C08G8/20

Stable Lignin-Phenol Blend for Use in Lignin Modified Phenol-Formaldehyde Resins

Provided is a stable lignin-phenol blend for use in lignin modified phenol-formaldehyde resins comprising lignin in an amount between 10-80 wt %, phenol in an amount between 15-90 wt %, and a solubilizer in an amount between 0%-25 wt %.

Stable Lignin-Phenol Blend for Use in Lignin Modified Phenol-Formaldehyde Resins

Provided is a stable lignin-phenol blend for use in lignin modified phenol-formaldehyde resins comprising lignin in an amount between 10-80 wt %, phenol in an amount between 15-90 wt %, and a solubilizer in an amount between 0%-25 wt %.

Aromatic alcohol-lignin-aldehyde resins and processes for making and using same

Aromatic alcohol-lignin-aldehyde resins and process for making and using same. In some examples, a process for making a resin can include heating a first mixture that includes a lignin, an aromatic alcohol, and a base compound to produce a second mixture that can include an activated lignin, the aromatic alcohol, and the base compound. The second mixture can be heated with an aldehyde to produce a third mixture that can include an aromatic alcohol-lignin-aldehyde resin and unreacted free aldehyde. In some examples, an aromatic alcohol-lignin-aldehyde resin can be or include a co-polymer of an activated lignin, an aromatic alcohol, and an aldehyde. A weight ratio of the activated lignin to the aromatic alcohol can be about 20:80 to about 95:5.

Aromatic alcohol-lignin-aldehyde resins and processes for making and using same

Aromatic alcohol-lignin-aldehyde resins and process for making and using same. In some examples, a process for making a resin can include heating a first mixture that includes a lignin, an aromatic alcohol, and a base compound to produce a second mixture that can include an activated lignin, the aromatic alcohol, and the base compound. The second mixture can be heated with an aldehyde to produce a third mixture that can include an aromatic alcohol-lignin-aldehyde resin and unreacted free aldehyde. In some examples, an aromatic alcohol-lignin-aldehyde resin can be or include a co-polymer of an activated lignin, an aromatic alcohol, and an aldehyde. A weight ratio of the activated lignin to the aromatic alcohol can be about 20:80 to about 95:5.

PHLOROGLUCINOLIC RESINS, METHODS OF MAKING, AND USES IN RUBBER COMPOSITIONS
20230064028 · 2023-03-02 ·

A solid phloroglucinolic resin comprises reacting a phloroglucinolic compound and a ketone in the presence of an acid catalyst. The solid phloroglucinolic resin formed includes multiple phloroglucinolic units defined by formula (I)

##STR00001##

wherein at least one of R1, R2, and R3 combines with a second phloroglucinolic unit to form a di-substituted methylene bridge, wherein the second one of R1, R2, and R3 is a hydrogen atom or combines with a third phloroglucinolic unit to form another di-substituted methylene bridge, and wherein the third one of R1, R2 and R3 is a hydrogen atom.

MATERIAL FOR FORMING FILLING FILM FOR INHIBITING SEMICONDUCTOR SUBSTRATE PATTERN COLLAPSE, AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE

A material for forming a filling film for inhibiting semiconductor substrate pattern collapse contains: (A) a polymer having a structural unit shown by the following general formula (1); (B) a residual-solvent removal promoter containing a compound shown by the following general formula (2); and (C) an organic solvent. A ratio Mw/Mn of a weight-average molecular weight Mw and a number-average molecular weight Mn of the polymer (A) in terms of polystyrene by a gel permeation chromatography method is 2.50≤Mw/Mn≤9.00. The residual-solvent removal promoter (B) is contained in an amount of 0.1 to 40 parts by mass based on 100 parts by mass of the polymer (A). The material for forming a filling film for inhibiting semiconductor substrate pattern collapse contains no acid generator.

##STR00001##

##STR00002##

PHOTORESIST UNDERLAYER COMPOSITION
20230194990 · 2023-06-22 ·

A method of forming a pattern, the method comprising: applying a photoresist underlayer composition over a substrate to provide a photoresist underlayer; forming a photoresist layer over the photoresist underlayer; patterning the photoresist layer; and transferring a pattern from the patterned photoresist layer to the photoresist underlayer. The photoresist underlayer composition includes a polymer that includes a repeating unit represented by Formula 1 as described herein, a compound including a substituent group represented by Formula 2 as described herein, and a solvent.

##STR00001##

Compound containing phenolic hydroxy group, photosensitive composition, composition for resists, resist coating film, curable composition, composition for resist underlayer films, and resist underlayer film
09828457 · 2017-11-28 · ·

Provided is a compound containing a phenolic hydroxy group which has excellent heat resistance, a resist composition which has excellent thermal decomposition resistance, optical sensitivity and resolution, and a composition for a resist underlayer coating which has excellent thermal decomposition resistance and dry etching resistance. The compound containing a phenolic hydroxy group has a molecular structure represented by Structural Formula (1) below: ##STR00001##
wherein R.sup.1 is a hydrogen atom, an alkyl group or an aryl group, n is an integer of 2 to 10, R.sup.2 is any one of an alkyl group, an alkoxy group, an aryl group, an aralkyl group and a halogen atom, m is an integer of 0 to 4, and when m is 2 or greater, a plurality of R.sup.2's may be the same as or different from each other and may be bonded to either one of two aromatic rings of the naphthylene skeleton.

Compound containing phenolic hydroxy group, photosensitive composition, composition for resists, resist coating film, curable composition, composition for resist underlayer films, and resist underlayer film
09828457 · 2017-11-28 · ·

Provided is a compound containing a phenolic hydroxy group which has excellent heat resistance, a resist composition which has excellent thermal decomposition resistance, optical sensitivity and resolution, and a composition for a resist underlayer coating which has excellent thermal decomposition resistance and dry etching resistance. The compound containing a phenolic hydroxy group has a molecular structure represented by Structural Formula (1) below: ##STR00001##
wherein R.sup.1 is a hydrogen atom, an alkyl group or an aryl group, n is an integer of 2 to 10, R.sup.2 is any one of an alkyl group, an alkoxy group, an aryl group, an aralkyl group and a halogen atom, m is an integer of 0 to 4, and when m is 2 or greater, a plurality of R.sup.2's may be the same as or different from each other and may be bonded to either one of two aromatic rings of the naphthylene skeleton.

PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE ELEMENT, CURED PRODUCT, SEMICONDUCTOR DEVICE, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING CIRCUIT SUBSTRATE

A photosensitive resin composition comprises: a resin having a phenolic hydroxyl group; a photosensitive acid generator; a compound having at least one selected from the group consisting of an aromatic ring, a heterocycle and an alicycle, and at least one selected from the group consisting of a methylol group and an alkoxyalkyl group; an aliphatic compound having two or more functional groups being at least one selected from the group consisting of an acryloyloxy group, a methacryloyloxy group, a glycidyloxy group, an oxetanyl alkyl ether group, a vinyl ether group and a hydroxyl group; and a compound having at least one skeleton selected from the group consisting of an anthracene skeleton, a phenanthrene skeleton, a pyrene skeleton, a perylene skeleton, a carbazole skeleton, a phenothiazine skeleton, a xanthone skeleton, a thioxanthone skeleton, an acridine skeleton, a phenylpyrazoline skeleton, a distyrylbenzene skeleton and a distyrylpyridine skeleton, or a benzophenone compound.