An object of the present invention is to provide a treatment liquid for a semiconductor device, which is excellent in removal performance for residues present on a substrate, and to provide a substrate washing method using the treatment liquid.

The treatment liquid of the present invention is a treatment liquid for a semiconductor device, which includes water, a basic compound, hexylene glycol, and a compound A that is at least one kind selected from the group consisting of isobutene, (E)-2-methyl-1,3-pentadiene, 4-methyl-1,3-pentadiene, 2,2,4-trimethyloxetane, 4-methyl-3-penten-2-ol, and 2,4,4,6-tetramethyl-1,3-dioxane.

A cleaning liquid composition is provided. More particularly, a cleaning liquid composition includes a transition metal compound represented by Chemical Formula 1 (see the detailed description of the present invention); and a hydrocarbon-based solvent, and a cleaning method of a polymerization apparatus using the same.

An azeotropic composition a formulated with 1,1,1,3,3,3,-hexafluoro-2-methoxypropane and a second component selected from the group consisting of isopropyl alcohol, ethanol, methanol, and trans-1,2-dichloroethylene. The azeotropic composition exhibits a substantially constant boiling point at a constant pressure and is useful for various cleaning and degreasing applications.

Compositions and methods of the invention are directed to the removal of solid films, and particularly paint layers, from substrates, and particularly smooth, porous, and/or mineralogically fragile substrates such as sandstone. The compositions include cooked aqueous solutions of starch. The compositions can advantageously remove paints and other unwanted solid films from these and other substrates without damaging the substrate itself.

A semiconductor substrate cleaning method including removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by any of formulae (L0) to (L4).

Compositions or finishing solutions configured to remove unwanted material, such as uncured material or resin, from additively manufactured objects are disclosed herein, in one example, the finishing solution includes a first glycol ether and a second glycol ether and/or a high flash point hydrocarbon, wherein the finishing solution has a flash point of at least 93.3° C. In alternative examples, the finishing solution may also include a third glycol ether, a high flash point alcohol, and/or an acetate of a glycol ether.

The invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (in the formula, L represents a substituent to the benzene ring, and each of a plurality of Ls represents a C1 to C4 alkyl group; and k represents the number of Ls and is an integer of 0 to 5) in an amount of 80 mass % or more.

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The present invention provides cleaning solutions for removing ink, coating, varnish, adhesive, etc. residue from printing equipment. The cleaning solutions of the present invention comprise one or more solvents, preferably selected from acetoacetates, alcohols, glycol ethers, glycol esters, terpenes, and water, and are preferably free of surfactants. The cleaning solutions of the invention have a relative evaporation time (RET) of less than 60 seconds, and a ratio of the RET to the radius of the sphere of solubility of the resin in the ink to be removed of less than 6.

Disclosed is a thermoset, thermal insulating foams having desirable and unexpectedly low thermal conductivity, and to compositions, method and systems which use and/or are used to make such foams comprising: (a) providing thermosetting foam forming component and a blowing agent for forming predominantly closed cells in the foam, wherein the blowing agent comprises: (i) cis-1,1,1,4,4,4-hexafluoro-2-butene (HFO-1336mzzm(Z)) and cyclopentane, with the HFO-1336mzzm(Z) and cyclopentane in the blowing agent together comprising at least about 50% by weight of the total of all components in the blowing agent and (ii) the weight ratio of HFO-1336mzzm(Z) to cyclopentane in the blowing agent is from about 45:55 to less than 68:32 and (b) forming foam from said provided foamable composition.

Disclosed is a thermoset, thermal insulating foams having desirable and unexpectedly low thermal conductivity, and to compositions, method and systems which use and/or are used to make such foams comprising: (a) providing thermosetting foam forming component and a blowing agent for forming predominantly closed cells in the foam, wherein the blowing agent comprises: (i) cis-1,1,1,4,4,4-hexafluoro-2-butene (HFO-1336mzzm(Z)) and cyclopentane, with the HFO-1336mzzm(Z) and cyclopentane in the blowing agent together comprising at least about 50% by weight of the total of all components in the blowing agent and (ii) the weight ratio of HFO-1336mzzm(Z) to cyclopentane in the blowing agent is from about 45:55 to less than 68:32 and (b) forming foam from said provided foamable composition.