Methods of forming ruthenium-containing films by atomic layer deposition and/or chemical vapor deposition are provided. The methods include a first step of forming a first film on a surface of the substrate and a second step of forming the ruthenium-containing film on at least a portion of the first film. The first step includes delivering a titanium precursor and a first nitrogen-containing co-reactant to the substrate and delivering a first ruthenium precursor and a second nitrogen-containing co-reactant to the substrate to form the first film. The second step includes delivering a second ruthenium precursor and a third co-reactant to the substrate. Ruthenium-containing films are also provided.

The present invention is in the field of processes for preparing inorganic metal- or semimetal-containing films. The process for preparing inorganic metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with a compound of general formula (I) or (II) wherein Z is NR.sub.2, PR.sub.2, OR, SR, CR.sub.2, SiR.sub.2, X is H, R′ or NR′.sub.2, wherein at least one X is H, n is 1 or 2, and R and R′ is an alkyl group, an alkenyl group, an aryl group, or a silyl group.

##STR00001##

The present invention is in the field of processes for preparing inorganic metal- or semimetal-containing films. The process for preparing inorganic metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with a compound of general formula (I) or (II) wherein Z is NR.sub.2, PR.sub.2, OR, SR, CR.sub.2, SiR.sub.2, X is H, R′ or NR′.sub.2, wherein at least one X is H, n is 1 or 2, and R and R′ is an alkyl group, an alkenyl group, an aryl group, or a silyl group.

##STR00001##

Provided is a method of producing a copper-containing layer, including: step 1: a step of reducing a surface of a substrate, provided that a substrate having a surface formed of a silicic acid compound is excluded, through use of a reducing agent; and step 2: a step of forming a copper-containing layer on the surface having been reduced in the step 1 through use of a thin-film forming raw material containing a copper compound by a plasma atomic layer deposition method.

Provided is a method of producing a copper-containing layer, including: step 1: a step of reducing a surface of a substrate, provided that a substrate having a surface formed of a silicic acid compound is excluded, through use of a reducing agent; and step 2: a step of forming a copper-containing layer on the surface having been reduced in the step 1 through use of a thin-film forming raw material containing a copper compound by a plasma atomic layer deposition method.

The present invention provides a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following general formula (1): ##STR00001##
where R.sup.1 to R.sup.4 each independently represent an alkyl group having 1 to 5 carbon atoms, and A.sup.1 represents an alkanediyl group having 1 to 5 carbon atoms.

The present invention provides a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following general formula (1): ##STR00001##
where R.sup.1 to R.sup.4 each independently represent an alkyl group having 1 to 5 carbon atoms, and A.sup.1 represents an alkanediyl group having 1 to 5 carbon atoms.

The present invention provides a tin compound represented by the following general formula (1) (in the formula (1), R.sup.1 to R.sup.4 each independently represent a hydrogen atom or an alkyl group having 1 to 12 carbon atoms, and R.sup.5 represents an alkanediyl group having 1 to 15 carbon atoms), a thin-film forming raw material including the compound, a thin-film formed by using the thin-film forming raw material, a method of using the compound as a precursor for producing the thin-film, and a method of producing a thin-film including: introducing a raw material gas obtained by vaporizing the thin-film forming raw material into a treatment atmosphere having a substrate set therein; and subjecting the tin compound in the raw material gas to decomposition and/or a chemical reaction in the treatment atmosphere, to thereby produce a thin-film containing a tin atom on a surface of the substrate.

##STR00001##

The present invention provides a tin compound represented by the following general formula (1) (in the formula (1), R.sup.1 to R.sup.4 each independently represent a hydrogen atom or an alkyl group having 1 to 12 carbon atoms, and R.sup.5 represents an alkanediyl group having 1 to 15 carbon atoms), a thin-film forming raw material including the compound, a thin-film formed by using the thin-film forming raw material, a method of using the compound as a precursor for producing the thin-film, and a method of producing a thin-film including: introducing a raw material gas obtained by vaporizing the thin-film forming raw material into a treatment atmosphere having a substrate set therein; and subjecting the tin compound in the raw material gas to decomposition and/or a chemical reaction in the treatment atmosphere, to thereby produce a thin-film containing a tin atom on a surface of the substrate.

##STR00001##

A vaporization supply device includes a vaporizer for heating and vaporizing a liquid raw material L, a flow rate controller for controlling a flow rate of the gas supplied from the vaporizer to a gas supply destination, and a controller for heating the inside of the vaporizer to obtain a necessary gas flow rate, and performing a feedback control so that a pressure becomes equal to or higher than a predetermined value. The controller is configured so as to stop the feedback control at the time point when the flow rate control by the flow rate controller starts, then heat the liquid raw material by an amount of heat provided to the vaporizer more than the heat that has already been provided immediately before the feedback control ends, and change to the feedback control after a predetermined time has elapsed from the time point when the flow rate control by the flow rate controller starts.