A hydrogen-free carbon film polymer lubricating material and a preparation method and use thereof are disclosed. In the method, a graphite target is used as the target material, and a magnetron sputtering deposition is performed on a surface of the polymer substrate, thereby physically depositing and forming a hydrogen-free carbon film on the surface of the polymer substrate, thereby obtaining a hydrogen-free carbon film polymer lubricating material.

A cathode unit for performing a sputtering film formation includes: a target that emits sputtering particles; a target cooler that includes a cooling plate to which the target is bonded; and a power supply that supplies a power to the target. The target has a high-temperature region that has a higher temperature than other regions of the target during a film formation. The cooling plate includes a coolant flow space through which a coolant flows, and a first wall and a second wall that define the coolant flow space in a thickness direction. In the coolant flow space, a flow path of the coolant is formed by a first partition plate and a second partition plate. The first partition plate does not exist at a portion of the coolant flow space that corresponds to the high-temperature region.

Embodiments of the present disclosure provide a substrate processing system. In one embodiment, the system includes a chamber, a target disposed within the chamber, a magnetron disposed proximate the target, a pedestal disposed within the chamber, and a first gas injector disposed at a sidewall of the chamber, the first gas injector having a movable gas outlet.

A multiple sputtering target for magnetron arrangements has a tubular magnetron, for coating substrates in a vacuum chamber. The tubular magnetron is mounted in an end block or some other drive unit. A magnet bar is located in the tubular magnetron. Substrates transported along a circular path through a vacuum chamber can be coated with a selectable multiplicity of materials by magnetron sputtering. At least one polygonal carrier tube having an angular cross section has a plurality of longitudinally extending outer surfaces for receiving targets. A free extends longitudinally through the polygonal carrier tube. A magnet bar for forming plasma clouds outside the polygonal carrier tube is located in a working position in front of a target which can be selected by rotating the polygonal carrier tube. The moving or stationary substrate is located at a predetermined distance in front of the plasma clouds.

A physical vapor deposition chamber comprising a tilting substrate support is described. Methods of processing a substrate are also provided comprising tilting at least one of the substrate and the target to improve the uniformity of the layer on the substrate from the center of the substrate to the edge of the substrate. Process controllers are also described which comprise one or more process configurations causing the physical deposition chamber to perform the operations of rotating a substrate support within the physical deposition chamber and tilting the substrate support at a plurality of angles with respect to a horizontal axis.

A film forming apparatus for forming a thin film on a flexible substrate. The film forming apparatus forms a thin film on a flexible substrate under vacuum. The film forming apparatus includes a first zone into which a first gas is introduced and a second zone into which a second gas is introduced in a vacuum chamber. Zone separators have openings through which the flexible substrate passes. The film forming apparatus includes a mechanism that reciprocates the flexible substrate between the zones. Further, the film forming apparatus includes a mechanism that supplies a raw material gas containing metal or silicon to the first zone, and a mechanism that performs sputtering of a material containing metal or silicon as a target material in the second zone.

Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.

A magnetron plasma apparatus boosted by hollow cathode plasma includes at least one electrically connected pair of a first hollow cathode plate and a second hollow cathode plate placed opposite to each other at a separation distance of at least 0.1 mm and having an opening following an outer edge of a sputter erosion zone on a magnetron target so that a magnetron magnetic field forms a perpendicular magnetic component inside a hollow cathode slit between plates and, wherein the plates and are connected to a first electric power generator together with the magnetron target to generate a magnetically enhanced hollow cathode plasma in at least one of a first working gas distributed in the hollow cathode slit and a second working gas admitted outside the slit in contact with a magnetron plasma generated in at least one of the first working gas and the second working gas.

A gas ring for a PVD-source with a cathode having a target for material deposition. The gas ring includes an inner rim and an outer rim and at least one flange between the inner and the outer rim. The gas ring further includes: —a gas inlet; —gas openings arranged circumferentially in or near the inner rim; —at least one circumferential gas channel connected to the gas inlet and/or the gas openings; —a cooling duct.

A sputtering apparatus includes a placement portion where a target having a first opening is placed, an anode, and a metal member. The anode and the metal member are disposed at positions corresponding to the first opening of the target in the placement portion. The anode and the metal member are electrically insulated from each other. The metal member is set to a ground potential or a floating potential.