A cutting tool includes a substrate; and a coating film, wherein the coating film includes a multilayer structure layer having first unit layer(s) and second unit layer(s), the first unit layer(s) and the second unit layer(s) are alternately layered, under a condition X-ray diffraction intensities of different planes in the multilayer structure layer are respectively represented by I.sub.(200), I.sub.(111), and I.sub.(220), the following formula 0.6≤I.sub.(200)/{I.sub.(200)+I.sub.(111)+I.sub.(220)}, the first unit layer(s) has a NaCl-like structure in which an interplanar spacing d.sub.1c in a c-axis direction is larger than an interplanar spacing d.sub.1a in an a-axis direction, the second unit layer(s) has a NaCl-like structure in which an interplanar spacing d.sub.2c in the c-axis direction is smaller than an interplanar spacing d.sub.2a in the a-axis direction, and the following formulas are satisfied as well 1≤d.sub.1a/d.sub.2a≤1.02, 1.01≤d.sub.1c/d.sub.2c≤1.05, and d.sub.1a/d.sub.2a<d.sub.1c/d.sub.2c.

A fabrication method of a surface acoustic wave (SAW) filter includes obtaining a piezoelectric substrate, forming a back electrode on a first portion of the piezoelectric substrate, forming a first dielectric layer on the first portion of the piezoelectric substrate, forming a trench in the first dielectric layer, forming a second dielectric layer on the first dielectric layer formed with the trench, forming a third dielectric layer on the second dielectric layer, removing a second portion of the piezoelectric substrate to obtain a piezoelectric layer, forming an interdigital transducer (IDT) on the piezoelectric layer, and etching and releasing a portion of the first dielectric layer surrounded by the trench to form a cavity below the back electrode.

Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 10.sup.8 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

A strain gauge includes a flexible substrate and a functional layer formed of a metal, an alloy, or a metal compound, the functional layer being directly on one surface of the substrate. The strain gauge includes a resistor formed of a film that includes Cr, CrN, and Cr.sub.2N and that is formed with α-Cr as a main component. The functional layer includes a function of promoting crystal growth of α-Cr and forming an α-Cr based film.

A strain gauge includes a flexible substrate and a functional layer formed of a metal, an alloy, or a metal compound, the functional layer being directly on one surface of the substrate. The strain gauge includes a resistor formed of a film that includes Cr, CrN, and Cr.sub.2N and that is formed with α-Cr as a main component. The functional layer includes a function of promoting crystal growth of α-Cr and forming an α-Cr based film.

A wire grid polarizer (WGP) can have a conformal-coating to protect the WGP from at least one of the following: corrosion, dust, and damage due to tensile forces in a liquid on the WGP. The conformal-coating can include a silane conformal-coating with chemical formula (1), chemical formula (2), or combinations thereof: ##STR00001##
A method of applying a conformal-coating over a WGP can include exposing the WGP to Si(R.sup.1).sub.d(R.sup.2).sub.e(R.sup.3).sub.g. In the above WGP and method, X can be a bond to the ribs; each R.sup.1 can be a hydrophobic group; each R.sup.3, if any, can be any chemical element or group; d can be 1, 2, or 3, e can be 1, 2, or 3, g can be 0, 1, or 2, and d+e+g=4; R.sup.2 can be a silane-reactive-group; and each R.sup.6 can be an alkyl group, an aryl group, or combinations thereof.

The present invention provides a UV antireflective coating stack for ophthalmic lenses. The antireflective coating stack is deposited by sputtering, which lowers the reflectivity of the antireflective stack in the UV range and maintains low reflectivity in the visible range. The antireflective coating stack offers improved thermo-mechanical performance as compared to evaporation-based UV antireflective stacks.

A laminate including a glass plate and a coating layer, wherein the coating layer includes one or more components selected from the group consisting of silicon nitride, titanium oxide, alumina, niobium oxide, zirconia, indium tin oxide, silicon oxide, magnesium fluoride, and calcium fluoride, wherein a ratio (dc/dg) of a thickness dc of the coating layer to a thickness dg of the glass plate is in a range of 0.05×10.sup.−3 to 1.2×10.sup.−3, and wherein a radius of curvature r1 of the laminate with negating of self-weight deflection is 10 m to 150 m.

A method of depositing a backside film layer on a backside of a substrate includes loading a substrate having one or more films deposited on a front side of the substrate onto a substrate support of a processing chamber, depositing, from the sputter target, a target material on the backside of the substrate to form a backside layer on the backside of the substrate, and applying an RF bias to an electrode disposed within the substrate support while depositing the target material. The front side of the substrate faces the substrate support and is spaced from a top surface of the substrate support, and a backside of the substrate faces a sputter target of the processing chamber.

A film forming apparatus comprising: a processing container for accommodating a plurality of substrates, a substrate holder provided in the processing container and configured to hold the substrates such that the plurality of substrates are arranged along a circumferential direction; a rotating and revolving mechanism configured to rotate the plurality of substrates on the substrate holder and revolve the plurality of substrates on the substrate holder along the circumferential direction; and a sputtered particle emitting mechanism configured to emit sputtered particles to the plurality of substrates held by the substrate holder. Sputtering film formation is performed by emitting the sputtered particles from the sputtered particle emitting mechanism while rotating and revolving the plurality of substrates held by the substrate holder using the rotating and revolving mechanism.