Patent classifications
C23C14/3442
Techniques and apparatus for selective shaping of mask features using angled beams
A method may include providing a set of features in a mask layer, wherein a given feature comprises a first dimension along a first direction, second dimension along a second direction, orthogonal to the first direction, and directing an angled ion beam to a first side region of the set of features in a first exposure, wherein the first side region is etched a first amount along the first direction. The method may include directing an angled deposition beam to a second side region of the set of features in a second exposure, wherein a protective layer is formed on the second side region, the second side region being oriented perpendicularly with respect to the first side region. The method may include directing the angled ion beam to the first side region in a third exposure, wherein the first side region is etched a second amount along the first direction.
Substrate processing apparatus and substrate processing method
A substrate processing apparatus that processes a substrate using particles, includes a conveyance mechanism configured to convey the substrate along a conveyance surface, a particle source configured to emit particles, a rotation mechanism configured to make the particle source pivot about a rotation axis, and a movement mechanism configured to move the particle source such that a distance between the particle source and the conveyance surface is changed.
TECHNIQUES AND APPARATUS FOR SELECTIVE SHAPING OF MASK FEATURES USING ANGLED BEAMS
A method may include providing a set of features in a mask layer, wherein a given feature comprises a first dimension along a first direction, second dimension along a second direction, orthogonal to the first direction, and directing an angled ion beam to a first side region of the set of features in a first exposure, wherein the first side region is etched a first amount along the first direction. The method may include directing an angled deposition beam to a second side region of the set of features in a second exposure, wherein a protective layer is formed on the second side region, the second side region being oriented perpendicularly with respect to the first side region. The method may include directing the angled ion beam to the first side region in a third exposure, wherein the first side region is etched a second amount along the first direction.
Physical vapor deposition apparatus and method thereof
A an apparatus includes a processing chamber configured to house a workpiece, a target holder in the processing chamber, a first magnetic element positioned over a backside of the target holder, a first arm assembly connected to the first magnetic element, a rotational shaft, and a first hinge mechanism connecting the rotational shaft and the first arm assembly.
METHOD FOR DEPOSITING A COATING ON A SUBSTRATE
A method for depositing a coating on a substrate (100), including a step of depositing a thin intermetallic layer (110) on the substrate (100), so as to obtain, at the end of this step, an external part (10) having a predetermined final colour.
HIGH-ENTROPY CARBIDE CERAMIC MATERIAL, CARBIDE CERAMIC COATING AND PREPARATION METHODS AND USE THEREOF
Disclosed are a high-entropy carbide ceramic material and a preparation method thereof, and also a ceramic coating and its preparation method and use. The high-entropy carbide ceramic material has a chemical composition of (ZrCrTiVNb)C and includes Zr, Cr, Ti, V, and Nb, with a same mole fraction of 6-10%.
PHYSICAL VAPOR DEPOSITION APPARATUS AND METHOD THEREOF
A an apparatus includes a processing chamber configured to house a workpiece, a target holder in the processing chamber, a first magnetic element positioned over a backside of the target holder, a first arm assembly connected to the first magnetic element, a rotational shaft, and a first hinge mechanism connecting the rotational shaft and the first arm assembly.
METAL PILLAR DEVICE STRUCTURES AND METHODS FOR MAKING AND USING THEM IN ELECTROCHEMICAL AND/OR ELECTROCATALYTIC APPLICATIONS
The invention disclosed herein includes electrode compositions formed from processes that sputter metal in a manner that produces pillar architectures. Embodiments of the invention can be used in analyte sensors having such electrode architectures as well as methods for making and using these sensor electrodes. A number of working embodiments of the invention are shown to be useful in amperometric glucose sensors worn by diabetic individuals. However, the metal pillar structures have wide ranging applicability and should increase surface area and decrease charge density for catalyst layers or electrodes used with sensing, power generation, recording, and stimulation, in vitro and/or in the body, or outside the body.
Scratch-resistant laminates with retained optical properties
One or more aspects of the disclosure pertain to an article including an optical film structure disposed on an inorganic oxide substrate, which may include a strengthened or non-strengthened substrate that may be amorphous or crystalline, such that the article exhibits scratch resistance and retains the same or improved optical properties as the inorganic oxide substrate, without the optical film structure disposed thereon. In one or more embodiments, the article exhibits an average transmittance of 85% or more, over the visible spectrum (e.g., 380 nm-780 nm). Embodiments of the optical film structure include aluminum-containing oxides, aluminum-containing oxy-nitrides, aluminum-containing nitrides (e.g., AlN) and combinations thereof. The optical film structures disclosed herein also include a transparent dielectric including oxides such as silicon oxide, germanium oxide, aluminum oxide and a combination thereof. Methods of forming such articles are also provided.
Reference electrode assemblies including thin, porous current collectors and methods of manufacturing thin, porous current collectors
A method of manufacturing a component for a reference electrode assembly according to various aspects of the present disclosure includes providing a separator having first and second opposing surfaces. The method further includes sputtering a first current collector layer to the first surface via magnetron or ion beam sputtering deposition. A porosity of the separator is substantially unchanged by the sputtering. In one aspect, the method further includes sputtering a second current collector layer to the second surface via magnetron or ion beam sputtering deposition. In one aspect, the first current collector layer includes nickel and defines a first thickness of greater than or equal to about 200 nm to less than or equal to about 300 nm and the second current collector layer includes gold and defines a second thickness of greater than or equal to about 25 nm to less than or equal to about 100 nm.