A method of manufacturing a display device in a chamber in which a material including yttrium is coated on an inner surface includes: forming a first layer pattern by dry etching on a substrate; depositing a second layer material on the first layer pattern; forming a photoresist pattern on the second layer material; completing a second layer pattern by using the photoresist pattern as an etch mask; and performing an additional acid etching process by using an etching solution including at least one of hydrochloric acid, sulfuric acid, or nitric acid before the forming of the photoresist pattern on the second layer material after the dry etching to form the first layer pattern.

Embodiments of a methods and cleaning systems for cleaning components for use in substrate processing equipment are provided herein. In some embodiments, a cleaning system includes a boiler having a heater configured to heat a fluid; a clean chamber fluidly coupled to the boiler via at least one of a gas line and a liquid line, wherein the clean chamber includes one or more fixtures in an interior volume therein for holding at least one component to be cleaned, and wherein the clean chamber includes a heater for heating the interior volume; and an expansion chamber fluidly coupled to the clean chamber via a release line for evacuating the clean chamber, wherein the release line includes a release valve to selectively open or close a flow path between the expansion chamber and the clean chamber, and wherein the expansion chamber includes a chiller and a vacuum port.

Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

A component, a method of manufacturing a component, and a method of cleaning a component is provided. The component includes a gas flow system within the component, wherein the gas flow system fluidly couples one or more inlet holes and one or more outlet holes. The manufacturing of the component results in an arc shaped groove and a circumferential groove created in the body of the ring. The component undergoes one or more cleaning operations, including rinsing, baking, or purging operations. The cleaning operations remove debris or particles in or on the component, where the debris or particles can be caused during manufacturing of the component, or during use of the component in a semiconductor processing system.

According to one aspect of the present disclosure, a vacuum processing apparatus includes: a decompressable process container; a supply port that is formed on a side wall of the process container and that is configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container.

A cleaning method that removes contaminants adhering to a stage in a chamber, includes: setting a pressure in a chamber to a predetermined vacuum pressure; supplying a first gas that forms a shock wave toward the stage; and supplying a second gas that does not form the shock wave toward the stage.

Systems and methods for cleaning a showerhead are described. One of the systems includes a support section and a press plate located above the support section to be supported by the support section. The system further includes a cleaning layer located above the press plate. The cleaning layer moves to clean a showerhead. The support section contacts an arm of a spindle assembly for movement with movement of the arm.

Exemplary semiconductor processing methods may include forming a seasoning film on a heater of a processing chamber by a first deposition process. The method may include performing a hardmask deposition process in the processing chamber. The method may include cleaning the processing chamber by a first cleaning process. The method may include monitoring a gas produced during the first cleaning process. The method may include cleaning the processing chamber using a second cleaning process different from the first cleaning process. The method may also include monitoring the gas produced during the second cleaning process.

A cleaning assembly may include a chuck. The cleaning assembly may include a plurality of lift pins positioned proximate to the chuck. The plurality of lift pins may be configured to engage a cleaning substrate and translate the cleaning substrate to allow the cleaning substrate to capture one or more particles from the surface of the chuck via at least one of electrostatic attraction or mechanical trapping when the cleaning substrate is positioned in the second position. The cleaning assembly may include a replaceable top skin coupled to the chuck and configured to capture the one or more particles.

The present disclosure provides a powder-atomic-layer-deposition device with knocker, which mainly includes a vacuum chamber, a shaft seal, a drive unit and a knocker. The drive unit is connected to the rear wall of the vacuum chamber via the shaft seal, for driving the vacuum chamber to rotate. The shaft seal includes an outer tube and an inner tube, wherein the inner tube is disposed within the containing space of the outer tube. The inner tube is disposed with a gas-extracting pipeline and a gas-inlet pipeline therein, wherein the gas-extracting pipeline is for gas extraction of the vacuum chamber, the gas-inlet pipeline is for transferring a precursor gas into the vacuum chamber. The knocker and the vacuum chamber are adjacent to each other, for knocking the vacuum chamber to prevent powders within the reacting space from sticking to the inner surface of the vacuum chamber.