A device including a hard shield material; a layer including aluminum or copper; and a silicon layer having a first thickness is disclosed. The device can also include a silicon layer having a second thickness. A method of making the device is also disclosed.

A device including a hard shield material; a layer including aluminum or copper; and a silicon layer having a first thickness is disclosed. The device can also include a silicon layer having a second thickness. A method of making the device is also disclosed.

In a gas-barrier aluminum deposition film according to one embodiment of the present invention, a seed coating layer containing functional groups of at least one type selected from among a hydroxyl group (—OH), an amine group (—NH), and a carboxylic acid group (—COOH) is formed on a thermoplastic plastic base film to form a seed molecular layer that enables uniform deposition of aluminum, such as AlOx or AlNx, through chemical reaction, on a surface of the coating layer, with aluminum atoms vaporized at the initial stage of aluminum deposition, thereby inducing uniform deposition of an aluminum layer to be subsequently deposited. Therefore, it is possible to provide a deposited film having superior oxygen and water vapor barrier properties compared to existing aluminum deposition films.

A method for coating a component of an aircraft engine with a wear-resistant layer, wherein the component is first coated at least regionally with a nickel- or cobalt-based alloy and subsequently aluminized. Also disclosed is a method for producing a spray powder for producing a wear-resistant layer of a component of an aircraft engine.

An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. The ion source has a solid-state material source having aluminum iodide in a solid form. A solid source vaporizer vaporizes the aluminum iodide, defining gaseous aluminum iodide. An arc chamber forms a plasma from the gaseous aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A water vapor source further introduces water to react residual aluminum iodide to form hydroiodic acid, where the residual aluminum iodide and hydroiodic acid is evacuated from the system.

An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. The ion source has a solid-state material source having aluminum iodide in a solid form. A solid source vaporizer vaporizes the aluminum iodide, defining gaseous aluminum iodide. An arc chamber forms a plasma from the gaseous aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A water vapor source further introduces water to react residual aluminum iodide to form hydroiodic acid, where the residual aluminum iodide and hydroiodic acid is evacuated from the system.

Described herein is a process for preparing inorganic metal-containing films including bringing a solid substrate in contact with a compound of general formula (I) or (II) in the gaseous state ##STR00001## where A is NR.sub.2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 1, 2 or 3, and R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, wherein if n is 2 and E is NR or A is OR, at least one R in NR or OR bears no hydrogen atom in the 1-position.

Described herein is a process for preparing inorganic metal-containing films including bringing a solid substrate in contact with a compound of general formula (I) or (II) in the gaseous state ##STR00001## where A is NR.sub.2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 1, 2 or 3, and R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, wherein if n is 2 and E is NR or A is OR, at least one R in NR or OR bears no hydrogen atom in the 1-position.

A nanoscale plate structure includes base plates and rib plates with nanoscale thickness and macroscopic lateral dimensions. The base plate resides in the first plane, the ribs can reside out-of-plane and form at least one strengthening rib, and additional base plates can reside in planes parallel to the first plane. The strengthening rib can be patterned such that there is no straight line path extending through a lateral dimension of the plate structure that does not intersect the at least one base plate and the at least one strengthening rib. The plates and ribs used in the structure have a thickness between about 1 nm and about 100 nm. The plate structures can be fabricated using a conformal deposition method including atomic layer deposition.

A nanoscale plate structure includes base plates and rib plates with nanoscale thickness and macroscopic lateral dimensions. The base plate resides in the first plane, the ribs can reside out-of-plane and form at least one strengthening rib, and additional base plates can reside in planes parallel to the first plane. The strengthening rib can be patterned such that there is no straight line path extending through a lateral dimension of the plate structure that does not intersect the at least one base plate and the at least one strengthening rib. The plates and ribs used in the structure have a thickness between about 1 nm and about 100 nm. The plate structures can be fabricated using a conformal deposition method including atomic layer deposition.