A processing apparatus includes a wafer cassette table, a wafer carrying-out mechanism, a wafer table, a frame housing unit, a frame carrying-out mechanism, a frame table, a tape sticking unit, a tape-attached frame conveying mechanism, a tape pressure bonding unit, a frame unit carrying-out mechanism, a reinforcing part removing unit, a ring-free unit carrying-out mechanism, and a frame cassette table. The wafer carrying-out mechanism includes a Bernoulli chuck mechanism that jets gas to the back surface of the wafer and generates a negative pressure. The gas jetted by the Bernoulli chuck mechanism is inert gas. The wafer carrying-out mechanism jets the inert gas from the Bernoulli chuck mechanism to suppress oxidation of the back surface of the wafer when the wafer is carried out.

The present disclosure concerns an atomic layer deposition device for area-selective deposition of a target material layer onto a deposition area of a substrate surface further comprising a non-deposition area. In use the substrate is conveyed along a plurality of deposition and separator spaces including at least two gas separator spaces provided with at least a separator gas inlet and a separator drain for, in use exposing the substrate to a separator gas flow. Wherein at least one of the gas separator spaces forms a combined separator-inhibitor gas flow comprising a separator gas and inhibitor moieties. The inhibitor moieties selectively adhering to the non-deposition area to form an inhibition layer reducing adsorption of precursor moieties. In a preferred embodiment the device includes a back-etching space to increase selectivity of the deposition process.

An installation having a housing, a substrate support (20) received in the housing, diffuser (42) for diffusing an inert gas towards the substrate support, and at least one head (30) defining an inner volume (V) opened opposite to the top, the head being provided with at least two electrodes (8, 8′, 8″) for creating an electric discharge and with an injector (7, 7′, 7″) for injecting a gaseous mixture towards the substrate. The injector has at least one injection tube (7, 7′, 7″) placed between two adjacent electrodes or between one electrode and a peripheral wall, the tube being provided with injection holes facing the substrate support, for injecting the gaseous mixture on the substrate, whereas diffuser is provided inside the head, the injection tube being placed between the substrate support and the diffuser so that, in use, the gaseous mixture is urged against the substrate by the inert gas.

Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

Described herein is a technique capable of suppressing generation of particles by removing by-products in a groove of a high aspect ratio. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; and a substrate support provided in the process chamber and including a plurality of supports where the substrate is placed, wherein the process chamber includes a process region where a process gas is supplied to the substrate and a purge region where the process gas above the substrate is purged, and the purge region includes a first pressure purge region to be purged at a first pressure and a second pressure purge region to be purged at a second pressure higher than the first pressure.

A substrate processing apparatus, includes a reaction chamber, a central processing volume within a vertically oriented central processing portion of the reaction chamber, to expose at least one substrate to self-limiting surface reactions in the central processing volume, at least two lateral extensions in the reaction chamber laterally extending from the central processing portion, and an actuator configured to reversibly move at least one substrate between the lateral extension(s) and the central processing volume.

There is provided a technique that includes: a first nozzle arranged to correspond to a first region where a plurality of product substrates are arranged in a substrate arrangement region where a plurality of substrates are arranged in a reaction tube, the first nozzle supplying a hydrogen-containing gas into the reaction tube; a second nozzle arranged to correspond to the first region and supplying an oxygen-containing gas into the reaction tube; a third nozzle arranged closer to the bottom opening than the first region to correspond to a second region where a dummy substrate or a heat insulator or both is arranged, the third nozzle supplying a dilution gas into the reaction tube; and a controller configured to be capable of controlling the hydrogen-containing gas and the dilution gas so that a concentration of the hydrogen-containing gas in the second region is lower than that in the first region.

The present disclosure relates to systems and methods for reducing the formation of hardware residue and minimizing secondary plasma formation during substrate processing in a process chamber. The process chamber may include a gas distribution member configured to flow a first gas into a process volume and generate a plasma therefrom. A second gas is supplied into a lower region of the process volume. Further, an exhaust port is disposed in the lower region to remove excess gases or by-products from the process volume during or after processing.

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.

The invention relates to a nozzle and nozzle head arranged to supply gas towards a surface of a substrate The nozzle comprises a nozzle output surface via which the gas is supplied towards the surface of the substrate, a nozzle top surface opposite the nozzle output surface, and a nozzle side wall extending between the nozzle output surface and the nozzle top surface. The nozzle further comprises at least one recess provided to the nozzle side wall, the at least one recess extending between the nozzle top surface and the nozzle output surface for providing a gas passage from the nozzle top surface to the nozzle output surface when the nozzle side wall is against a counter surface.