The present application discloses a vapor deposition apparatus, including: a reaction chamber, a gas spraying device, and a cleaning gas channel, wherein the gas spraying device includes a reaction gas channel, and the reaction gas channel includes an outlet communicating with the reaction chamber; and the cleaning gas channel is spaced apart from the reaction gas channel, such that the probability of generating the residual produce in the reaction chamber can be reduced, and the uniformity of film formation and the utilization rate of the machine are improved.

A film forming apparatus including a bell-shaped chamber having an internal space and an exhaust port; a wafer boat in the bell-shaped chamber, and in which wafers are sequentially stackable from a lower end portion to an upper end portion; a gas supply pipe passing through the bell-shaped chamber to supply gas to the bell-shaped chamber; and an injector connected to the gas supply pipe to inject gas onto the wafers, wherein the injector includes a gas flow path through which the gas supplied from the gas supply pipe flows and nozzles connected to the gas flow path, stepped surfaces are on an inner surface of the injector such that a diameter of the gas flow paths in at least two different locations within the injector are different, and lengths of the nozzles are different from each other, and correspond with the diameter of the gas flow path.

The disclosure relates to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one substrate; a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated; a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated; a removal flow path to allow removal of gas from the reaction chamber; a removal flow controller to create a gas flow in the reaction chamber to the removal flow path when the removal flow controller is activated; and, a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.

A gas processing apparatus includes: a mounting part; a gas supply part located above the mounting part and having a plurality of first gas supply holes; a gas supply path forming part configured to form a supply path of a processing gas, the gas supply path forming part including a flat opposing surface which faces the gas supply part from above and defines a first diffusion space for diffusing the processing gas in a lateral direction; a recess surrounding a central portion of the opposing surface; and a plurality of gas dispersion portions located in the recess surrounding the central portion of the opposing surface without protruding from the opposing surface, each of the plurality of gas dispersion portions having a plurality of gas discharge holes extending along a circumferential direction so as to laterally disperse the processing gas supplied from the supply path in the first diffusion space.

A heat treatment apparatus includes: a processing container configured to accommodate and process a plurality of substrates in multiple tiers under a reduced-pressure environment; a first heater configured to heat the plurality of substrates accommodated in the processing container; a plurality of gas supply pipes configured to supply a gas to positions having different heights in the processing container; and a second heater provided on a gas supply pipe that supplies a gas to a lowermost position among the plurality of gas supply pipes, and configured to heat the gas in the gas supply pipe.

Provided in the present disclosure are a coating apparatus and an application thereof, being used for coating on the surface of a substrate, the coating apparatus comprises a feeding device and a device main body, wherein the feeding device is configured to communicate with the apparatus device main body, the feeding device comprises a gas feeding device and a liquid feeding device, the gas feeding device is in communication with the device main body and is used for transmitting a gaseous gas raw material to the device main body, the liquid feeding device is in communication with the device main body and is used for transmitting a liquid gasified gas raw material to the device main body, the device main body is used for preparing a thin film based on the gas raw material, and the same coating apparatus can be used for preparing various thin films or film layers with different properties or of different types on the surface of the substrate.

A semiconductor fabrication apparatus comprises a process chamber, an ozone supply that provides the process chamber with ozone, an oxygen supply that provides the ozone supply with a source gas of the ozone, and a plurality of impurity detectors disposed between the oxygen supply and the ozone supply. The impurity detectors detect an inactive gas in the source gas.

A liquid chemical supply device, system and method capable of processing a gas having first and second canisters connected, respectively, to semiconductor manufacturing apparatus by way of first and second supply lines, to provide liquid chemicals stored therein to the semiconductor manufacturing apparatus; first and second push lines connected to the first and second canisters, respectively, and configured to provide a push gas to the first and second canisters to discharge the chemicals into the first and second supply lines, and a gas processing unit in fluid communication with the first supply line and the second push line, in order for the chemical in the first supply line containing a gas therein to be provided to and stored in the second canister through the second push line.

A semiconductor processing system for delivering large capacity vaporized precursor from solid or liquid precursor source is disclosed. The system utilizes a carrier gas to feed the vaporized precursor to a remotely located process zone where multiple process modules are disposed. The system comprises a first and second buffer volumes configured to reduce pressure drop and increase delivery rates. A method for delivering a large capacity vaporized precursor to the remotely located process zone are also disclosed.

A solid electrolyte includes an oxynitride that contains an alkaline-earth metal, phosphorus, oxygen, and nitrogen. A P2p spectrum obtained by an X-ray photoelectron spectroscopy measurement of the oxynitride contains a peak component originating from a P—N bond.