The present invention relates to a sputtering target comprising Ni, W and, optionally, one or more further metal(s) X selected from the group of the refractory metals, Sn, Al and Si, which has a normalized peak intensity ratio
PIR=I.sub.Ni/I.sub.W.Math.(A.sub.W+A.sub.x)/A.sub.Ni of 0.40 or greater, wherein I.sub.Ni is the intensity of the (111) peak of Ni, I.sub.W is the intensity of the (110) peak of W, A.sub.w is the fraction of W in the target in atom %, A.sub.x is the total fraction of the one or more further metals selected from the group of the refractory metals, Sn, Al and Si in the target in atom %, A.sub.Ni is the fraction of Ni in the target in atom %, and wherein the intensities of the peaks are determined by X-ray powder diffraction using Cu-K.sub.alpha radiation.

Embodiments of the present disclosure generally relate to composite PVD target. The target has a diameter, a connection face, a substrate face opposite the connection face, a thickness between the connection face and the substrate face, and a material distribution. The material distribution includes a silicon containing material arranged in a pattern, and a titanium containing material arranged in the pattern. The material distribution is uniform at any point along the thickness.

The present invention relates to a method for producing a molybdenum alloy target, and solves the problem of low density and coarser grains of the molybdenum alloy targets in the prior art. The present invention comprises subjecting a mixed powder with a mass ratio depending upon the formula composition of a molybdenum alloy to a pre-press forming process to obtain a preformed molybdenum alloy target blank; placing the preformed molybdenum alloy target blank in a capsule and subjecting the capsule to processes of preheating for degassing and vacuum seal welding; subjecting the target blank to a hot isostatic pressing process to obtain a densified molybdenum alloy prefabricated target; removing the capsule; and subjecting the molybdenum alloy prefabricated target with the capsule removed to a temperature-rising and pressure-decreasing process, followed by finish machining to obtain a molybdenum alloy target.

Disclosed is a negative electrode current collector for an anode-free lithium metal battery. The negative electrode current collector includes a PdTe.sub.2 layer and an intermediate layer to inhibit the growth of lithium dendrite, resulting in significant improves in lifespan and performance of the lithium metal battery. The negative electrode current collector further includes an ion conductive layer to improve the performance of the lithium metal battery.

A gold sputtering target has a gold purity of 99.999% or more. In such a gold sputtering target, an average value of Vickers hardness is 20 or more and less than 40, an average crystal grain size is 15 μm or more and 200 μm or less, and a {110} plane of gold is preferentially oriented to a surface to be sputtered of the gold sputtering target.

Provided is a sputtering target, the sputtering target containing 0.05 at % or more of Bi and having a total content of metal oxides of from 10 vol % to 60 vol %, the balance containing at least Co and Pt.

The present disclosure provides an improvement to razor blade coating by a physical vapor deposition method, by forming a hard coating layer as a thin coating layer in which chromium boride, which is a nanocrystalline structure having high hardness, is dispersed in an amorphous mixture of chromium and boron, thereby improving the strength and hardness of the thin coating layer and securing the bonding force by chromium in the amorphous mixture between the hard coating layer and a blade substrate on which an edge of the razor blade is formed.

A method for forming a film of an oxide of In, Ga, and Zn, having a spinel crystalline phase comprises providing a substrate in a chamber; providing a sputtering target in said chamber, the target comprising an oxide of In, Ga, and Zn, wherein: In, Ga, and Zn represent together at least 95 at % of the elements other than oxygen, In represents from 0.6 to 44 at % of In, Ga, and Zn, Ga represents from 22 to 66 at % of In, Ga, and Zn, and Zn represents from 20 to 46 at % of In, Ga, and Zn; and forming a film on the substrate, the substrate being at a temperature of from 125° C. to 250° C., by sputtering the target with a sputtering gas comprising O.sub.2, the sputtering being performed at a sputtering power of at least 200 W.

A sputtering target according to the present invention contains Co and Pt as metal components, wherein a molar ratio of a content of Pt to a content of Co is from 5/100 to 45/100, and wherein the sputtering target contains Nb.sub.2O.sub.5 as a metal oxide component.

A metal-Si based powder contains a metal-Si based particle including a plurality of crystal phase grains. The crystal phase grains include a crystal phase containing a compound of a metal and Si. The crystal phase grains have an average grain size of, for example, 20 μm or less. The metal-Si based particle has an average particle size of, for example, 5 to 100 μm.