is a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group; m.sup.2 and m.sup.3 are each independently an integer of 0 to 8; m.sup.4 and m.sup.5 are each independently an integer of 0 to 9, provided that m.sup.2, m.sup.3, m.sup.4, and m.sup.5 are not 0 at the same time; n is an integer of 1 to 4; and p.sup.2 to p.sup.5 are each independently an integer of 0 to 2.
Resist overlayer film forming composition for lithography and method for producing semiconductor device using the same
There is provided a resist overlayer film forming composition for use in a lithography process in semiconductor device production, which does not intermix with a resist, blocks undesirable exposure light particularly in EUV exposure, for example, UV and DUV and selectively transmits EUV alone, and which can be developed with a developer after exposure. A resist overlayer film forming composition comprising: a polymer including an organic group including a linear or branched saturated alkyl group having a carbon atom number of 1 to 10, in which some or all of hydrogen atoms thereof are substituted with fluorine atoms, and an optionally substituted C.sub.8-16 ether compound as a solvent.