A method and cleaning composition for microelectronic devices or semiconductor substrates including at least one N alkanolamine; at least one hydroxylamine or derivatives of hydroxylamine or mixtures thereof; at least one polyfunctional organic acid with at least two carboxylic acid groups and water. The cleaning compositions can further include at least one corrosion inhibitor.

A composition and method are used to treat articles suspected of contamination with bacterial spores. The composition and method are effective against bacterial spores selected from C. diff., C. botulinum, C. sporogenes, B. cereus, and B. subtilis. The article can be a textile or a hard surface. The method includes preparing a first use solution by mixing ether amine in water and a second use solution by mixing percarboxylic acid in water; applying the first use solution to the article; and applying the second use solution to the article. An alternative method includes preparing a mixture of ether amine, percarboxylic acid, and water, and applying the mixture to the article.

A treatment liquid for a semiconductor device contains an organic alkali compound, a corrosion inhibitor, an organic solvent, Ca, Fe, and Na, in which each of the mass ratio of the Ca, the mass ratio of the Fe, and the mass ratio of the Na to the organic alkali compound in the treatment liquid is 10.sup.—12 to 10.sup.−4. A method for washing a substrate and a method for removing a resist use the treatment liquid.

A treatment liquid for a semiconductor device includes an alkanolamine; a hydroxylamine; an organic solvent; Ca; Fe; and Na, wherein the content of the alkanolamine in the treatment liquid is 0.1% to 5% by mass, the content of the hydroxylamine in the treatment liquid is 0.1% to 30% by mass, and each of the mass ratio of Ca, Fe, and Na with respect to the content of the alkanolamine and the hydroxylamine in the treatment liquid is 10.sup.−12 to 10.sup.−4.

Improved stripper solutions for removing photoresists from substrates are provided that exhibit improved compatibility with copper, leadfree solder, and epoxy-based molding compounds. The stripper solutions comprise a primary solvent, a secondary glycol ether solvent, potassium hydroxide, and an amine. The solutions also exhibit reduced potassium carbonate crystal formation compared to conventional formulations containing potassium hydroxide, and extended bath life compared to formulations containing tetramethylammonium hydroxide.

Provided is a novel compound that is expected to be used as a solvent, a cleaning agent, a blowing agent, an intermediate for a functional material, and so forth, as well as a production method therefor and uses thereof

As the novel compound, 1,2-dichoro-1-(2,2,2-trifluoroethoxy)ethylene is provided. This compound can be produced, for example, by allowing an addition reaction between 2,2,2-trifluoroethanol and trichloroethylene in the presence of a base.

Provided is a novel compound that is expected to be used as a solvent, a cleaning agent, a blowing agent, an intermediate for a functional material, and so forth, as well as a production method therefor and uses thereof As the novel compound, 1,2-dichoro-1-(2,2,2-trifluoroethoxy)ethylene is provided. This compound can be produced, for example, by allowing an addition reaction between 2,2,2-trifluoroethanol and trichloroethylene in the presence of a base.

A composition and method are used to treat articles suspected of contamination with bacterial spores. The composition and method are effective against bacterial spores selected from C. diff., C. botulinum, C. sporogenes, B. cereus, and B. subtilis. The article can be a textile or a hard surface. The method includes preparing a first use solution by mixing ether amine in water and a second use solution by mixing percarboxylic acid in water; applying the first use solution to the article; and applying the second use solution to the article. An alternative method includes preparing a mixture of ether amine, percarboxylic acid, and water, and applying the mixture to the article.

A treatment liquid for a semiconductor device includes an alkanolamine; a hydroxylamine; an organic solvent; Ca; Fe; and Na, wherein the content of the alkanolamine in the treatment liquid is 0.1% to 5% by mass, the content of the hydroxylamine in the treatment liquid is 0.1% to 30% by mass, and each of the mass ratio of Ca, Fe, and Na with respect to the content of the alkanolamine and the hydroxylamine in the treatment liquid is 10.sup.12 to 10.sup.4.

A treatment liquid for a semiconductor device includes an alkanolamine; a hydroxylamine; an organic solvent; Ca; Fe; and Na, wherein the content of the alkanolamine in the treatment liquid is 0.1% to 5% by mass, the content of the hydroxylamine in the treatment liquid is 0.1% to 30% by mass, and each of the mass ratio of Ca, Fe, and Na with respect to the content of the alkanolamine and the hydroxylamine in the treatment liquid is 10.sup.?12 to 10.sup.?4.