An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide film is selected from a group consisting of an Er—Y composition, an Er—Al—Y composition, an Er—Y—Zr composition, and an Er—Al composition.

An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide film consists essentially of 40 mol % to less than 100 mol % of Y.sub.2O.sub.3, over 0 mol % to 60 mol % of ZrO.sub.2, and 0 mol % to 9 mol % of Al.sub.2O.sub.3.

A method of producing perovskite nanocrystalline particles using a fluid mold includes a first operation for preparing a mixed solution including a first precursor compound, a second precursor compound, and a first solvent. A second operation for preparing a precursor solution by adding an organic ligand to the prepared mixed solution, a third operation for performing crystallization treatment after adding the prepared precursor solution to a reactor containing a fluid mold, and a fourth operation for separating the perovskite nanocrystalline particles from the crystallized solution through a centrifugal separator.

A thin film laminate comprises a metal layer consisting of a metal, and a thin film laminated on the surface of the metal layer, wherein a first direction is defined as one direction parallel to the surface of the metal layer, and a second direction is defined as one direction parallel to the surface of the metal layer and crossing the first direction; and the metal layer contains a plurality of first metal grains consisting of the metal and extending in the first direction on the surface of the metal layer, and a plurality of second metal grains consisting of the metal and extending in the second direction on the surface of the metal layer.

A method for making LNO film, including the steps of identifying a substrate, identifying a deposition target, placing the substrate and deposition target in a deposition environment, evolving target material into the deposition environment, and depositing evolved target material onto the substrate to yield an LNO film. The deposition environment defines a temperature of between 500 degrees Celsius and 750 degrees Celsius and a pressure of about 10.sup.−6 Torr. A seed or buffer layer may be first deposited onto the substrate, wherein the seed layer is about 30 mole percent gold and about 70 LiNbO.sub.3.

A physical vapor deposition system includes a deposition chamber, a support to hold a substrate in the deposition chamber, a target in the chamber, a power supply configured to apply power to the target to generate a plasma in the chamber to sputter material from the target onto the substrate to form a piezoelectric layer on the substrate, and a controller configured to cause the power supply to alternate between deposition phases in which the power supply applies power to the target and cooling phases in which power supply does not apply power to the target. Each deposition phase lasts at least 30 seconds and each cooling phase lasts at least 30 seconds.

A method of fabricating a piezoelectric layer includes depositing a piezoelectric material onto a substrate in a first crystallographic phase by physical vapor deposition while the substrate remains at a temperature below 400° C., and thermally annealing the substrate at a temperature above 500° C. to convert the piezoelectric material to a second crystallographic phase. The physical vapor deposition includes sputtering from a target in a plasma deposition chamber.

A preparation method of a silicon-based molecular beam heteroepitaxy material, a memristor, and use thereof are provided. A structure of the heteroepitaxy material is obtained by allowing a SrTiO.sub.3 layer, a La.sub.0.67Sr.sub.0.33MnO.sub.3 layer, and a (BaTiO.sub.3).sub.0.5—(CeO.sub.2).sub.0.5 layer to successively grow on a P-type Si substrate. The silicon-based epitaxy structure is obtained by allowing a first layer of SrTiO.sub.3, a second layer of La.sub.0.67Sr.sub.0.33MnO.sub.3, and a third layer of (BaTiO.sub.3).sub.0.5—(CeO.sub.2).sub.0.5 (in which an atomic ratio of BaTiO.sub.3 to CeO.sub.2 is 0.5:0.5) to successively grow at a specific temperature and a specific oxygen pressure. The preparation method of a silicon-based molecular beam heteroepitaxy material adopts pulsed laser deposition (PLD), which is relatively simple and easy to control, and can achieve the memristor function and neuro-imitation characteristics. A thickness of the first buffer layer of SrTiO.sub.3 can reach 40 nm.

An apparatus for laser deposition with a reactive gas includes a source, a target, and a substrate. The source emits a plasma jet of the reactive gas. The target generates a plasma plume of a deposition material when a laser beam ablates the target. The substrate collects a film resulting from a chemical reaction between the deposition material from the plasma plume and the reactive gas from the plasma jet. Correspondingly, a method for laser deposition with a reactive gas includes steps of emitting a plasma jet of the reactive gas, ablating a target with a laser beam, and collecting a film on a substrate. The plasma jet emits from an orifice of a source. Ablating the target generates a plasma plume of a deposition material. The film results from a chemical reaction between the deposition material from the plasma plume and the reactive gas from the plasma jet.

There are provided a piezoelectric film-attached substrate and piezoelectric element, which include, on a substrate in the following order, a lower electrode layer, a piezoelectric film containing a perovskite-type oxide containing lead as a main component of an A site, and a buffer layer, where the buffer layer contains a metal oxide represented by M.sub.dN.sub.1-dO.sub.e. Here, M consists of one or more metal elements substitutable for the A site of the perovskite-type oxide and has an electronegativity of less than 0.95. In a case of 0<d<1 and in a case where the electronegativity is denoted by X, 1.41X−1.05≤d≤A1.Math.exp(−X/t1)+y0, where A1=1.68×10.sup.12, t1=0.0306, and y0=0.59958.