Patent classifications
C23C16/0263
FORMING LINED COOLING APERTURE(S) IN A TURBINE ENGINE COMPONENT
A manufacturing method is provided. During this method, a preform component is provided for a turbine engine. The preform component includes a substrate. A meter section of a cooling aperture is formed in the substrate. An internal coating is applied onto a surface of the meter section. An external coating is applied over the substrate. A diffuser section of the cooling aperture is formed in the external coating and the substrate to provide the cooling aperture.
Semiconductor chamber coatings and processes
Systems and methods may be used to produce coated components. Exemplary semiconductor chamber components may include an aluminum alloy comprising nickel and may be characterized by a surface. The surface may include a corrosion resistant coating. The corrosion resistant coating may include a conformal layer and a non-metal layer. The conformal layer may extend about the semiconductor chamber component. The non-metal oxide layer may extend over a surface of the conformal layer. The non-metal oxide layer may be characterized by an amorphous microstructure having a hardness of from about 300 HV to about 10,000 HV. The non-metal oxide layer may also be characterized by an sp.sup.2 to sp.sup.3 hybridization ratio of from about 0.01 to about 0.5 and a hydrogen content of from about 1 wt. % to about 35 wt. %.
FORMING LINED COOLING APERTURE(S) IN A TURBINE ENGINE COMPONENT
A manufacturing method is provided. During this method, a preform component is provided for a turbine engine. The preform component includes a substrate. A meter section of a cooling aperture is formed in the substrate. An internal coating is applied onto a surface of the meter section. An external coating is applied over the substrate. A diffuser section of the cooling aperture is formed in the external coating and the substrate to provide the cooling aperture.
FILM FORMATION METHOD AND FILM FORMATION APPARATUS
A film formation method according to one aspect of the present disclosure includes: a first step of irradiating a substrate, on which a recess is formed, with an electron beam; a second step of supplying a raw material gas to the substrate and allowing the raw material gas to be adsorbed on a bottom surface of the recess; and a third step of supplying hydrogen radicals to the substrate and allowing the raw material gas adsorbed on the bottom surface of the recess to react with the hydrogen radicals.
Area selective nanoscale-thin layer deposition via precise functional group lithography
A method of depositing a nanoscale-thin film onto a substrate is disclosed. The method generally comprises depositing a layer of a solid or gaseous state functionalizing molecule onto or adjacent to the first surface of the substrate and exposing the first surface to a source of ionizing radiation, thereby functionalizing the first surface of the substrate. Once the layer of functionalizing molecule is removed, a nanoscale-thin film is then deposited onto the functionalized first surface of the substrate.
SEMICONDUCTOR CHAMBER COATINGS AND PROCESSES
Systems and methods may be used to produce coated components. Exemplary semiconductor chamber components may include an aluminum alloy comprising nickel and may be characterized by a surface. The surface may include a corrosion resistant coating. The corrosion resistant coating may include a conformal layer and a non-metal layer. The conformal layer may extend about the semiconductor chamber component. The non-metal oxide layer may extend over a surface of the conformal layer. The non-metal oxide layer may be characterized by an amorphous microstructure having a hardness of from about 300 HV to about 10,000 HV. The non-metal oxide layer may also be characterized by an sp.sup.2 to sp.sup.3 hybridization ratio of from about 0.01 to about 0.5 and a hydrogen content of from about 1 wt. % to about 35 wt. %.
AREA SELECTIVE NANOSCALE-THIN LAYER DEPOSITION VIA PRECISE FUNCTIONAL GROUP LITHOGRAPHY
A method of depositing a nanoscale-thin film onto a substrate is disclosed. The method generally comprises depositing a layer of a solid or gaseous state functionalizing molecule onto or adjacent to the first surface of the substrate and exposing the first surface to a source of ionizing radiation, thereby functionalizing the first surface of the substrate. Once the layer of functionalizing molecule is removed, a nanoscale-thin film is then deposited onto the functionalized first surface of the substrate.
Forming lined cooling aperture(s) in a turbine engine component
A manufacturing method is provided. During this method, a preform component is provided for a turbine engine. The preform component includes a substrate. A meter section of a cooling aperture is formed in the substrate. An internal coating is applied onto a surface of the meter section. An external coating is applied over the substrate. A diffuser section of the cooling aperture is formed in the external coating and the substrate to provide the cooling aperture.
DISTRIBUTED GAIN POLYGON RING LASER AMPLIFICATION
A distributed gain polygon ring laser system includes a substrate ring, top and bottom cover plates, an input pump laser, an output coupler and a number of reflection points. The substrate ring has inner and outer surfaces. The top and bottom cover plates are configured for vacuum sealing with the substrate ring. The input pump laser is configured to direct light into the substrate ring. The plurality of reflection points are spaced around the inner surface of the substrate ring and are configured to reflect light from the input pump laser to the output coupler in a series of reflections.
AREA SELECTIVE NANOSCALE-THIN LAYER DEPOSITION VIA PRECISE FUNCTIONAL GROUP LITHOGRAPHY
The present disclosure relates to a method of depositing a nanoscale-thin film onto a substrate. The method generally comprises depositing a layer of a solid or gaseous state functionalizing molecule onto or adjacent to the first surface of the substrate and exposing the first surface to a source of ionizing radiation, thereby functionalizing the first surface of the substrate. Once the layer of functionalizing molecule is removed, a nanoscale-thin film is then deposited onto the functionalized first surface of the substrate.