The present disclosure relates to an apparatus for processing a substrate, and more particularly, to an apparatus for processing a substrate, which deposits a thin-film on a substrate.

The apparatus for processing a substrate in accordance with an exemplary embodiment includes a plurality of source gas supply units configured to respectively supply a plurality of source gases among which at least one contains (3-Dimethylaminopropyl)Dimethylindium (DADI), a gas mixing unit connected to each of the plurality of source gas supply units and having an inner space in which each of the plurality of source gases moves at a passing speed less than a supply speed of each of the plurality of source gases, and a chamber connected with the gas mixing unit and having a reaction space to which the source gases mixed in the inner space are supplied.

An apparatus for use in a chemical vapor infiltration process is disclosed. The apparatus can optionally include any one or combination of a first reaction chamber, a mixing chamber and a second reaction chamber. The mixing chamber can have at least a first inlet, a second inlet and an outlet. The first inlet can be in fluid communication with the first reaction chamber and receive a second precursor gas. The second inlet can be in fluid communication to receive a third precursor gas. The second precursor gas and the third precursor gas can mix within the mixing chamber before passing to the outlet and into the second reaction chamber. The second reaction chamber can contain a substrate that can receive a film deposition from reaction of the second precursor gas and the third precursor gas within the second reaction chamber.

Disclosed is a coated composite comprising a seal coat disposed on a composite material wherein the seal coat comprises protective particles and a matrix.

Provided are gas distribution apparatus with a showerhead having a front plate and a back plate spaced to form a gas volume, the front plate having an inner surface adjacent the gas volume and an outer surface with a plurality of apertures extending therethrough, the gas volume having a center region and an outer region; a first inlet in fluid communication with the center region of the gas volume, the inlet having an inside and an outside; and a mixer disposed on the inside of the inlet to increase gas flow temperature. Also provided are processing chamber apparatus and methods of depositing a film.

Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface. The first plate of the gasbox may define a central aperture that extends from the first surface to the second surface. The first plate may define an annular recess in the second surface. The first plate may define a plurality of apertures extending from the first surface to the annular recess in the second surface. The gasbox may include a second plate characterized by an annular shape. The second plate may be coupled with the first plate at the annular recess to define a first plenum within the first plate.

A chemical vapor deposition furnace for depositing silicon nitride films, is discloses. The furnace comprising a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector is provided inside the process chamber extending in a substantially vertical direction over substantially a wafer boat height and comprising a feed end connected to a source of a silicon precursor and a source of a nitrogen precursor and a plurality of vertically spaced gas injection holes to provide gas from the feed end to the process chamber. The furnace may comprise a purge gas injection system to provide a purge gas into the process chamber near a lower end of the process chamber.

A coated cutting tool includes a substrate and a hard film on coated on the substrate. The hard film contains a complex nitride of Al and Cr. The hard film includes aggregates of columnar grains grown on the substrate along the thickness of the film. The nitride has an Al content of 60 atom % or more, a Cr content of 10 atom % or more, and a total content of Al and Cr of 90 atom % or more relative to the total amount of metal and metalloid elements. The complex nitride has the highest peak intensity assigned to crystal plane (311) of an fcc structure in X-ray diffractometry. In the hard film, the ratio of an X-ray diffraction intensity of plane (311) to the intensities of the other planes is 1.30 or more. A method and a system are also provided for manufacturing the coated cutting tool by chemical vapor deposition.

A chemical vapor deposition process for depositing a coating comprising silicon oxide and titanium oxide is provided. A coating formed by the chemical vapor deposition process is also provided.

An apparatus for manufacturing a display apparatus includes a deposition source, a nozzle head, a substrate fixer, and a deposition preventer. The deposition source is outside the chamber and vaporizes or sublimates a deposition material. The nozzle head is in the chamber, is connected to the at least one deposition source, and simultaneously sprays the deposition material onto an entire surface of a display substrate. The substrate fixer is connected to the chamber and moves linearly, with the display apparatus is mounted on the substrate fixer. The deposition preventer is in the chamber surrounding an edge portion of the nozzle head and an edge portion of the substrate fixer. The deposition preventer is heated during a deposition process.

Apparatus for mixing two or more gases prior to entering a reaction chamber, reactor systems including the apparatus, and methods of using the apparatus and systems are disclosed. The systems and methods as described herein can be used to, for example, pulse a mixture of two or more precursors to a reaction chamber.