Embodiments of process kits are provided herein. In some embodiments, a process kit, includes: a deposition ring configured to be disposed on a substrate support, the deposition ring comprising: an annular band having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion, the step extending downward from the radially inner portion to the radially outer portion; an inner lip extending upwards from the upper surface of the annular band and adjacent an inner surface of the annular band, and wherein an outer surface of the inner lip extends radially outward and downward from an upper surface of the inner lip to the upper surface of the annular band; a channel disposed radially outward of the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.

Embodiments of deposition rings for use in a process chamber are provided herein. In some embodiments, a deposition ring includes: an annular body; an inner wall extending upward from an inner portion of the annular body; and an outer wall extending upward form an outer portion of the annular body to define a large deposition cavity between the inner wall and the outer wall, wherein a width of the large deposition cavity is about 0.35 inches to about 0.60 inches, wherein the outer wall includes an outer ledge and an inner ledge raised with respect to the outer ledge.

A chamber for a physical vapor deposition (PVD) apparatus includes a collimator configured to narrow filter sputtered particles into a beam, an electrostatic chuck configured to support a substrate in the chamber, a shield and a chamber plate. The chamber plate includes a nut plate portion having a plurality of nut plates and a plurality of cavities in the chamber plate that are configured to allow gas to ingress and egress, wherein the cavities and nut plates are provided in equal numbers. The chamber is configured to operate at a target pressure, and the number of nut plates and corresponding number of cavities are determined based on the target pressure.

A physical vapor deposition chamber comprising a tilting substrate support is described. Methods of processing a substrate are also provided comprising tilting at least one of the substrate and the target to improve the uniformity of the layer on the substrate from the center of the substrate to the edge of the substrate. Process controllers are also described which comprise one or more process configurations causing the physical deposition chamber to perform the operations of rotating a substrate support within the physical deposition chamber and tilting the substrate support at a plurality of angles with respect to a horizontal axis.

Systems and methods may be used to produce coated components. Exemplary semiconductor chamber components may include an aluminum alloy comprising nickel and may be characterized by a surface. The surface may include a corrosion resistant coating. The corrosion resistant coating may include a conformal layer and a non-metal layer. The conformal layer may extend about the semiconductor chamber component. The non-metal oxide layer may extend over a surface of the conformal layer. The non-metal oxide layer may be characterized by an amorphous microstructure having a hardness of from about 300 HV to about 10,000 HV. The non-metal oxide layer may also be characterized by an sp.sup.2 to sp.sup.3 hybridization ratio of from about 0.01 to about 0.5 and a hydrogen content of from about 1 wt. % to about 35 wt. %.

A macroparticle filter device for cathodic arc evaporation, to be placed between at least one arc evaporation source and at least one substrate exhibiting at least a surface to be coated with material evaporated from a cathode of the arc evaporation source in a vacuum coating chamber. The macroparticle filter device includes one or more filter components that can prevent macroparticles emitted by the cathode during cathodic arc evaporation to arrive the substrate surface to be coated. The at least one component is provided as one or more flexible sheets that block the lineal way of the macroparticles from the cathode to the substrate surface to be coated. Further a method for utilizing the macroparticle filter device is presented.

Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.

A thin film deposition apparatus comprising: a laser pulse generator to generate a laser pulse; optical elements to optionally P-polarize and optionally rotate the laser pulse polarization with a polarization angle φ based on the cavity chamber and deposition material; focusing optics to focus the laser pulse; a source of deposition material having refractive index n.sub.2; said deposition material mounted within an evacuated chamber having a refractive index n.sub.1; a rotation and / or translation device to alter and / or direct said laser pulse onto said source of deposition material at an incidence angle θ to produce a plasma to be deposited on a substrate; wherein the polarization angle φ and incidence angle θ are defined by the area under the graphical representation of the ellipse of equation

[00001]$\frac{{\left(\theta -{\theta }_0\right)}^2}{a^2}+\frac{{\left(\phi -{\phi }_0\right)}^2}{b^2}=1$

where θ.sub.0=0.8× arctan (n.sub.2/n.sub.1), φ.sub.0=0, a=0.4× arctan (n.sub.2/n.sub.1) and b=0.5× arctan (n.sub.2/n.sub.1).

Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.

A mask includes a protruding portion provided with a deposition hole formed therethrough and including an upper surface, a lower surface facing the upper surface, and a side surface disposed between the upper surface and the lower surface and inclined at an angle with respect to the lower surface, a peripheral portion including a first surface extending from the upper surface, a second surface facing the first surface and having a step difference with respect to the lower surface of the protruding portion, and a coating layer disposed on the protruding portion. The protruding portion includes at least one of a protrusion protruded from the side surface of the protruding portion and a groove formed by removing at least a portion of the protruding portion from the side surface of the protruding portion, and the coating layer covers at least one of the protrusion and the groove.