There is provided a technique that includes a first nozzle configured to supply a process gas to a process chamber that processes a substrate, a second nozzle arranged to be spaced apart by a predetermined distance from the first nozzle in a circumferential direction of the substrate and configured to supply an inert gas to the process chamber, and a reaction container defining the process chamber therein and including a first protrusion protruding outward to accommodate the first nozzle and a second protrusion protruding outward to accommodate the second nozzle.

The invention concerns a reactor for chemical vapour deposition from first and second precursor gases, the reactor comprising: —a chamber including top and bottom walls and a side wall linking the top and bottom walls, —a support intended for receiving at least one substrate, mounted inside the chamber, and —at least one system for injecting precursor gases, the system comprising an injection head including at least one nozzle for supplying the first precursor gas (41) in a main direction of axis A-A′, the at least one nozzle including: a precursor gas supply conduit (321), and an outlet member (322) generating a substantially annular 43 vortex flow (44) around axis A-A′.

A film deposition device includes a reaction gas supply part which is in communication with a process space defined between a placement part and a ceiling part. An annular gap in a plan view exists between an outer peripheral portion of the placement part and an outer peripheral portion of the ceiling part in circumferential directions of the placement part and the ceiling part. A reaction gas supplied from the reaction gas supply part into the process space via the ceiling part flows outside of the process space via the annular gap. A plurality of gas flow channels, which is used for forming gas-flow walls, is formed in the outer peripheral portion of the ceiling part which provides the annular gap.

The present disclosure provides an apparatus capable of continuously producing carbon nanotubes having high crystallinity, a low residual catalyst content and a high aspect ratio. The apparatus for producing carbon nanotubes includes: a reaction unit configured to synthesize carbon nanotubes (CNTs), a supply unit configured to supply a carbon source to the reaction unit through a supply pipe; and a collection unit configured to collect carbon nanotubes discharged from the reaction unit, wherein the reaction unit may include a chemical vapor deposition reactor.

Techniques for controlling a solid precursor vapor source are provided. An example method of controlling a solid precursor vapor source includes providing a carrier gas to a sublimation vessel containing a solid precursor material, wherein the carrier gas is heated with a carrier gas temperature control device prior to entering the sublimation vessel, measuring a temperature of a vapor exiting the sublimation vessel, and controlling a temperature of the carrier gas with the carrier gas temperature control device based at least in part on the temperature of the vapor exiting the sublimation vessel.

The present disclosure provides an apparatus capable of continuously producing carbon nanotubes having high crystallinity, a low residual catalyst content and a high aspect ratio. The apparatus for producing carbon nanotubes includes: a reaction unit configured to synthesize carbon nanotubes (CNTs), a supply unit configured to supply a carbon source to the reaction unit through a supply pipe; and a collection unit configured to collect carbon nanotubes discharged from the reaction unit, wherein the reaction unit may include a chemical vapor deposition reactor.

A multi-inlet gas distributor for a fluidized bed chemical vapor deposition reactor that may include a distributor body having an inlet surface, an exit surface opposed to the inlet surface, and a side perimeter surface. The distributor body may also include multiple-inlets evenly spaced from each other, wherein the multiple-inlets penetrate the distributor body from the inlet surface to a first depth. The distributor body may additionally include cone-shaped apertures connecting to corresponding ones of the multiple-inlets at the first depth and extend from the first depth toward the exit surface. An apex may be formed on the exit surface at the intersection of the cone-shaped apertures.

A film deposition device includes a reaction gas supply part which is in communication with a process space defined between a placement part and a ceiling part. An annular gap in a plan view exists between an outer peripheral portion of the placement part and an outer peripheral portion of the ceiling part in circumferential directions of the placement part and the ceiling part. A reaction gas supplied from the reaction gas supply part into the process space via the ceiling part flows outside of the process space via the annular gap. A plurality of gas flow channels, which is used for forming gas-flow walls, is formed in the outer peripheral portion of the ceiling part which provides the annular gap.

A reactor for continuously coating tow fibers has an outer tubular member, an inner support member spaced from the outer tubular member, a reactant flowing through a space defined by the outer tubular member and the inner support member, and at least one flow promotor located on an outer surface of the inner support member for directing the reactant towards an inner surface of the outer tubular member. A system and a method for coating tow fibers are also described.

Methods and apparatus for cleaning an atomic layer deposition chamber are provided herein. In some embodiments, a chamber lid assembly includes: a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; a first heating element to heat the central channel; a second heating element to heat the bottom surface of the lid plate; a remote plasma source fluidly coupled to the central channel; and an isolation collar coupled between the remote plasma source and the housing, wherein the isolation collar has an inner channel extending through the isolation collar to fluidly couple the remote plasma source and the central channel.