A chemical vapor deposition process for forming a silicon oxide coating includes providing a moving glass substrate. A gaseous mixture is formed and includes a silane compound, a first oxygen-containing molecule, a radical scavenger, and at least one of a phosphorus-containing compound and a boron-containing compound. The gaseous mixture is directed toward and along the glass substrate. The gaseous mixture is reacted over the glass substrate to form a silicon oxide coating on the glass substrate at a deposition rate of 150 nm*m/min or more.

A chemical vapor deposition process for forming a silicon oxide coating includes providing a moving glass substrate. A gaseous mixture is formed and includes a silane compound, a first oxygen-containing molecule, a radical scavenger, and at least one of a phosphorus-containing compound and a boron-containing compound. The gaseous mixture is directed toward and along the glass substrate. The gaseous mixture is reacted over the glass substrate to form a silicon oxide coating on the glass substrate at a deposition rate of 150 nm*m/min or more.

A method of depositing a layer includes measuring a physical property that is related to an air pressure in a reactor chamber of a deposition apparatus. A main gas mixture including a source gas and an auxiliary gas is introduced into the reactor chamber at atmospheric pressure, the source gas including a precursor material and a carrier gas. A gas flow of at least one of the source gas and the auxiliary gas into the reactor chamber is controlled in response to a change of the air pressure in the reactor chamber.

A method of depositing a layer includes measuring a physical property that is related to an air pressure in a reactor chamber of a deposition apparatus. A main gas mixture including a source gas and an auxiliary gas is introduced into the reactor chamber at atmospheric pressure, the source gas including a precursor material and a carrier gas. A gas flow of at least one of the source gas and the auxiliary gas into the reactor chamber is controlled in response to a change of the air pressure in the reactor chamber.

A polymer substrate having deposited on its surface a reaction product of a precursor material obtained or obtainable by a method for preparation of polymer, and to the use of the polymer having improved antibacterial properties and/or antiviral properties or of the polymer having improved antibacterial properties and/or antiviral properties obtained or obtainable by the method for medical applications, antibiofouling applications, hygiene applications, food industry applications, industrial or computer related applications, consumer goods applications and appliances, public and public transport applications, underwater, water sanitation or seawater applications.

A polymer substrate having deposited on its surface a reaction product of a precursor material obtained or obtainable by a method for preparation of polymer, and to the use of the polymer having improved antibacterial properties and/or antiviral properties or of the polymer having improved antibacterial properties and/or antiviral properties obtained or obtainable by the method for medical applications, antibiofouling applications, hygiene applications, food industry applications, industrial or computer related applications, consumer goods applications and appliances, public and public transport applications, underwater, water sanitation or seawater applications.

A deposition method of a metallic carbon film as use as a hard mask during a semiconductor process is provided. In detail, in order to overcome an issue in terms of patterning due to low etch selectivity when a conventional amorphous carbon layer is used as a hard mask and an issue in that the hard mask is not easily removed after etching is performed, a metallic carbon film is formed via a plasma-enhanced chemical vapor deposition (PECVD) method using a precursor containing metal and carbon to remarkably enhance etch selectivity, a grain size is reduced to amorphize the thin film so as to easily remove the hard mask after etching is performed, and relative contents of metal and carbon contained in the metallic carbon film are adjusted to remarkably lower overall internal stress of the metallic carbon film.

A deposition method of a metallic carbon film as use as a hard mask during a semiconductor process is provided. In detail, in order to overcome an issue in terms of patterning due to low etch selectivity when a conventional amorphous carbon layer is used as a hard mask and an issue in that the hard mask is not easily removed after etching is performed, a metallic carbon film is formed via a plasma-enhanced chemical vapor deposition (PECVD) method using a precursor containing metal and carbon to remarkably enhance etch selectivity, a grain size is reduced to amorphize the thin film so as to easily remove the hard mask after etching is performed, and relative contents of metal and carbon contained in the metallic carbon film are adjusted to remarkably lower overall internal stress of the metallic carbon film.

Methods and systems include supplying pulsed microwave radiation through a waveguide, where the microwave radiation propagates in a direction along the waveguide. A pressure within the waveguide is at least 0.1 atmosphere. A supply gas is provided at a first location along a length of the waveguide, a majority of the supply gas flowing in the direction of the microwave radiation propagation. A plasma is generated in the supply gas, and a process gas is added into the waveguide at a second location downstream from the first location. A majority of the process gas flows in the direction of the microwave propagation at a rate greater than 5 slm. An average energy of the plasma is controlled to convert the process gas into separated components, by controlling at least one of a pulsing frequency of the pulsed microwave radiation, and a duty cycle of the pulsed microwave radiation.

A pulsed radio frequency inductive plasma source and method are provided. The source may generate plasma at gas pressures from 1 torr to 2000 torr. By utilizing high power RF generation from fast solid state switches such as Insulated-Gate Bipolar Transistor (IGBT) combined with the resonance circuit, large inductive voltages can be applied to RF antennas to allow rapid gas breakdown from 1-100 μs. After initial breakdown, the same set of switches or an additional rf pulsed power systems are utilized to deliver large amount of rf power, between 10 kW to 10 MW, to the plasmas during the pulse duration of 10 μs-10 ms. In addition, several methods and apparatus for controlling the pulse power delivery, timing gas and materials supply, constructing reactor and substrate structure, and operating pumping system and plasma activated reactive materials delivery system will be disclosed. When combined with the pulsed plasma generation, these apparatuses and the methods can greatly improve the applicability and the efficacy of the industrial plasma processing.