Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The ampoules comprise an inlet plenum located between the inlet port and the cavity and an outlet plenum located between the outlet port and the cavity. A flow path is defined by a plurality of tubular walls and an ingress openings of the ampoule, through which a carrier gas flows in contact with the precursor.

The disclosure relates to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one substrate; a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated; a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated; a removal flow path to allow removal of gas from the reaction chamber; a removal flow controller to create a gas flow in the reaction chamber to the removal flow path when the removal flow controller is activated; and, a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.

The present invention relates to coating glass for architectural or automotive use, either monolithic or laminated, having solar control properties. The coating consists of several layers of different metal oxide semiconductors (TiO.sub.2, ZnO, ZrO.sub.2, SnO.sub.2, Al.sub.2O.sub.3) and a layer of metallic nanoparticles, which when superimposed on a pre-established order give the glass solar control properties. In particular the use of protective layers of n-type semiconductors around the metallic nanoparticles layer. It also relates to the method for obtaining the coating by means of the aerosol-assisted chemical vapor deposition technique, using precursor solutions containing an organic or inorganic salt (acetates, acetylacetonates, halides, nitrates) of the applicable elements and an appropriate solvent (water, alcohol, acetone, acetylacetone, etc.). The synthesis is performed at a temperature between 100 and 600° C. depending on the material to be deposited. A nebulizer converts the precursor solution into an aerosol which is submitted with a gas to the substrate surface, where due to the temperature the thermal decomposition of the precursor occurs and the deposition of each layer of the coating occurs.

A film formation method includes (A) to (C) below. (A) Providing a substrate including, on a surface of the substrate, a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed. (B) Supplying, to the surface of the substrate, vapor of a solution that contains a raw material of a self-assembled monolayer and a solvent by which the raw material is dissolved, and selectively forming a self-assembled monolayer in the first region. (C) Forming a desired target film in the second region by using the self-assembled monolayer formed in the first region.

A film formation method includes (A) to (C) below. (A) Providing a substrate including, on a surface of the substrate, a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed. (B) Supplying, to the surface of the substrate, vapor of a solution that contains a raw material of a self-assembled monolayer and a solvent by which the raw material is dissolved, and selectively forming a self-assembled monolayer in the first region. (C) Forming a desired target film in the second region by using the self-assembled monolayer formed in the first region.

In a metal oxide film formation method of the present invention, the following steps are performed. In a solution vessel, a raw-material solution including aluminum as a metallic element is turned into a mist so that a raw-material solution mist is obtained. In a solution vessel provided independently of the solution vessel, a reaction aiding solution including a reaction aiding agent for formation of aluminum oxide is turned into a mist so that an aiding-agent mist is obtained. Then, the raw-material solution mist and the aiding-agent mist are fed to a nozzle provided in a reactor vessel via paths. Thereafter, the raw-material solution mist and the aiding-agent mist are mixed in the nozzle so that a mixed mist is obtained. Then, the mixed mist is fed onto a back surface of a heated P-type silicon substrate.

In a metal oxide film formation method of the present invention, the following steps are performed. In a solution vessel, a raw-material solution including aluminum as a metallic element is turned into a mist so that a raw-material solution mist is obtained. In a solution vessel provided independently of the solution vessel, a reaction aiding solution including a reaction aiding agent for formation of aluminum oxide is turned into a mist so that an aiding-agent mist is obtained. Then, the raw-material solution mist and the aiding-agent mist are fed to a nozzle provided in a reactor vessel via paths. Thereafter, the raw-material solution mist and the aiding-agent mist are mixed in the nozzle so that a mixed mist is obtained. Then, the mixed mist is fed onto a back surface of a heated P-type silicon substrate.

Provided are a metal chalcogenide thin film and a method and device for manufacturing the same. The metal chalcogenide thin film includes a transition metal element and a chalcogen element, and at least one of the transition metal element and the chalcogen element having a composition gradient along the surface of the metal chalcogenide thin film, the composition gradient being an in-plane composition gradient. The metal chalcogenide thin film may be prepared by using a manufacturing method including providing a transition metal precursor and a chalcogen precursor on a substrate by using a confined reaction space in such a manner that at least one of the transition metal precursor and the chalcogen precursor forms a concentration gradient according to a position on the surface of the substrate; and heat-treating the substrate.

Provided are a metal chalcogenide thin film and a method and device for manufacturing the same. The metal chalcogenide thin film includes a transition metal element and a chalcogen element, and at least one of the transition metal element and the chalcogen element having a composition gradient along the surface of the metal chalcogenide thin film, the composition gradient being an in-plane composition gradient. The metal chalcogenide thin film may be prepared by using a manufacturing method including providing a transition metal precursor and a chalcogen precursor on a substrate by using a confined reaction space in such a manner that at least one of the transition metal precursor and the chalcogen precursor forms a concentration gradient according to a position on the surface of the substrate; and heat-treating the substrate.

Systems and methods related to temperature zone control systems can include a reactant source cabinet that is configured to be at least partially evacuated, a vessel base that is configured to hold solid source chemical reactant therein, and a lid that is coupled to a distal portion of the vessel base. The lid may include one or more lid valves. The system may further include a plurality of gas panel valves that are configured to deliver gas from a gas source to the vessel. The system may include a heating element that is configured to heat the one or more lid valves. The system may include a heat shield, a first portion of which is disposed between the one or more lid valves and the vessel base. A second portion of the heat shield may be disposed between the first heating element and the plurality of gas panel valves.