Aqueous formulation with a content of (A) and (B) in the range of 40% to 60%, containing

(A) a complexing agent selected from methylglycine diacetic acid (MGDA) that is at least partially neutralized with alkali metal, and at least one complexing agent other than MGDA selected from

(B) glutamic acid diacetic acid (GLDA) that is at least partially neutralized with alkali metal, and, optionally,

(C) a polymer being selected from polyamines, the N atoms being partially or fully substituted with CH.sub.2COOH groups, partially or fully neutralized with alkali metal cations, and, optionally,

(D) at least one alkali metal salt of an organic acid, said acid being selected from mono- and dicarboxylic acids,

wherein the weight ratio of complexing agent (A) to complexing agent (B) is in the range of from 10:1 to 1:10.

The present application is related to a container made of a polymer and containing a single unit dose of a detergent composition. The detergent composition contains at least two complexing agents (A) dissolved in an aqueous medium. The complexing agents (A) are (A1) at least one alkali metal salt of methyl glycine diacetic acid (MGDA), and (A2) at least one alkali metal salt of glutamic acid diacetic acid (GLDA). The complexing agents (A1) and (A2) are partially neutralized with alkali and the weight ratio of (A1) and (A2) ranges from 1:9 to 9:1. The aqueous medium contains at least 25% by weight of water relative to the entire liquid phase.

The present disclosure relates to high alkaline cleaners, cleaning systems and methods for removing polymerized zero trans fat soils. The high alkaline cleaner of the present invention generally includes one or more alkaline wetting and saponifying agent(s), a chelating/sequestering system and a surface modifying-threshold agent system. In various embodiments, the cleaners may include, at least one cleaning agent comprising a surfactant or surfactant system and/or a solvent or solvent system and/or a cleaning booster such as a peroxide or sulfite type additive. The cleaners may also include one or more components to modify the composition form and/or the application method in some embodiments. All components described above may also be optimized optionally, to provide emulsification of a composition (both as a usable product or a concentrate that can be diluted to form a usable product). The use of the high alkaline cleaner of the present invention has demonstrated enhanced cleaning characteristics especially at higher temperatures (100° F. to about 200° F.) but also shows enhanced cleaning at ambient temperatures.

This invention relates to a composition comprising: (a) 10-20 wt % acidifying bacteria, (b) 30-40 wt % of an oxidising agent, (c) 5-15 wt % of an organic acid, and (d) 1-10 wt % of a chelating agent. The invention also relates to a method of removing uric acid from a waste pipe comprising the step of inserting the composition into the waste pipe.

Phosphorus-free detergent compositions are provided. Detergent compositions including an aminocarboxylate, water conditioning agent, source of alkalinity and water beneficially do not require the use of additional surfactants and/or polymers to provide suitable detergency and prevent scale build-up on treated surfaces. The detergent compositions are used with a sanitizer to employ the phosphorus-free detergent compositions for use as low temperature ware wash detergents that beneficially reduce scale build-up. Methods of employing the phosphorus-free detergent compositions are also provided.

This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; and 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

A treatment liquid contains water, hydroxylamine, and one or more kinds of hydrazines selected from the group consisting of hydrazine, a hydrazine salt, and a hydrazine derivative, in which a total content of the hydrazines is 1 part by mass or less with respect to 100 parts by mass of the hydroxylamine.

The present disclosure relates to cleaning compositions that can be used to clean semiconductor substrates. These cleaning compositions can be used to remove defects arising from previous processing steps on these semiconductor substrates. These cleaning compositions can remove the defects/contaminants from the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one organic acid and at least one anionic polymer.

The present invention provides a cleaning composition for post CMP cleaning and method for post CMP cleaning microelectronic device. The cleaning composition according to the invention includes at least one chelating agent, at least one organic solvent, at least one polycarboxylic acid, at least one basic pH adjustor, at least one metal anticorrosive agent, and water. The TMAH-free cleaning composition according to the invention provides improved cleaning efficiency and electrochemical compatibility with both cobalt and copper materials.

This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; and 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.