The present disclosure relates to a gas mixing device and a method, and a CVD apparatus including the gas mixing device. The gas mixing device includes: an inlet; a mixing tube in communication with the inlet, an inner wall of the mixing tube being formed with a spiral structure such that gases entering the mixing tube are rotatably travelling along the spiral structure and mixed; and an outlet through which the mixed gases in the mixing tube outflow.

A reactor for continuously coating tow fibers has an outer tubular member, an inner support member spaced from the outer tubular member, a reactant flowing through a space defined by the outer tubular member and the inner support member, and at least one flow promotor located on an outer surface of the inner support member for directing the reactant towards an inner surface of the outer tubular member. A system and a method for coating tow fibers are also described.

A multi-inlet gas distributor for a fluidized bed chemical vapor deposition reactor that may include a distributor body having an inlet surface, an exit surface opposed to the inlet surface, and a side perimeter surface. The distributor body may also include multiple-inlets evenly spaced from each other, wherein the multiple-inlets penetrate the distributor body from the inlet surface to a first depth. The distributor body may additionally include cone-shaped apertures connecting to corresponding ones of the multiple-inlets at the first depth and extend from the first depth toward the exit surface. An apex may be formed on the exit surface at the intersection of the cone-shaped apertures.

Techniques for controlling a solid precursor vapor source are provided. An example method of controlling a solid precursor vapor source includes providing a carrier gas to a sublimation vessel containing a solid precursor material, wherein the carrier gas is heated with a carrier gas temperature control device prior to entering the sublimation vessel, measuring a temperature of a vapor exiting the sublimation vessel, and controlling a temperature of the carrier gas with the carrier gas temperature control device based at least in part on the temperature of the vapor exiting the sublimation vessel.

The present invention relates to a gas lock for separating two gas chambers, which while taking up minimal space makes it possible to achieve the separation of gases without contact with the product/educt/transporting system. The gas lock according to the invention is distinguished by the integration of a measuring chamber for measuring at least one physical and/or chemical property. Also, the present invention relates to a coating device which comprises a gas lock according to the invention. Also provided are possibilities for using the gas lock according to the invention.

A gas supply includes: a flow path in which a gas flows; a plurality of openings respectively provided in a direction intersecting the flow path to supply the gas into a processing chamber, and a flow modifier provided to block a portion of the flow path, and configured to perturb flow of the gas flowing in the flow path toward the plurality of openings.

Embodiments of the present disclosure generally relate to semiconductor processing equipment. In one or more embodiments, a flow adapter for mounting to a processing chamber includes a first flange, a second flange, and a conduit extending at least partially between the first flange and the second flange. The conduit includes an outer face, an inner flow opening, and one or more angled flow openings extending between the outer face and the inner flow opening. The one or more angled flow openings are oriented at an oblique angle relative to the inner flow opening.