Embodiments of the present disclosure provide a reaction gas supply system and a control method. The reaction gas supply system includes a plurality of precursor containers and a plurality of supply regulator devices. The precursor container is connected to at least one of the reaction chambers. The plurality of precursor containers include at least a pair of precursor containers of an arbitrary combination. A supply regulator device is arranged between each pair of precursor containers. The supply regulator device is configured to connect the corresponding pair of precursor containers. With the reaction gas supply system and the control method of the present disclosure, the reaction gas may be ensured to be supplied stably, the utilization rate of the precursor may be increased, and the production efficiency and the product quality may be increased.

Systems and methods related to temperature zone control systems can include a reactant source cabinet that is configured to be at least partially evacuated, a vessel base that is configured to hold solid source chemical reactant therein, and a lid that is coupled to a distal portion of the vessel base. The lid may include one or more lid valves. The system may further include a plurality of gas panel valves that are configured to deliver gas from a gas source to the vessel. The system may include a heating element that is configured to heat the one or more lid valves. The system may include a heat shield, a first portion of which is disposed between the one or more lid valves and the vessel base. A second portion of the heat shield may be disposed between the first heating element and the plurality of gas panel valves.

Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

A two-dimensional layer is deposited onto a substrate in a CVD reactor, in which a process gas is fed into a process chamber. The process gas in the process chamber is brought to the substrate, and the substrate is heated to a process temperature. After a chemical reaction of the process gas, the layer forms on the surface. During or after the heating of the substrate to the process temperature, the process gas with a first mass flow rate is initially fed into the process chamber and then, while the substrate surface is being observed, the mass flow rate of the process gas is increased to a rate at which the layer growth begins, and subsequently the mass flow rate of the process gas is increased by a predetermined value, during which the layer is deposited. The beginning of the layer growth is identified by observing measurements from a pyrometer.

The present disclosure relates to an apparatus for processing a substrate, and more particularly, to an apparatus for processing a substrate, which deposits a thin-film on a substrate.

The apparatus for processing a substrate in accordance with an exemplary embodiment includes a plurality of source gas supply units configured to respectively supply a plurality of source gases among which at least one contains (3-Dimethylaminopropyl)Dimethylindium (DADI), a gas mixing unit connected to each of the plurality of source gas supply units and having an inner space in which each of the plurality of source gases moves at a passing speed less than a supply speed of each of the plurality of source gases, and a chamber connected with the gas mixing unit and having a reaction space to which the source gases mixed in the inner space are supplied.

Gas boxes for providing semiconductor processing gases are provided that incorporate a cross-flow ventilation system that may effectively remove potentially leaking gases from within the gas box at significantly lower volumetric flow rates than are possible with conventional gas box ventilation systems.

An apparatus for use in a chemical vapor infiltration process is disclosed. The apparatus can optionally include any one or combination of a first reaction chamber, a mixing chamber and a second reaction chamber. The mixing chamber can have at least a first inlet, a second inlet and an outlet. The first inlet can be in fluid communication with the first reaction chamber and receive a second precursor gas. The second inlet can be in fluid communication to receive a third precursor gas. The second precursor gas and the third precursor gas can mix within the mixing chamber before passing to the outlet and into the second reaction chamber. The second reaction chamber can contain a substrate that can receive a film deposition from reaction of the second precursor gas and the third precursor gas within the second reaction chamber.

A heating device includes a heating assembly. The heating assembly includes a ventilation structure configured to blow gas to an edge of a to-be-processed workpiece carried by the heating device. The heating device further includes a base arranged on a side of the heating assembly away from a heating surface of the heating assembly. A mounting space is formed between the base and the heating assembly. The heating device also includes a cooling mechanism arranged in the mounting space, located at a position corresponding to an edge area of the heating surface, and configured to cool the heating assembly.

A precursor delivery system is described herein. Some embodiments provide a precursor delivery system capable of providing a uniform gas flow comprising precursor into a processing chamber for atomic layer deposition processes. Some embodiments of the precursor delivery system comprise a reservoir with an inlet line, an outlet line and an outlet valve. Further embodiments comprise a precursor source, an inlet valve, a heater, a processing chamber and a controller. Additional embodiments relate to methods for using a precursor delivery system.

An apparatus for atomic scale processing is provided. The apparatus may include a reactor and an inductively coupled plasma source. The reactor may have inner and outer surfaces such that a portion of the inner surfaces define an internal volume of the reactor. The internal volume of the reactor may contain a fixture assembly to support a substrate wherein the partial pressure of each background impurity within the internal volume may be below 10.sup.−6 Torr to reduce the role of said impurities in surface reactions during atomic scale processing.