Provided in the present disclosure are a coating apparatus and an application thereof, being used for coating on the surface of a substrate, the coating apparatus comprises a feeding device and a device main body, wherein the feeding device is configured to communicate with the apparatus device main body, the feeding device comprises a gas feeding device and a liquid feeding device, the gas feeding device is in communication with the device main body and is used for transmitting a gaseous gas raw material to the device main body, the liquid feeding device is in communication with the device main body and is used for transmitting a liquid gasified gas raw material to the device main body, the device main body is used for preparing a thin film based on the gas raw material, and the same coating apparatus can be used for preparing various thin films or film layers with different properties or of different types on the surface of the substrate.

A surface treatment for a metal substrate includes a nitride layer and a diamond-like carbon coating on said nitride layer. The metal substrate can be a titanium-containing substrate. The nitride layer and diamond-like carbon coating serve to improve the tribological properties of the metal substrate.

A surface treatment for a metal substrate includes a nitride layer and a diamond-like carbon coating on said nitride layer. The metal substrate can be a titanium-containing substrate. The nitride layer and diamond-like carbon coating serve to improve the tribological properties of the metal substrate.

A coated tool includes a base body and a diamond coating. The coated tool has a cutting edge. The first surface comprises a first region close to the cutting edge and a second region further away from the cutting edge than the first region. The diamond coating comprises an outer surface having dome-shaped protrusions. The protrusions include first protrusions having an equivalent circle diameter of 6 .Math.m or more located in the first region, and second protrusions having an equivalent circle diameter of 6 .Math.m or more located in the second region. A number of the first protrusions per 1 mm.sup.2 is a first protrusion number. A number of the second protrusions per 1 mm.sup.2 is a second protrusion number. The first protrusion number is 30 or less, and the second protrusion number is larger than the first protrusion number.

Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a mild plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich weak plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a strong plasma to form a nanocrystalline diamond film.

The invention relates to a method for manufacturing an electroacoustic resonator comprising the steps of: Providing a first substrate having a first side and an opposite second side; depositing a diamond layer having a first side and an opposite second side on said first substrate, wherein the second side of the diamond layer is in contact with said first side of the first substrate; removing the first substrate; forming a piezoelectric layer on the second side of the diamond layer; applying a second substrate to the first side of the diamond layer.

A tool such as a wafer handler or wafer chuck can include a surface having at least one protrusion. A diamond coating is formed from diamond grains sized so that 90% of the grains are between 200 and 300 nanometers, with the diamond coating being deposited on the surface at a temperature below 500 degrees Celsius over the at least one protrusion. Dopants can be used to provide electrical conductivity needed for electrostatic wafer chuck.

A tool such as a wafer handler or wafer chuck can include a surface having at least one protrusion. A diamond coating is formed from diamond grains sized so that 90% of the grains are between 200 and 300 nanometers, with the diamond coating being deposited on the surface at a temperature below 500 degrees Celsius over the at least one protrusion. Dopants can be used to provide electrical conductivity needed for electrostatic wafer chuck.

A multi-layer coating on an outer surface of a substrate includes a first layer applied directly to the outer surface of the substrate. The first layer includes diamond-like carbon (DLC) configured to mitigate metal whisker formation. A second layer is applied on a top surface of the first layer. The second layer is a conformal coating that includes a second material configured to bind to the top surface of the first layer and fill any microfractures that may form in the first layer. Optionally, a third layer is applied on a top surface of the second layer and includes DLC configured to protect the second layer from oxidation and degradation.

The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated tuning and process control methods that enable the microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond. Related methods enable the control of the microwave discharge position, size and shape, and enable efficient matching of the incident microwave power into the reactor prior to and during component deposition. Pre-deposition tuning processes provide a well matched reactor exhibiting a high plasma reactor coupling efficiency over a wide range of operating conditions, thus allowing operational input parameters to be modified during deposition while simultaneously maintaining the reactor in a well-matched state. Additional processes are directed to realtime process control during deposition, in particular based on identified independent process variables which can effectively control desired dependent process variables during deposition while still maintaining a well-matched power coupling reactor state.