Substrates that are bonding targets are bonded in ambient atmosphere via bonding films, including oxides, formed on bonding faces of the substrates. The bonding films, which are metal or semiconductor thin films formed by vacuum film deposition and at least the surfaces of which are oxidized, are formed into the respective smooth faces of two substrates having the smooth faces that serve as the bonding faces. The bonding films are exposed to a space that contains moisture, and the two substrates are overlapped in the ambient atmosphere such that the surfaces of the bonding films are made to be hydrophilic and the surfaces of the bonding films contact one another. Through this, a chemical bond is generated at the bonded interface, and thereby the two substrates are bonded together in the ambient atmosphere. The bonding strength γ can be improved by heating the bonded substrates at a temperature.

A cathode unit for performing a sputtering film formation includes: a target that emits sputtering particles; a target cooler that includes a cooling plate to which the target is bonded; and a power supply that supplies a power to the target. The target has a high-temperature region that has a higher temperature than other regions of the target during a film formation. The cooling plate includes a coolant flow space through which a coolant flows, and a first wall and a second wall that define the coolant flow space in a thickness direction. In the coolant flow space, a flow path of the coolant is formed by a first partition plate and a second partition plate. The first partition plate does not exist at a portion of the coolant flow space that corresponds to the high-temperature region.

A method of manufacturing high capacitance anode and cathode films of capacitors is revealed. Perform sputter deposition on a cathode aluminum foil in a vacuum chamber to form a cathode metal layer which is a titanium layer on a surface of the cathode aluminum foil. Then titanium continuously reacts with nitrogen to form cathode columnar crystal deposition on a surface of the cathode metal layer and get a cathode film. Perform sputter deposition on an anode aluminum foil in a vacuum chamber to form an anode metal layer which is a titanium layer on a surface of the anode aluminum foil. Then titanium continuously reacts with oxygen and nitrogen to form anode columnar crystal deposition on a surface of the anode metal layer and get an anode film. Next use the cathode and anode films with high capacitance to form cathode and anode electrodes of the capacitor.

The present invention relates to an implantable endoluminal graft comprised of a microporous thin-film metal covering having a plurality of openings and a structural support element underlying and physically attached to the microporous thin-film metal covering, the microporous thin-film metal covering having shape memory properties.

A high-temperature component made of a refractory metal or a refractory metal alloy, includes a coating for increasing thermal emissivity. The coating is formed substantially of tungsten and rhenium, i.e. of at least 55 wt. % rhenium and at least 10 wt. % tungsten, and has a Re3W phase of at least 35 wt. %. A process for producing a high-temperature component having a coating for increasing thermal emissivity, is also provided.

The present disclosure generally relates to a storage device comprising soft bias structures having high coercivity and high anisotropy, and a method of forming thereof. The soft bias structures may be formed by moving a wafer in a first direction under a plume of NiFe to deposit a first NiFe layer at a first angle, moving the wafer in a second direction anti-parallel to the first direction to deposit a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The soft bias structures may be formed by rotating a wafer to a first position, depositing a first NiFe layer at a first angle, rotating the wafer to a second position, depositing a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The first and second NiFe layers have different grain structures.

A coating-substrate combination includes: a Ni-based superalloy substrate comprising, by weight percent: 2.0-5.1 Cr; 0.9-3.3 Mo; 3.9-9.8 W; 2.2-6.8 Ta; 5.4-6.5 Al; 1.8-12.8 Co; 2.8-5.8 Re; 2.8-7.2 Ru; and a coating comprising, exclusive of Pt group elements, by weight percent: Ni as a largest content; 5.8-9.3 Al; 4.4-25 Cr; 3.0-13.5 Co; up to 6.0 Ta, if any; up to 6.2 W, if any; up to 2.4 Mo, if any; 0.3-0.6 Hf; 0.1-0.4 Si; up to 0.6 Y, if any; up to 0.4 Zr, if any; up to 1.0 Re, if any.

Provided is a method for making a porous graphene layer of a thickness of less than 100 nm, including the following steps: providing a catalytically active substrate, said catalytically active substrate on its surface being provided with a plurality of catalytically inactive domains having a size essentially corresponding to the size of the pores in the resultant porous graphene layer; and chemical vapour deposition and formation of the porous graphene layer on the surface of the catalytically active substrate;. The catalytically active substrate is a copper-nickel alloy substrate with a copper content in the range of 98 to less than 99.96% by weight and a nickel content in the range of more than 0.04-2% by weight, the copper and nickel contents complementing to 100% by weight of the catalytically active substrate.

Disclosed is a negative electrode current collector for an anode-free lithium metal battery. The negative electrode current collector includes a PdTe.sub.2 layer and an intermediate layer to inhibit the growth of lithium dendrite, resulting in significant improves in lifespan and performance of the lithium metal battery. The negative electrode current collector further includes an ion conductive layer to improve the performance of the lithium metal battery.

A method for manufacturing appliques on a dial for a timepiece.