A film forming apparatus includes a stage on which a substrate is mounted, a first container configured to accommodate the stage, a gas supply configured to supply gases containing two types of monomers into the first container to form a polymer film on the substrate mounted on the stage, a porous member arranged radially outward from a processing space, which is a space above the substrate, and configured to draw in polymers formed by the gases containing two types of monomers exhausted from the first container, and a heater configured to heat the porous member to a first temperature when the polymer film is formed on the substrate.

Provided is a system for stabilizing a flow of gas introduced into a sensor, wherein, in connection with manufacturing equipment comprising a process chamber, a process chamber vacuum pump installed to remove internal gas of the process chamber, and a sensor device configured to be able to receive the internal gas of the process chamber through a sensor connecting pipe and to detect components thereof, the system comprises a sensor connecting pipe and a bypass pipe branching off from the sensor connecting pipe such that a part of the gas can be directly discharged to the outside without being introduced into the sensor, and the system is accordingly configured to stably provide the sensor device with a part of the internal gas within a predetermined range per time, regardless of a change in the pressure state of the process chamber.

There is provided a shower head disposed in a processing container where a substrate is accommodated and configured to discharge a gas to the substrate in a shower pattern, comprising: a main body portion having a facing surface facing a stage disposed in the processing container to place the substrate thereon; a covering section that covers a surface formed on an opposite side of the facing surface of the main body portion, and forms, between the surface and the covering section, an exhaust space that is exhausted by an exhaust mechanism; a plurality of exhaust hole forming regions disposed on the facing surface apart from each other and each having a plurality of exhaust holes; a plurality of discharge holes disposed for each of the exhaust hole forming regions on the facing surface to surround each of the plurality of exhaust hole forming regions and configured to discharge the gas; a diffusion space disposed to be shared by the plurality of discharge holes, where the gas supplied to the main body portion is diffused to be supplied to each of the plurality of discharge holes; and an exhaust path disposed in the main body portion to be connected to the exhaust holes and opened to the exhaust space in order to exhaust the gas discharged from the discharge holes into the exhaust space.

A discharge method includes discharging discharge products including a first discharge gas and solid by-products from a process chamber, in which a substrate processing process is performed in a vacuum state, into an inside of a collection device, collecting the solid by-products in the collection device, introducing a portion of a second discharge gas discharged from a load lock chamber into the collection device, and vaporizing the solid by-products in the collection device and discharging vaporized solid by-products to an outside of the collection device.

The disclosure relates to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one substrate; a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated; a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated; a removal flow path to allow removal of gas from the reaction chamber; a removal flow controller to create a gas flow in the reaction chamber to the removal flow path when the removal flow controller is activated; and, a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.

A gas processing apparatus includes: a mounting part; a gas supply part located above the mounting part and having a plurality of first gas supply holes; a gas supply path forming part configured to form a supply path of a processing gas, the gas supply path forming part including a flat opposing surface which faces the gas supply part from above and defines a first diffusion space for diffusing the processing gas in a lateral direction; a recess surrounding a central portion of the opposing surface; and a plurality of gas dispersion portions located in the recess surrounding the central portion of the opposing surface without protruding from the opposing surface, each of the plurality of gas dispersion portions having a plurality of gas discharge holes extending along a circumferential direction so as to laterally disperse the processing gas supplied from the supply path in the first diffusion space.

A film-forming apparatus for forming a predetermined film on a substrate by plasma ALD includes a chamber, a stage, a shower head having an upper electrode and a shower plate insulated from the upper electrode, a first high-frequency power supply connected to the upper electrode, and a second high-frequency power supply connected to an electrode contained in the stage. A high-frequency power is supplied from the first high-frequency power supply to the upper electrode, thereby forming a high-frequency electric field between the upper electrode and the shower plate and generating a first capacitively coupled plasma. A high-frequency power is supplied from the second high-frequency power supply to the electrode, thereby forming a high-frequency electric field between the shower plate and the electrode in the stage and generating a second capacitively coupled plasma that is independent from the first capacitively coupled plasma.

A carbon nanotube (CNT) growth apparatus includes: a body; an inlet cap; an outlet cap; insulation extending through a portion of an interior of the body, the insulation including a first stage and a second stage, a flow tube extending through the inlet cap and passing coaxially through the first stage of the insulation, the flow tube configured to receive and flow a fluid to the interior of the body; a gas heater including a plurality of heat pipes configured to be inserted in the first stage of the insulation, the plurality of heat pipes being disposed adjacent to the flow tube; a substrate heater incorporated in the second stage of the insulation; and a temperature controller configured to adjust a temperature of the gas heater and substrate heater, wherein a removed portion of the second stage is configured to provide an unobstructed view of the substrate.

A semiconductor processing tool performs passivation layer deposition and removal in situ. A transport mechanism included in the semiconductor processing tool transfers a semiconductor structure through different deposition chambers (e.g., without breaking or removing a vacuum environment). Accordingly, the semiconductor processing tool deposits a target layer that is thinner on, or even absent from, a metal layer, such that contact resistance is reduced between a conductive structure formed over the target layer and the metal layer. As a result, electrical performance of a device including the conductive structure is improved. Moreover, because the process is performed in situ (e.g., without breaking or removing the vacuum) in the semiconductor processing tool, production time and risk of impurities in the conductive structure are reduced. As a result, throughput is increased, and chances of spoiled wafers are decreased.

The present disclosure relates to an apparatus for trapping a reaction by-products produced during an organic film deposition process, and an object of the present disclosure is to provide a trapping apparatus having an internal trapping tower in which disc-type trapping units, which each have structure-type trapping plates having a large surface area per unit area in order to trap reaction by-products contained in an unreacted gas introduced into the trapping apparatus after an organic film deposition process, among semiconductor manufacturing processes, is performed in the process chamber, and a trapping disc configured to concentrate a flow of the gas or disperse or discharge the gas, are vertically arranged in multiple layers, such that the trapping apparatus traps the reaction by-products in the form of a thin film in a state in which the residence time of the gas is increased and uniform temperature distribution is maintained.