The disclosed technology generally relates to forming a titanium nitride layer, and more particularly to forming by atomic layer deposition a titanium nitride layer on a seed layer. In one aspect, a semiconductor structure comprises a semiconductor substrate comprising a non-metallic surface. The semiconductor structure additionally comprises a seed layer comprising silicon (Si) and nitrogen (N) conformally coating the non-metallic surface and a TiN layer conformally coating the seed layer. Aspects are also directed to methods of forming the semiconductor structures.

An article or vessel is described including a vessel surface and a coating set comprising at least one tie coating, at least one barrier coating, and at least one pH protective coating. For example, the coating set can comprise a tie coating, a barrier coating, a pH protective coating and a second barrier coating; and in the presence of a fluid composition, the fluid contacting surface is the barrier coating or layer. The respective coatings can be applied by PECVD of a polysiloxane precursor. Such vessels can have a coated interior portion containing a fluid with a pH of 4 to 8. The barrier coating prevents oxygen from penetrating into the thermoplastic vessel, and the tie coating and pH protective coating together protect the barrier layer from the contents of the vessel. The second barrier coating is comparable to glass surface if needed.

An epitaxial silicon carbide single crystal wafer having a small depth of shallow pits and having a high quality silicon carbide single crystal thin film and a method for producing the same are provided. The epitaxial silicon carbide single crystal wafer according to the present invention is produced by forming a buffer layer made of a silicon carbide epitaxial film having a thickness of 1 μm or more and 10 μm or less by adjusting the ratio of the number of carbon to that of silicon (C/Si ratio) contained in a silicon-based and carbon-based material gas to 0.5 or more and 1.0 or less, and then by forming a drift layer made of a silicon carbide epitaxial film at a growth rate of 15 μm or more and 100 μm or less per hour. According to the present invention, the depth of the shallow pits observed on the surface of the drift layer can be set at 30 nm or less.

A manufacturing method for a magnetic recording medium which includes a magnetic layer, a lower protective layer, an upper protective layer and a lubricating layer on a substrate, and in which the total film thickness of the lower protective layer and the upper protective layer is 2.5 nm or less, includes: 1) depositing the lower protective layer; 2) performing oxygen plasma treatment on the lower protective layer; 3) depositing the upper protective layer; and 4) performing nitrogen plasma treatment on the upper protective layer. It is preferable that the lower protective layer and the upper protective layer are formed of a carbon-based material, and it is further more preferable that the lower protective layer and the upper protective layer are formed of diamond-like carbon. Moreover, it is preferable that the contact angle of the lower protective layer with respect to water in the atmosphere is 25° or less.

An apparatus for generating energetic particles and application of coatings in a vacuum comprising a plasma duct surrounded by a magnetic deflecting and focusing system communicating with a primary cathodic arc plasma source in a cathode chamber and a distal anode in a coating chamber. A coating chamber comprises a substrate holder off of an optical axis of the plasma source. A set of baffles are installed along the walls of cathode chambers and the plasma duct not occupied with plasma sources and in some embodiments across the plasma stream to trap macroparticles and neutrals. A plasma duct has a deflecting portion with attached cathode chamber and a tunnel portion attached to the coating chamber. The deflecting system comprises a deflecting coil surrounding the cathode chamber having an off-set deflecting conductor spaced from the plasma duct. In one embodiment a magnetron source is magnetically coupled with cathodic arc source.

Provided is a cutting tool including a base material and a coating layer provided on the base material, the coating layer including a titanium carbonitride layer provided on the base material, an intermediate layer provided on the titanium carbonitride layer in contact therewith, and an alumina layer provided on the intermediate layer in contact therewith, the intermediate layer being composed of a compound made of titanium, carbon, oxygen, and nitrogen, the intermediate layer having a thickness of more than 1 μm, when P.sub.N1 atomic % represents an atomic ratio of the nitrogen in an interface between the intermediate layer and the alumina layer, and P.sub.N2 atomic % represents an atomic ratio of the nitrogen at a point A away from the interface by 1 μm on a side of the intermediate layer, a ratio P.sub.N1/P.sub.N2 of the P.sub.N1 to the P.sub.N2 being more than or equal to 1.03.

A method comprises discharging from a metal vaporization device a vapor of a metal or a metal precursor to a chemical vapor infiltration device where the chemical vapor infiltration device is in fluid communication with the metal vaporization device. The chemical vapor infiltration device contains a preform containing ceramic fibers. The preform is infiltrated with a metallic coating or a coating of a metallic precursor along with a ceramic precursor coating. The metallic coating and/or the metallic precursor coating and the ceramic precursor coating are applied sequentially or simultaneously.

Improved thin film coatings, cutting tool materials and processes for cutting tool applications are disclosed. A boron-doped graded diamond thin film for forming a highly adhesive surface coating on a cemented carbide (WC—Co) cutting tool material is provided. The thin film is fabricated in a HFCVD reactor. It is made of a bottom layer of BMCD in contact with a surface layer of the cemented carbide, a top layer made of NCD and a transition layer with a decreasing concentration gradient of boron obtained by changing the reaction conditions through ramp up option in hot filament CVD reactor. The top layer has a low friction coefficient. The bottom layer in the coating substrate interface has better interfacial adhesion through cobalt and boron reactivity and decreased cobalt diffusivity in the diamond. The transition layer has minimized lattice mismatch and sharp stress concentration between the top and bottom layers.

Provided is a semiconductor film having a corundum-type crystal structure composed of α-Ga.sub.2O.sub.3 or an α-Ga.sub.2O.sub.3 solid solution, and an X-ray rocking curve full width at half maximum of a (104) plane on at least one surface of the semiconductor film is 500 arcsec or less.

Provided is a method of manufacturing a silicon carbide epitaxial wafer appropriate for suppressing an occurrence of a triangular defect. A method of manufacturing a silicon carbide epitaxial wafer includes: an etching process of etching a surface of a silicon carbide substrate at a first temperature using etching gas including H.sub.2; a process of flattening processing of flattening the surface etched in the etching process, at a second temperature using gas including H.sub.2 gas, first Si supply gas, and first C supply gas; and an epitaxial layer growth process of performing an epitaxial growth on the surface flattened in the process of flattening processing, at a third temperature using gas including second Si supply gas and second C supply gas, wherein the first temperature T.sub.1, the second temperature T.sub.2, and the third temperature T.sub.3 satisfy T.sub.1>T.sub.2>T.sub.3.