There is provided resist underlayer film for lithography process with high dry etching resistance, wiggling resistance, and heat resistance. Resist underlayer film-forming composition for lithography including polymer having unit structure of Formula (1): wherein A is hydroxy group-substituted C.sub.6-40 arylene group derived from polyhydroxy aromatic compound; B is C.sub.6-40 arylene group or C.sub.4-30 heterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof; X.sup.+ is H.sup.+, NH.sub.4.sup.+, primary ammonium ion, secondary ammonium ion, tertiary ammonium ion, or quaternary ammonium ion, T is hydrogen atom, C.sub.1-10 alkyl group or C.sub.6-40 aryl group that may be substituted with halogen group, hydroxy group, nitro group, amino group, carboxylate ester group, nitrile group, or combination thereof as substituent, or C.sub.4-30 heterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof, B and T may form C.sub.4-40 ring together with carbon atom to which they are bonded. ##STR00001##

There is provided resist underlayer film for lithography process with high dry etching resistance, wiggling resistance, and heat resistance. Resist underlayer film-forming composition for lithography including polymer having unit structure of Formula (1): wherein A is hydroxy group-substituted C.sub.6-40 arylene group derived from polyhydroxy aromatic compound; B is C.sub.6-40 arylene group or C.sub.4-30 heterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof; X.sup.+ is H.sup.+, NH.sub.4.sup.+, primary ammonium ion, secondary ammonium ion, tertiary ammonium ion, or quaternary ammonium ion, T is hydrogen atom, C.sub.1-10 alkyl group or C.sub.6-40 aryl group that may be substituted with halogen group, hydroxy group, nitro group, amino group, carboxylate ester group, nitrile group, or combination thereof as substituent, or C.sub.4-30 heterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof, B and T may form C.sub.4-40 ring together with carbon atom to which they are bonded. ##STR00001##

The present invention is related to a method of preparing an alkoxylated resol-type phenol resin and an alkoxylated resol-type phenol resin. An alkoxylated resol-type phenol resin prepared using the method is capable of obtaining a coating film having excellent corrosion resistance, salt resistance, and color characteristics may be prepared, and a composition including the alkoxylated resol-type phenol resin as a curing agent may be suitably used as an vanish for coating the interior of beverage cans.

The present invention is related to a method of preparing an alkoxylated resol-type phenol resin and an alkoxylated resol-type phenol resin. An alkoxylated resol-type phenol resin prepared using the method is capable of obtaining a coating film having excellent corrosion resistance, salt resistance, and color characteristics may be prepared, and a composition including the alkoxylated resol-type phenol resin as a curing agent may be suitably used as an vanish for coating the interior of beverage cans.

A material for forming a filling film for inhibiting semiconductor substrate pattern collapse contains: (A) a polymer having a structural unit shown by the following general formula (1); (B) a residual-solvent removal promoter containing a compound shown by the following general formula (2); and (C) an organic solvent. A ratio Mw/Mn of a weight-average molecular weight Mw and a number-average molecular weight Mn of the polymer (A) in terms of polystyrene by a gel permeation chromatography method is 2.50≤Mw/Mn≤9.00. The residual-solvent removal promoter (B) is contained in an amount of 0.1 to 40 parts by mass based on 100 parts by mass of the polymer (A). The material for forming a filling film for inhibiting semiconductor substrate pattern collapse contains no acid generator.

##STR00001##

##STR00002##

A curable composition and a permanent resist film made using this curable composition are provided. The composition dissolves well in solvents, gives coatings superior in alkali developability, thermal decomposition resistance, light sensitivity, and resolution, and is particularly suitable for the formation of permanent resist films. Specifically, the composition is a curable composition for permanent resist films and contains a phenolic hydroxyl-containing compound (A) that has a molecular structure represented by structural formula (1):

##STR00001##

(where R.sup.1 is hydrogen, alkyl, or aryl, and n is an integer of 2 to 10; R.sup.2 is alkyl, alkoxy, aryl, aralkyl, or halogen, and m is an integer of 0 to 4; if m is 2 or more, the plurality of R.sup.2s may be the same or different from one another, and may be bonded to either of the two aromatic rings in the naphthylene structure) and a photosensitizer (B1) or curing agent (B2).

Provided is a compound containing a phenolic hydroxy group which has excellent heat resistance, a resist composition which has excellent thermal decomposition resistance, optical sensitivity and resolution, and a composition for a resist underlayer coating which has excellent thermal decomposition resistance and dry etching resistance. The compound containing a phenolic hydroxy group has a molecular structure represented by Structural Formula (1) below: ##STR00001##
wherein R.sup.1 is a hydrogen atom, an alkyl group or an aryl group, n is an integer of 2 to 10, R.sup.2 is any one of an alkyl group, an alkoxy group, an aryl group, an aralkyl group and a halogen atom, m is an integer of 0 to 4, and when m is 2 or greater, a plurality of R.sup.2's may be the same as or different from each other and may be bonded to either one of two aromatic rings of the naphthylene skeleton.

Provided is a compound containing a phenolic hydroxy group which has excellent heat resistance, a resist composition which has excellent thermal decomposition resistance, optical sensitivity and resolution, and a composition for a resist underlayer coating which has excellent thermal decomposition resistance and dry etching resistance. The compound containing a phenolic hydroxy group has a molecular structure represented by Structural Formula (1) below: ##STR00001##
wherein R.sup.1 is a hydrogen atom, an alkyl group or an aryl group, n is an integer of 2 to 10, R.sup.2 is any one of an alkyl group, an alkoxy group, an aryl group, an aralkyl group and a halogen atom, m is an integer of 0 to 4, and when m is 2 or greater, a plurality of R.sup.2's may be the same as or different from each other and may be bonded to either one of two aromatic rings of the naphthylene skeleton.

A phenolic hydroxyl-containing compound is provided. The compound dissolves well in solvents and can be formulated into compositions that give coatings superior in thermal decomposition resistance, alkali developability, resolution, and dry-etch resistance. Specifically, the compound is a phenolic hydroxyl-containing calixarene represented by structural formula (1):

##STR00001##

(where A is a structural unit including a dihydroxynaphthalene- or naphthol-derived structure optionally with a substituent alkyl, alkoxy, aryl, or aralkyl group or halogen atom on the aromatic rings and a methylene group optionally having an alkyl or aryl group in place of one of the hydrogen atoms) and obtained using a dihydroxynaphthalene in combination with a naphthol, with the total repeat number p being an integer of 2 to 10.

There is provided a new coating liquid for resist pattern coating. A coating liquid for resist pattern coating comprising a component A that is a polymer including at least one hydroxy group or carboxy group; a component B that is a sulfonic acid of A-SO.sub.3H (where A is a linear or branched alkyl group or fluorinated alkyl group having a carbon atom number of 1 to 16, an aromatic group having at least one of the alkyl group or the fluorinated alkyl group as a substituent, or a C.sub.4-16 alicyclic group optionally having a substituent); and a component C that is an organic solvent capable of dissolving the polymer and including ether or ketone compound of R.sup.1—O—R.sup.2 and/or R.sup.1—C(═O)—R.sup.2 (where R.sup.1 is a linear, branched, or cyclic alkyl group or fluorinated alkyl group having a carbon atom number of 3 to 16; and R.sup.2 is a linear, branched, or cyclic alkyl group or fluorinated alkyl group having a carbon atom number of 1 to 16), a method of forming a resist pattern using the coating liquid, and a method for forming a reverse pattern using the coating liquid.