The objective of the present invention is to provide a cleaning agent composition which contains a tertiary amine, and can suppress discoloration that occurs over time. This cleaning agent composition can suppress discoloration that occurs over time, by mixing a chelating agent together with a tertiary amine.

The objective of the present invention is to provide a cleaning agent composition which contains a tertiary amine, and can suppress discoloration that occurs over time. This cleaning agent composition can suppress discoloration that occurs over time, by mixing a chelating agent together with a tertiary amine.

The present invention relates to a photoresist stripper composition for manufacturing a display, and more particularly, to an integrated photoresist stripper composition which can be used in every process for manufacturing a display. More specifically, the photoresist stripper composition for manufacturing a display according to the present invention can be applied to all of transition metals and oxide semiconductor wirings, and has an excellent ability to remove modified photoresist after a hard bake process, and implant process, and a dry etch process have been performed. In particular, the photoresist stripper composition for manufacturing a display according to the present invention exhibits a corrosion inhibitory effect that has been further specialized for copper (Cu) wiring pattern edge portions which are susceptible to corrosion following dry-etching.

A composition for cleaning a substrate is provided. According to an embodiment, the composition for cleaning the substrate includes an organic solvent having a Hansen solubility parameter of 5 or more to 12 or less for polystyrene latex to the substrate.

A composition for cleaning a substrate is provided. According to an embodiment, the composition for cleaning the substrate includes an organic solvent having a Hansen solubility parameter of 5 or more to 12 or less for polystyrene latex to the substrate.

A substrate treating method, liquid and apparatus are provided which can reduce the amount of sublimable substance used for the drying of a substrate while reducing the collapse of pattern. The substrate treating method includes a step of supplying a liquid to the pattern-formed surface of the substrate, a step of solidifying the liquid on the pattern-formed surface to form a solidified body and a step of subliming the solidified body so as to remove it from the pattern-formed surface. The substrate treating liquid includes a molten sublimable substance and a solvent, the freezing point of the sublimable substance being higher than the freezing point of the solvent. When the sublimable substance and the solvent are separated, the sublimable substance is settled and in the solidification step, the settled sublimable substance is solidified to have a height equal to or higher than the height of a pattern.

A substrate treating method, liquid and apparatus are provided which can reduce the amount of sublimable substance used for the drying of a substrate while reducing the collapse of pattern. The substrate treating method includes a step of supplying a liquid to the pattern-formed surface of the substrate, a step of solidifying the liquid on the pattern-formed surface to form a solidified body and a step of subliming the solidified body so as to remove it from the pattern-formed surface. The substrate treating liquid includes a molten sublimable substance and a solvent, the freezing point of the sublimable substance being higher than the freezing point of the solvent. When the sublimable substance and the solvent are separated, the sublimable substance is settled and in the solidification step, the settled sublimable substance is solidified to have a height equal to or higher than the height of a pattern.

An object of the present invention is to provide a treatment liquid for a semiconductor substrate, which has excellent corrosion prevention performance for a metal-containing layer. In addition, another object of the present invention is to provide a chemical mechanical polishing method and a method for treating a semiconductor substrate.

The treatment liquid of an embodiment of the present invention is a treatment liquid for a semiconductor substrate, which includes a component A having two or more onium structures in the molecule and water, and has a pH of 6.0 to 13.5 at 25° C.

An aqueous composition includes (A) from 0.001 to 20 mass % of one or more kinds of fluorine-containing compounds selected from tetrafluoroboric acid, hexafluorosilicic acid, hexafluoroaluminic acid, hexafluorotitanic acid and a salt thereof, with respect to the total amount of the aqueous composition; and (B) from 0.0001 to 10 mass % of one or more kinds of compounds selected from a C.sub.4-13 alkylphosphonic acid, a C.sub.4-13 alkylphosphonate ester, a C.sub.4-13 alkyl phosphate and a salt thereof, with respect to the total amount of the aqueous composition.

An aqueous composition includes (A) from 0.001 to 20 mass % of one or more kinds of fluorine-containing compounds selected from tetrafluoroboric acid, hexafluorosilicic acid, hexafluoroaluminic acid, hexafluorotitanic acid and a salt thereof, with respect to the total amount of the aqueous composition; and (B) from 0.0001 to 10 mass % of one or more kinds of compounds selected from a C.sub.4-13 alkylphosphonic acid, a C.sub.4-13 alkylphosphonate ester, a C.sub.4-13 alkyl phosphate and a salt thereof, with respect to the total amount of the aqueous composition.