C23C14/085

ELECTROCHROMIC ELEMENT AND DEVICES WITH BULK HETEROJUNCTION LAYER FOR ENHANCED DARK STATE RETENTION
20230046847 · 2023-02-16 ·

The present disclosure relates to electrochromic elements (10) and devices (110) comprising an electrochromic material layer (114), an insulating layer (116), and a bulk heterojunction layer (118), having one or more optical properties that may be changed upon application of an electric potential. Upon provision of an electric potential above a threshold, electrons and holes may be injected into the electrochromic layer (114) and bulk heterojunction layer (118), and blocked by the insulating layer (116), resulting in an accumulation of the electrons and holes in their respective electrochromic material resulting in a change to the one or more optical properties of the electrochromic materials (114; 118). An opposite electric potential may be provided to reverse the change in the one or more optical properties.

Multilayer material

Thermoregulated multilayer material characterized in that it comprises at least one substrate and one thermoregulated layer, said thermoregulated multilayer material having: for λ radiation of between 0.25 and 2 μm, an absorption coefficient αm≥0.8; and, for incident λ radiation of between 7.5 and 10 μm, a reflection coefficient ρm: ρm≥0.85, when the temperature T of said multilayer material 1 is ≤100° C.; ρm between 0.3 and 0.85, when the temperature T of said multilayer material is between 0 and 400° C.

FAR-INFRARED RAY TRANSMISSION MEMBER AND METHOD FOR MANUFACTURING FAR-INFRARED RAY TRANSMISSION MEMBER

To appropriately transmit far-infrared rays while ensuring design. A far-infrared ray transmission member (20) includes a base material (30) configured to transmit far-infrared rays, and a functional film (31) formed on the base material (30). Dispersion of reflectances with respect to pieces of light at a wavelength of 360 nm to 830 nm in increments of 1 nm is equal to or smaller than 30, a reflectance with respect to visible light defined by JIS R3106 is equal to or lower than 25%, and an average transmittance with respect to light at a wavelength of 8 μm to 12 μm is equal to or higher than 50%.

Sprayed lithium cobalt oxide targets

A sputtering target comprising a top coat including a composition of lithium cobalt oxide LiyCozOx. x is smaller than or equal to y+z, and the lithium cobalt oxide has an X-Ray diffraction pattern with a peak P2 at 44°±0.2° 2-theta. The X-Ray diffraction pattern is measured with an X-Ray diffractometer with CuKα1 radiation.

METHOD OF MANUFACTURING CRYSTALLINE MATERIAL FROM DIFFERENT MATERIALS

A method of manufacturing a crystalline layer of material on a surface, the crystalline layer including lithium, at least one transition metal and at least one counter-ion. The method includes the following steps: generating a plasma using a remote plasma generator, plasma sputtering material from a first target including lithium onto a surface of or supported by a substrate, there being at least a first plume corresponding to trajectories of particles from the first target onto the surface, and plasma sputtering material from a second target including at least one transition metal onto the surface, there being at least a second plume corresponding to trajectories of particles from the second target onto the surface. The first target is positioned to be non-parallel with the second target, the first plume and the second plume converge at a region proximate to the surface of or supported by the substrate, and the crystalline layer is formed on the surface at the region.

Manufacturing Method of Nitride Semiconductor Photoelectrode
20220403529 · 2022-12-22 ·

A method for producing a nitride semiconductor photoelectrode includes: a first step of forming an n-type gallium nitride layer on an electrically insulative or conductive substrate; a second step of forming an indium gallium nitride layer on the n-type gallium nitride layer; a third step of forming a p-type nickel oxide layer on the indium gallium nitride layer; and a fourth step of subjecting a nitride semiconductor in which the p-type nickel oxide layer has been formed to heat treatment.

CMAS-resistant protective layer

The present invention relates to a protective layer against CMAS, to a CMAS-resistant article comprising the protective layer according to the invention, and to a process for preparing a corresponding article.

Fabric coloring method and colored fabric

The present application provides a fabric coloring method and a colored fabric, where the fabric coloring method includes: performing radiation drying on a base cloth; sequentially forming an adhesive layer and at least one color-generating layer on a surface of the base cloth after the radiation drying by vacuum deposition, where the adhesive layer contains at least one of Ti, Cr, Si and Ni, and a thickness of the adhesive layer ranges from 1 nm to 2000 nm; the color-generating layer contains at least one of Al, Ti, Cu, Fe, Mo, Zn, Ag, Au, and Mg, and the total thickness of the color-generating layer ranges from 1 nm to 4000 nm. The fabric coloring method can not only produce rich colors and make the colored fabric have good color fastness, but also reduce the sensitivity of color of the colored fabric to thickness of the film, thus improving the industrial operability.

FABRICATION OF LOW DEFECTIVITY ELECTROCHROMIC DEVICES

Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition.

Coated API Particles

The present invention chiefly aims to provide a new API particle in which a metal or the like is coated on the API itself of a pharmaceutical solid dosage form.

The present invention includes, for example, a coated API particle, wherein the surface of an API particle is coated with a metal or a metal oxide (e.g., iron oxide) by sputter deposition, and a process for manufacturing a pharmaceutical solid dosage form (e.g., tablet) using the coated API particles.

According to the present invention, for example, it is possible to improve the photostability of an API itself or of pharmaceutical solid dosage forms produced with the API.