The technology disclosed relates to high utilization of donor material in a writing process using Laser-Induced Forward Transfer. Specifically, the technology relates to reusing, or recycling, unused donor material by recoating target substrates with donor material after a writing process is performed with the target substrate. Further, the technology relates to target substrates including a pattern of discrete separated dots to be individually ejected from the target substrate using LIFT.

A method may include providing a set of features in a mask layer, wherein a given feature comprises a first dimension along a first direction, second dimension along a second direction, orthogonal to the first direction, and directing an angled ion beam to a first side region of the set of features in a first exposure, wherein the first side region is etched a first amount along the first direction. The method may include directing an angled deposition beam to a second side region of the set of features in a second exposure, wherein a protective layer is formed on the second side region, the second side region being oriented perpendicularly with respect to the first side region. The method may include directing the angled ion beam to the first side region in a third exposure, wherein the first side region is etched a second amount along the first direction.

Energy bands of a thin film containing molecular clusters are tuned by controlling the size and the charge of the clusters during thin film deposition. Using atomic layer deposition, an ionic cluster film is formed in the gate region of a nanometer-scale transistor to adjust the threshold voltage, and a neutral cluster film is formed in the source and drain regions to adjust contact resistance. A work function semiconductor material such as a silver bromide or a lanthanum oxide is deposited so as to include clusters of different sizes such as dimers, trimers, and tetramers, formed from isolated monomers. A type of Atomic Layer Deposition system is used to deposit on semiconductor wafers molecular clusters to form thin film junctions having selected energy gaps. A beam of ions contains different ionic clusters which are then selected for deposition by passing the beam through a filter in which different apertures select clusters based on size and orientation.

A system and method for performing is laser induced forward transfer (LIFT) of 2D materials is disclosed. The method includes generating a receiver substrate, generating a donor substrate, wherein the donor substrate comprises a back surface and a front surface, applying a coating to the front surface, wherein the coating includes donor material, aligning the front surface of the donor substrate to be parallel to and facing the receiver substrate, wherein the donor material is disposed adjacent to the target layer, and irradiating the coating through the back surface of the donor substrate with one or more laser pulses produced by a laser to transfer a portion of the donor material to the target layer. The donor material may include Bi.sub.2S.sub.3-xS.sub.x, MoS.sub.2, hexagonal boron nitride (h-BN) or graphene. The method may be used to create touch sensors and other electronic components.

A system for performing substrateless and/or local donor Laser Induced Forward Transfer (LIFT), comprising a reservoir comprising at least one opening and an energy source configured to deliver energy to a donor material within said reservoir, characterized by at least one of: said reservoir is embedded into a medical device; said reservoir is in fluid connection with a medical device; said reservoir is incorporated into a medical device; said reservoir contains at least one biologically active substance; and, said reservoir is in fluid connection with at least one source of at least one biologically active substance. This system enables deposition of material by LIFT without any need for a donor substrate. Methods of substrateless and local donor LIFT, in particular for medical and biological applications, are also disclosed.

An apparatus for manufacturing a display device includes: a support to mount a display substrate having a pixel area; a multi-layered film disposed above the display substrate and including a light-transmissive base layer and a source layer disposed on the base layer facing the pixel area and including an organic material; and a laser device spaced apart from the multi-layered film to radiate a laser beam toward the multi-layered film. The source layer is capable of absorbing the laser beam.

A doped diamond semiconductor and method of production using a laser is disclosed herein. As disclosed, a dopant and/or a diamond or sapphire seed material may be added to a graphite based ablative layer positioned below a confinement layer, the ablative layer also being graphite based and positioned above a backing layer, to promote formation of diamond particles having desirable semiconductor properties via the action of a laser beam upon the ablative layer. Dopants may be incorporated into the process to activate the reaction sought to produce a material useful in production of a doped semiconductor or a doped conductor suitable for the purpose of modulating the electrical, thermal or quantum properties of the material produced. As disclosed, the diamond particles formed by either the machine or method of confined pulsed laser deposition disclosed may be arranged as semiconductors, electrical components, thermal components, quantum components and/or integrated circuits.

An encapsulation of laser direct structuring (LDS) material is molded onto a substrate having first and second semiconductor dice arranged thereon. Laser beam energy is applied to a surface of the encapsulation of LDS material to structure therein die vias extending through the LDS material to the first and second semiconductor dice and a die-to-die line extending at surface of the LDS material between die vias. Laser-induced forward transfer (LIFT) processing is applied to transfer electrically conductive material to the die vias and the die-to-die line extending between die vias. A layer of electrically conductive material electroless grown onto the die vias and the die-to-die line facilitates improved adhesion of the electrically conductive material transferred via LIFT processing.

Use of a laser-activatable component in a composition and/or use of a composition that includes the laser-activatable component, during laser transfer printing, characterized in that the laser-activatable component is activated by laser irradiation during use in such a way that the viscosity and/or the elasticity and/or the tack of the composition increase(s) due to an increase in temperature of the composition, wherein the laser-activatable component is a polymer made up of the groups comprising polyethylene glycol, polyvinylpyrrolidone, polyvinyl acetate, polyvinyl alcohol, polyacrylate, polyester, or copolymers of these polymers or blends.

Energy bands of a thin film containing molecular clusters are tuned by controlling the size and the charge of the clusters during thin film deposition. Using atomic layer deposition, an ionic cluster film is formed in the gate region of a nanometer-scale transistor to adjust the threshold voltage, and a neutral cluster film is formed in the source and drain regions to adjust contact resistance. A work function semiconductor material such as a silver bromide or a lanthanum oxide is deposited so as to include clusters of different sizes such as dimers, trimers, and tetramers, formed from isolated monomers. A type of Atomic Layer Deposition system is used to deposit on semiconductor wafers molecular clusters to form thin film junctions having selected energy gaps. A beam of ions contains different ionic clusters which are then selected for deposition by passing the beam through a filter in which different apertures select clusters based on size and orientation.