A reactor system comprises a process chamber, a gas inlet, and a dispenser. The dispenser is coupled to the gas inlet. The dispenser controls a gas flow from a vial to the gas inlet. The vial includes a coating material that, when released inside the process chamber under operating conditions of the reaction system, coats an inner wall of the process chamber.

The present invention relates to a component for manufacturing a semiconductor manufactured by using a CVD method. A SiC structure formed by the CVD method according to one aspect of the present invention is used such that the SiC structure is exposed to plasma inside a chamber, wherein the SiC structure comprises a crystal grain structure in which the length in a first direction is longer than the length in a second direction when defining a direction perpendicular to the surface most exposed to the plasma as the first direction and a direction horizontal to the surface most exposed to the plasma as the second direction.

A method of producing an epitaxial silicon wafer, including: loading a wafer into a chamber; performing epitaxial growth; unloading the epitaxial silicon wafer from the chamber; and then cleaning the inside of the chamber using hydrochloric gas. After the cleaning is performed, whether components provided in the chamber are to be replaced or not is determined based on the cumulative amount of the hydrochloric gas supplied. The components have a base material that includes graphite and is coated with a silicon carbide film.

Processing methods and apparatus for depositing a protective layer on internal surfaces of a reaction chamber are provided. One method may include depositing, while no wafers are present in the reaction chamber having interior surfaces, a first layer of protective material onto the interior surfaces, the interior surfaces comprising a first material, processing, after the depositing the first layer, a portion of a batch of wafers within a reaction chamber, measuring an amount of the first material in the reaction chamber during processing the portion of the batch of wafers, or on one of the wafers in the portion of the batch of wafers, determining that the first amount exceeds a threshold, and depositing, in response to determining that the first amount exceeds the threshold and while no wafers are present in the reaction chamber, a second layer of protective material onto the interior surfaces of the reaction chamber.

Disclosed herein is a method for producing a film of mixed yttrium and hafnium oxides, nitrides or fluorides on a substrate by an atomic layer deposition process. The process includes providing a reaction chamber containing a substrate, pulsing into the chamber an yttrium source reactant; purging the chamber with a purging material; pulsing into the chamber a co-reactant precursor; purging the chamber with a purging material (first subcycle); pulsing into the chamber a hafnium source reactant; purging the chamber with a purging material; pulsing into the chamber a co-reactant precursor; urging the chamber with a purging material (second subcycle). Each subcycle may be repeated multiple times in a super cycle.

Systems and methods may be used to produce coated components. Exemplary semiconductor chamber components may include an aluminum alloy comprising nickel and may be characterized by a surface. The surface may include a corrosion resistant coating. The corrosion resistant coating may include a conformal layer and a non-metal layer. The conformal layer may extend about the semiconductor chamber component. The non-metal oxide layer may extend over a surface of the conformal layer. The non-metal oxide layer may be characterized by an amorphous microstructure having a hardness of from about 300 HV to about 10,000 HV. The non-metal oxide layer may also be characterized by an sp.sup.2 to sp.sup.3 hybridization ratio of from about 0.01 to about 0.5 and a hydrogen content of from about 1 wt. % to about 35 wt. %.

Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

A high-temperature component made of a refractory metal or a refractory metal alloy, includes a coating for increasing thermal emissivity. The coating is formed substantially of tungsten and rhenium, i.e. of at least 55 wt. % rhenium and at least 10 wt. % tungsten, and has a Re3W phase of at least 35 wt. %. A process for producing a high-temperature component having a coating for increasing thermal emissivity, is also provided.

Methods and apparatuses are provided herein for oxidizing an annular edge region of a substrate. A method may include providing the substrate to a substrate holder in a semiconductor processing chamber, the semiconductor processing chamber having a showerbead positioned above the substrate holder, and simultaneously flowing, while the substrate is supported by the substrate holder, (a) an oxidizing gas around a periphery of the substrate and (b) an inert gas that does not include oxygen through the showerhead and onto the substrate, thereby creating an annular gas region over an annular edge region of the substrate and an interior gas region over on an interior region of the substrate; the simultaneous flowing is not during a deposition of a material onto the substrate, and the annular gas region has an oxidization rate higher than the interior gas region.

Deposition methods and apparatus for conditioning a process kit to increase process kit lifetime are described. A nitride film formed on a process kit is exposed to conditioning process comprising nitrogen and hydrogen radicals to condition the nitride film to decrease particulate contamination from the process kit.