One or more embodiments described herein generally relate to methods and systems for forming films on substrates in semiconductor processes. In embodiments described herein, process chamber is provided that includes a lid plate having a plurality of cooling channels formed therein, a pedestal, the pedestal having a plurality of cooling channels formed therein, and a showerhead, wherein the showerhead comprises a plurality of segments and each segment is at least partially surrounded by a shield.

A reflector includes a reflector body arranged to overlap a reaction chamber of a semiconductor processing system. The reflector body has a grooved surface and a reflective surface extending between a first longitudinal edge of the reflector body and a second longitudinal edge of the reflector body, the reflective surface spaced apart from the grooved surface by a thickness of the reflector body. The grooved surface and the reflective surface define a pyrometer port, two or more elongated slots, and two or more shortened extending through the thickness of the reflector body. The shortened slots outnumber the elongated slots to bias issue of a coolant against the reaction chamber toward the second longitudinal edge of the reflector body. Cooling kits, semiconductor processing systems, and methods of cooling a reaction chamber during deposition of a film onto a substrate supported within the reaction chamber are also described.

A substrate processing apparatus includes a processing vessel; a placing table provided within the processing vessel and configured to place a substrate thereon; and a component disposed between the processing vessel and the placing table, the component constituting an anode. The component has a flow path through which a heat exchange medium flows.

A film forming apparatus and a film forming apparatus usage. The film forming apparatus has a film forming chamber, a substrate retaining part, a heating unit, a shower head, and a physical characteristics detector. The physical characteristics detector includes an irradiation part that irradiates a film formed on a surface of a substrate with a beam, a receiver to receive the beam reflected by the film, and a detection unit that detects physical characteristics of the film based on the beam received by the receiver. The shower head includes a supply plane facing the film forming plane, multiple discharge outlets provided in the supply plane, a main body to transport source gas to the multiple discharge outlets, a first transmissive part that transmits the beam emitted by the irradiation part, and a second transmissive part that transmits the reflected beam and is located at a different position than the first transmissive part.

A method is provided and includes: determining a temperature distribution pattern across a substrate or a support plate of a substrate support; determining, based on the temperature distribution pattern, a number of masks to apply to a top surface of the support plate, where the number of masks is greater than or equal to two; and determining patterns of the masks based on the temperature distribution pattern; and applying the masks over the top surface. The method further includes: performing a first machining process to remove a portion of the support plate unprotected by the masks to form first mesas and first recessed areas between the first mesas; removing a first mask from the support plate; performing a second machining process to form second recessed areas and at least one of second mesas or a first seal band area; and removing a second mask from the support plate.

Siemens process rod growth is controlled by measuring rod diameter by a measuring system A and measuring rod temperature by a measuring system B, the two measuring systems located at different positions outside the reactor.

The present disclosure relates to a support ring for a thermal processing chamber. The support ring has a polysilicon coating. The polysilicon coating is formed using a plasma spray deposition process.

The present disclosure generally relates to an epitaxial chamber for processing of semiconductor substrates. In one example, the epitaxial chamber has a chamber body assembly. The chamber body assembly includes a lower window and an upper window, wherein chamber body assembly, the lower window and the upper window enclose an internal volume. A susceptor assembly is disposed in the internal volume. The epitaxial chamber also has a plurality of temperature control elements. The plurality of temperature control elements include one or more of an upper lamp module, a lower lamp module, an upper heater, a lower heater, or a heated gas passage.

The present disclosure relates to an apparatus for trapping multiple reaction by-products for a semiconductor process, in which in order to separate, with the single trapping apparatus, reaction by-product mixtures contained in unreacted gases discharged after a process of depositing multiple different thin film layers is performed in a process chamber during a semiconductor manufacturing process, a trapping region division part is provided, which divides a heat distribution region into trapping regions for respective reaction by-products while controlling a flow in a movement direction of an introduced unreacted gas, thereby trapping a reaction by-product aggregated in the form of a thin film in a relatively high-temperature region by using a first internal trapping tower in a front region, and trapping a reaction by-product aggregated in the form of powder in a relatively low-temperature region by using a second internal trapping tower in a rear region.

There is provided a technique that includes abnormality detecting by picking up a sound generated from a transfer configured to be capable of transporting the substrate and comparing a waveform of sound data with a preset threshold value to detect an abnormality of the transfer; and failure detecting by picking up vibration of the transfer and comparing a waveform of vibration data with a preset threshold value to detect a failure of the transfer.