Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port an outlet port, a manifold having a serpentine base creating a tortuous flow path and a filter media assembly in a bottom-fed configuration. The torturous flow path is defined by a plurality of elongate walls and a plurality of openings of the serpentine base ampoule, through which a carrier gas flows in contact with the precursor.

A raw material gas supply system that supplies a raw material gas generated by vaporizing a solid raw material to a processing apparatus includes: a vaporizer configured to vaporize the solid raw material to generate the raw material gas; a delivery mechanism configured to deliver a solution, in which the solid raw material is dissolved in a solvent, from a solution source storing the solution to the vaporizer; and an evaporation mechanism configured to evaporate the solvent of the solution delivered from the delivery mechanism and accommodated in the vaporizer to separate the solid raw material.

Provided is a compound represented by the following general formula (1) or (2):

##STR00001##

where R.sup.1 to R.sup.4 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or the like, R.sup.5 and R.sup.6 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, M.sup.1 represents a gallium atom or an indium atom;

##STR00002##

where R.sup.7 to R.sup.10 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or the like, R.sup.11 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and M.sup.2 represents a gallium atom or an indium atom.

In order to inhibit overshoot in the concentration of a source gas immediately after a gas supply period starts, there is provided a vaporization device that is equipped with a vaporization tank that holds a liquid or a solid source, a carrier gas supply path that supplies carrier gas to the vaporization tank, a source gas extraction path along which flows a source gas which is obtained by vaporizing the source and which is extracted from the vaporization tank, a concentration monitor that is provided on the source gas extraction path, and a concentration control mechanism that is provided with a fluid controller which controls a concentration of the source gas extracted from the source gas extraction path. This vaporization device alternates between supplying the source gas and stopping the supply of the source gas.

A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.

A substrate processing apparatus includes: a chamber; a raw material tank in which a raw material of a processing gas is accommodated; a carrier gas supply unit that supplies a carrier gas to the raw material tank; a mixed gas flow path connected to the raw material tank, and through which a mixed gas of the processing gas obtained from the raw material of the processing gas and the carrier gas flows therethrough; a concentration tank connected to a downstream of the mixed gas flow path, accommodating a porous member including a metal-organic framework; a desorption mechanism that desorbs the processing gas adsorbed to the porous member; and a concentration gas flow path that allows the processing gas desorbed from the porous member to flow to the chamber.

A semiconductor apparatus capable of reducing the leakage current in the reverse direction, and keeping characteristics thereof, even when using n type semiconductor (gallium oxide, for example) or the like having a low-loss at a high voltage and having much higher dielectric breakdown electric field strength than SiC is provided. A semiconductor apparatus includes a crystalline oxide semiconductor having a corundum structure as a main component, and an electric field shield layer and a gate electrode that are respectively laminated directly or through other layers on the n type semiconductor layer, wherein the electric field shield layer includes a p type oxide semiconductor, and is embedded in the n type semiconductor layer deeper than the gate electrode.

Methods and systems for forming films on substrates in semiconductor processes are disclosed. The method includes providing different materials each contained in separate ampoules. Material is flowed from each ampoule into a separate portion of a showerhead contained within a process chamber via a heated gas line. From the showerhead, each material is flowed on to a substrate that sits on the surface of a rotating pedestal. Controlling the mass flow rate out of the showerhead and the rotation rate of the pedestal helps result in films with desirable material domain sizes to be deposited on the substrate.

Bottom-fed ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules comprise an outer cylindrical wall and an inner cylindrical wall defining a flow channel in between and a bottom wall having a top surface with a plurality of concentric elongate walls, each wall comprising an opening offset from the opening in adjacent walls defining a gas exchange zone through which a carrier gas flows in contact with the precursor.

A semiconductor processing system is provided to form a capacitor dielectric layer in a metal-insulator-metal capacitor. The semiconductor processing system includes a precursor tank configured to generate a precursor gas from a metal organic solid precursor, a processing chamber configured to perform a plasma enhanced chemical vapor deposition, and at least one buffer tank between the precursor tank and the processing chamber. The at least one buffer tank is coupled to the precursor tank via a first pipe and coupled to the processing chamber via a second pipe.