A method for preparing a resol-type phenolic resin comprising the following steps: a) a step of condensing phenol and formaldehyde, in a basic medium, the formaldehyde being in molar excess with respect to the phenol, at a condensation temperature of at least 50° C. until the phenol conversion rate is 50 to 80%, whereby a resol-type phenolic resin results comprising free formaldehyde; b) a step of measuring the free formaldehyde content of the phenolic resin obtained in a); c) a step of reducing the free formaldehyde content of the phenolic resin obtained in a) by placing it in contact with an aminophenolic compound in an excess amount with respect to the free formaldehyde and at a temperature lower than the condensation temperature of step a).

A method for preparing a resol-type phenolic resin comprising the following steps: a) a step of condensing phenol and formaldehyde, in a basic medium, the formaldehyde being in molar excess with respect to the phenol, at a condensation temperature of at least 50° C. until the phenol conversion rate is 50 to 80%, whereby a resol-type phenolic resin results comprising free formaldehyde; b) a step of measuring the free formaldehyde content of the phenolic resin obtained in a); c) a step of reducing the free formaldehyde content of the phenolic resin obtained in a) by placing it in contact with an aminophenolic compound in an excess amount with respect to the free formaldehyde and at a temperature lower than the condensation temperature of step a).

A resist underlayer film which has an excellent hard mask function and can form an excellent pattern shape. A resist underlayer film-forming composition to be used for a lithography process, including a novolac polymer obtained by reaction of an aldehyde compound and an aromatic compound having a secondary amino group. The novolac polymer contains a unit structure of Formula (1): ##STR00001##
A method for producing a semiconductor device, including the steps of: forming a resist underlayer film from the resist underlayer film-forming composition on a semiconductor substrate; forming a hard mask on the resist underlayer film; further forming a resist film on the hard mask; forming a resist pattern by irradiation with light or an electron beam and development; etching the hard mask by using the formed resist pattern; etching the resist underlayer film by using the patterned hard mask; and processing the semiconductor substrate by using the patterned underlayer film.

A resist underlayer film which has an excellent hard mask function and can form an excellent pattern shape. A resist underlayer film-forming composition to be used for a lithography process, including a novolac polymer obtained by reaction of an aldehyde compound and an aromatic compound having a secondary amino group. The novolac polymer contains a unit structure of Formula (1): ##STR00001##
A method for producing a semiconductor device, including the steps of: forming a resist underlayer film from the resist underlayer film-forming composition on a semiconductor substrate; forming a hard mask on the resist underlayer film; further forming a resist film on the hard mask; forming a resist pattern by irradiation with light or an electron beam and development; etching the hard mask by using the formed resist pattern; etching the resist underlayer film by using the patterned hard mask; and processing the semiconductor substrate by using the patterned underlayer film.

Disclosed herein are polymers formed by the condensation of bis(hydroxycarbyl)-aminophenolic compounds with aldehydes. The condensation polymers include one or more repeat units having bis(hydroxycarbyl)amino functionality. The hydroxyl groups of the bis(hydroxycarbyl)amino functionalities are available for further condensation with an epoxide, such as ethylene oxide, to yield a polyalkoxylated polymer. The polymers are useful as antipolymerants, polymerization retardants, surfactants, or a combination of these in one or more industrial systems.

Disclosed herein are polymers formed by the condensation of bis(hydroxycarbyl)-aminophenolic compounds with aldehydes. The condensation polymers include one or more repeat units having bis(hydroxycarbyl)amino functionality. The hydroxyl groups of the bis(hydroxycarbyl)amino functionalities are available for further condensation with an epoxide, such as ethylene oxide, to yield a polyalkoxylated polymer. The polymers are useful as antipolymerants, polymerization retardants, surfactants, or a combination of these in one or more industrial systems.

Polymers are formed by the condensation of bis(hydroxycarbyl)-aminophenolic compounds with aldehydes. The condensation polymers include one or more repeat units having bis(hydroxycarbyl)amino functionality. The polymers are useful as antifoulants, antipolymerants, rheology modifiers, dehazers, polymerization retardants, surfactants, or a combination of these in one or more industrial process streams.

Polymers are formed by the condensation of bis(hydroxycarbyl)-aminophenolic compounds with aldehydes. The condensation polymers include one or more repeat units having bis(hydroxycarbyl)amino functionality. The polymers are useful as antifoulants, antipolymerants, rheology modifiers, dehazers, polymerization retardants, surfactants, or a combination of these in one or more industrial process streams.

Disclosed herein are polymers formed by the condensation of bis(hydroxycarbyl)-aminophenolic compounds with aldehydes. The condensation polymers include one or more repeat units having bis(hydroxycarbyl)amino functionality. The polymers are useful as antifoulants, antipolymerants, rheology modifiers, dehazers, polymerization retardants, surfactants, or a combination of these in one or more industrial process streams.

Disclosed herein are polymers formed by the condensation of bis(hydroxycarbyl)-aminophenolic compounds with aldehydes. The condensation polymers include one or more repeat units having bis(hydroxycarbyl)amino functionality. The polymers are useful as antifoulants, antipolymerants, rheology modifiers, dehazers, polymerization retardants, surfactants, or a combination of these in one or more industrial process streams.